datasheet
EEWORLDEEWORLDEEWORLD
Datasheet
Part Number

Keyword

Search
Keyword

Part Number

Search
Datasheet> All Categories > semiconductor> Discrete semiconductor> FRF250R
PDF
Preview

FRF250R

Description
23 A, 200 V, 0.115 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
Categorysemiconductor    Discrete semiconductor   
File Size51KB，6 Pages
ManufacturerIntersil ( Renesas )
Websitehttp://www.intersil.com/cda/home/
Download Datasheet Compare View All

FRF250R Overview

23 A, 200 V, 0.115 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA

Preview

Download Datasheet
FRF250D, FRF250R,
FRF250H
June 1998
23A, 200V, 0.115 Ohm, Rad Hard,
N-Channel Power MOSFETs
Package
TO-254AA
Features
• 23A, 200V, RDS(on) = 0.115Ω
• Second Generation Rad Hard MOSFET Results From New Design Concepts
• Gamma
-
-
-
-
-
-
-
-
Meets Pre-Rad Specifications to 100KRAD(Si)
Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)
Performance Permits Limited Use to 3000KRAD(Si)
Survives 3E9RAD(Si)/sec at 80% BVDSS Typically
Survives 2E12 Typically If Current Limited to IDM
12.0nA Per-RAD(Si)/sec Typically
Pre-RAD Specifications for 1E13 Neutrons/cm
2
Usable to 1E14 Neutrons/cm
2
• Gamma Dot
• Photo Current
• Neutron
Description
The Intersil Corporation has designed a series of SECOND GENERATION hard-
ened power MOSFETs of both N and P channel enhancement types with ratings
from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose
hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness
ranging from 1E13n/cm
2
for 500V product to 1E14n/cm
2
for 100V product. Dose
rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and
2E12 with current limiting.
This MOSFET is an enhancement-mode silicon-gate power field effect transistor of
the vertical DMOS (VDMOS) structure. It is specially designed and processed to
exhibit minimal characteristic changes to total dose (GAMMA) and neutron (n
o
)
exposures. Design and processing efforts are also directed to enhance survival to
heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.
This part may be supplied as a die or in various packages other than shown above.
Reliability screening is available as either non TX (commercial), TX equivalent of
MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of
MIL-S-19500. Contact the Intersil High-Reliability Marketing group for any desired
deviations from the data sheet.
CAUTION: Beryllia Warning per MIL-S-19500
refer to package specifications.
Symbol
Absolute Maximum Ratings
(TC = +25
o
C) Unless Otherwise Specified
FRF250D, R, H
200
200
23
15
69
±20
125
50
1.00
69
23
69
-55 to +150
300
UNITS
V
V
A
A
A
V
W
W
W/
o
C
A
A
A
o
C
o
C
Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS
Drain-Gate Voltage (RGS = 20kΩ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current
TC = +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
TC = +100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation
TC = +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
TC = +100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT
Derated Above +25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Inductive Current, Clamped, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . ILM
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS
Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM
Operating And Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG
Lead Temperature (During Soldering)
Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
©
Intersil Corporation 1999
File Number
3227.1
4-1

FRF250R Related Products

FRF250R FRF250D FRF250H
Description 23 A, 200 V, 0.115 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA 0.115 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA 23 A, 200 V, 0.115 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA

Recommended Resources

Dual tone electronic doorbell circuit

Practical soft start circuit diagram in switching power supply a

Differential current-voltage conversion circuit

Triac AC voltage regulator

Control circuit for rice cooker

Beam receiving circuit

Is FPGA acceleration of CNN an option? What board should I use?
My undergraduate major was mechanics, but I studied electronics as a graduate student. I am not very good at it. Now I have to choose the direction and topic of my graduation project. I am confused ab...
慢吞吞的小蜗牛 FPGA/CPLD
Then the question comes again! Xiaomi router problem ask
Disclaimer: I am a pure technical loser, not a Xiaomi fan, not a Xiaomi hater. I post for the purpose of seeking knowledge, discussion, and research. I want to obtain relevant professional or non-prof...
lidonglei1 RF/Wirelessly
51 MCU problem help
The 51 single-chip microcomputer sends data every 50ms. How to write the C51 program?...
XJ1423 51mcu
Circuit Diagram 20-Analysis of the Principle of Electronic Filter Circuit
[i=s]This post was last edited by tiankai001 on 2018-2-11 14:04[/i] [align=left][color=rgb(34, 34, 34)][font="]In order for the transistor to work properly, a DC circuit must be established for it. Tr...
tiankai001 Integrated technical exchanges
【Design Tools】 Xilinx's development tool EDK
EDK=Embedded Development Kit. EDK is a tool used by Xilinx to develop embedded systems. Compared with Xilinx's ISE, the difference between the two is that if you only use Xilinx 's FPGA for logic desi...
鑫海宝贝 FPGA/CPLD
【R7F0C80212】First experience lighting up the breathing light
[i=s]This post was last edited by youyou_123 on 2014-8-19 00:12[/i] The board arrived a long time ago but has been lying on the table during my business trip, so I won't say anything. Let's take a loo...
youyou_123 Renesas Electronics MCUs
Shortcut:   A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

Popular Components

  1. BD15IC0WEFJ
  2. RG2012P-474-B-T5
  3. E2E2-X10Y2
  4. PCF2010H11-280KBT1
  5. LR05103327684F
  6. CRCW12104121FRT2
  7. TFCJV4ST235AW
  8. RKC8CLSTB1103F
  9. 1SMB3EZ75-AU
  10. P4SMAJ33CA-AU_R1_000A1
  11. 1N5257A-35T/R
  12. A2549WVK-2x18P-BK-G30

Popular Articles

  1. 51 single chip microcomputer-simple application of timer
  2. Uboot replaces eboot to burn and start wince
  3. Mixing has advantages. NIO launches ternary iron-lithium standard endurance battery pack
  4. Blaize and LeiShen Intelligent Technology have reached a strategic cooperation agreement to integrate LiDAR and AI functions
  5. Apple recruits RISC-V engineers to get rid of its dependence on ARM
  6. When it comes to smart cockpits, how many screens have you piled up?
  7. Xiaomi Mi 12 Ultra imaging upgrade: to dominate DXO ranking
  8. 51 single chip microcomputer C51 program
  9. Data logger selection and working principle
  10. Infineon launches highly integrated iMOTION™ IMI110 series of modules for low-power devices

Technical ResourceMore

  1. \"Circuit Fundamentals\" edited by Wang Huiling
  2. NE555 circuit intelligent design software
  3. Application design of buttons and menus in embedded systems
  4. CCD camera technical parameters
  5. Wireless and RF Solutions
  6. Research on signal filtering and denoising based on wavelet transform
  7. Controlling AC Signal Offset and Amplitude Using a Dual-Channel Multiplying DAC and a Single IV Converter
  8. Chapter 5_VHDL_State Machine
  9. SDH daily maintenance
  10. MAX98095 Data Sheet

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

About Us Customer Service Contact Information Datasheet Sitemap LatestNews
Index Files: 2157  815  560  774  1092  44  17  12  16  22 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号