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1N5710B

Description
Variable Capacitance Diode, 100pF C(T), 65V, Silicon, Abrupt, DO-7
CategoryDiscrete semiconductor    diode   
File Size31KB,1 Pages
ManufacturerCobham Semiconductor Solutions
Download Datasheet Parametric Compare View All

1N5710B Overview

Variable Capacitance Diode, 100pF C(T), 65V, Silicon, Abrupt, DO-7

1N5710B Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
package instructionO-LALF-W2
Reach Compliance Codeunknow
ECCN codeEAR99
Minimum breakdown voltage65 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode Capacitance Tolerance5%
Minimum diode capacitance ratio3.2
Nominal diode capacitance100 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JEDEC-95 codeDO-7
JESD-30 codeO-LALF-W2
JESD-609 codee0
Number of components1
Number of terminals2
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.4 W
Certification statusNot Qualified
minimum quality factor150
surface mountNO
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Varactor Diode ClassificationABRUPT
Base Number Matches1

1N5710B Related Products

1N5710B 1N5710A 1N5710
Description Variable Capacitance Diode, 100pF C(T), 65V, Silicon, Abrupt, DO-7 Variable Capacitance Diode, 100pF C(T), 65V, Silicon, Abrupt, DO-7 Variable Capacitance Diode, 100pF C(T), 65V, Silicon, Abrupt, DO-7
Is it lead-free? Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible incompatible incompatible
package instruction O-LALF-W2 O-LALF-W2 O-LALF-W2
Reach Compliance Code unknow unknow unknow
ECCN code EAR99 EAR99 EAR99
Minimum breakdown voltage 65 V 65 V 65 V
Shell connection ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE
Diode Capacitance Tolerance 5% 10% 20%
Minimum diode capacitance ratio 3.2 3.2 3.2
Nominal diode capacitance 100 pF 100 pF 100 pF
Diode component materials SILICON SILICON SILICON
Diode type VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE
JEDEC-95 code DO-7 DO-7 DO-7
JESD-30 code O-LALF-W2 O-LALF-W2 O-LALF-W2
JESD-609 code e0 e0 e0
Number of components 1 1 1
Number of terminals 2 2 2
Package body material GLASS GLASS GLASS
Package shape ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maximum power dissipation 0.4 W 0.4 W 0.4 W
Certification status Not Qualified Not Qualified Not Qualified
minimum quality factor 150 150 150
surface mount NO NO NO
Terminal surface TIN LEAD TIN LEAD TIN LEAD
Terminal form WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Varactor Diode Classification ABRUPT ABRUPT ABRUPT
Base Number Matches 1 1 1
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