FRK9150D datasheet, PDF - EEWORLD Datasheet

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FRK9150D: Description26 A, 100 V, 0.125 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AE; Categorysemiconductor Discrete semiconductor; File Size50KB，6 Pages; ManufacturerIntersil ( Renesas ); Websitehttp://www.intersil.com/cda/home/

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FRK9150D Overview

26 A, 100 V, 0.125 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AE

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FRK9150D, FRK9150R,

FRK9150H

June 1998

26A, -100V, 0.125 Ohm, Rad Hard,

P-Channel Power MOSFETs

Package

TO-204AE

Features

• 26A, -100V, RDS(on) = 0.125Ω

• Second Generation Rad Hard MOSFET Results From New Design Concepts

• Gamma

Meets Pre-Rad Speciﬁcations to 100KRAD(Si)

Deﬁned End Point Specs at 300KRAD(Si) and 1000KRAD(Si)

Performance Permits Limited Use to 3000KRAD(Si)

Survives 3E9RAD(Si)/sec at 80% BVDSS Typically

Survives 2E12 Typically If Current Limited to IDM

7.0nA Per-RAD(Si)/sec Typically

Pre-RAD Speciﬁcations for 3E13 Neutrons/cm

Usable to 3E14 Neutrons/cm

• Gamma Dot

• Photo Current

• Neutron

Description

Intersil has designed a series of SECOND GENERATION hardened power MOS-

FETs of both N and P channel enhancement types with ratings from 100V to 500V,

1A to 60A, and on resistance as low as 25MΩ. Total dose hardness is offered at

100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging from

1E13n/cm2 for 500V product to 1E14n/cm2 for 100V product. Dose rate hardness

(GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with cur-

rent limiting.

This MOSFET is an enhancement-mode silicon-gate power ﬁeld effect transistor of

the vertical DMOS (VDMOS) structure. It is specially designed and processed to

exhibit minimal characteristic changes to total dose (GAMMA) and neutron (n

)

exposures. Design and processing efforts are also directed to enhance survival to

heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure.

This part may be supplied as a die or in various packages other than shown above.

Reliability screening is available as either non TX (commercial), TX equivalent of

MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of

MIL-S-19500. Contact Intersil Corporation’s High-Reliability Marketing group for

any desired deviations from the data sheet.

Symbol

Absolute Maximum Ratings

(TC = +25

C) Unless Otherwise Speciﬁed

FRK9150D, R, H

-100

±20

150

1.2

-55 to +150

300

UNITS

Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS

Drain-Gate Voltage (RGS = 20kΩ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

Continuous Drain Current

TC = +25

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID

TC = +100

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS

Maximum Power Dissipation

TC = +25

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT

TC = +100

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT

Derated Above +25

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Inductive Current, Clamped, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . ILM

Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS

Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM

Operating And Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG

Lead Temperature (During Soldering)

Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

http://www.intersil.com or 407-727-9207

Intersil Corporation 1999

File Number

3266.2

4-1

FRK9150D Related Products

	FRK9150D	FRK9150H	FRK9150R
Description	26 A, 100 V, 0.125 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AE	26A, 100V, 0.125ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AE	0.125 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AE

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