FRE9260D datasheet, PDF - EEWORLD Datasheet

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FRE9260D: Description19 A, 200 V, 0.21 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-258AA; Categorysemiconductor Discrete semiconductor; File Size49KB，6 Pages; ManufacturerIntersil ( Renesas ); Websitehttp://www.intersil.com/cda/home/

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FRE9260D Overview

19 A, 200 V, 0.21 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-258AA

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FRE9260D, FRE9260R,

FRE9260H

June 1998

19A, -200V, 0.210 Ohm, Rad Hard,

P-Channel Power MOSFETs

Package

TO-258AA

Features

• 19A, -200V, RDS(on) = 0.210Ω

• Second Generation Rad Hard MOSFET Results From New Design Concepts

• Gamma

Meets Pre-Rad Speciﬁcations to 100KRAD(SI)

Deﬁned End Point Specs at 300KRAD(Si) and 1000KRAD(Si)

Performance Permits Limited Use to 3000KRAD(Si)

Survives 3E9RAD(Si)/sec at 80% BVDSS Typically

Survives 2E12 Typically If Current Limited to IDM

18.0nA Per-RAD(Si)/sec Typically

Pre-RAD Speciﬁcations for 1E13 Neutrons/cm

Usable to 1E14 Neutrons/cm

• Gamma Dot

• Photo Current

• Neutron

Description

The Intersil Corporation Sector has designed a series of SECOND GENERATION

hardened power MOSFETs of both N and P channel enhancement types with rat-

ings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose

hardness is offered at 100KRAD(Si) and 1000KRAD(Si) with neutron hardness

ranging from 1E13n/cm

for 500V product to 1E14n/cm

for 100V product. Dose

rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and

2E12 with current limiting.

This MOSFET is an enhancement-mode silicon-gate power ﬁeld effect transistor of

the vertical DMOS (VDMOS) structure. It is specially designed and processed to

exhibit minimal characteristic changes to total dose (GAMMA) and neutron (n

)

exposures. Design and processing efforts are also directed to enhance survival to

heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.

This part may be supplied as a die or in various packages other than shown

above. Reliability screening is available as either non TX (commercial), TX equiv-

alent of MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of

MIL-S-19500. Contact the Intersil Corporation High-Reliability Marketing group

for any desired deviations from the data sheet.

Symbol

Absolute Maximum Ratings

(TC = +25

C) Unless Otherwise Speciﬁed

FRE9260D, R, H

-200

±20

150

1.20

-55 to +150

300

UNITS

Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS

Drain-Gate Voltage (RGS = 20kΩ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

Continuous Drain Current

TC = +25

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID

TC = +100

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS

Maximum Power Dissipation

TC = +25

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT

TC = +100

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT

Derated Above +25

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Inductive Current, Clamped, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . ILM

Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS

Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM

Operating And Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG

Lead Temperature (During Soldering)

Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

File Number

3269.2

FRE9260D Related Products

	FRE9260D	FRE9260R	FRE9260H
Description	19 A, 200 V, 0.21 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-258AA	0.21 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-258AA	19 A, 200 V, 0.21 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-258AA

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