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FS20UM-6

Description
HIGH-SPEED SWITCHING USE
CategoryDiscrete semiconductor    The transistor   
File Size50KB,4 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
Download Datasheet Parametric Compare View All

FS20UM-6 Overview

HIGH-SPEED SWITCHING USE

FS20UM-6 Parametric

Parameter NameAttribute value
MakerMitsubishi
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage300 V
Maximum drain current (Abs) (ID)20 A
Maximum drain current (ID)20 A
Maximum drain-source on-resistance0.26 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)150 W
Maximum pulsed drain current (IDM)60 A
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
MITSUBISHI Nch POWER MOSFET
FS16UM-9
HIGH-SPEED SWITCHING USE
FS16UM-9
OUTLINE DRAWING
10.5MAX.
r
3.2
7.0
Dimensions in mm
4.5
1.3
16
φ
3.6
3.8MAX.
1.0
12.5MIN.
0.8
2.54
2.54
4.5MAX.
0.5
2.6
q w e
wr
q
GATE
w
DRAIN
e
SOURCE
r
DRAIN
e
q
¡V
DSS ................................................................................
450V
¡r
DS (ON) (MAX) ..............................................................
0.45Ω
¡I
D .........................................................................................
16A
TO-220
APPLICATION
SMPS, DC-DC Converter, battery charger, power
supply of printer, copier, HDD, FDD, TV, VCR, per-
sonal computer etc.
MAXIMUM RATINGS
Symbol
V
DSS
V
GSS
I
D
I
DM
P
D
T
ch
T
stg
(Tc = 25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
V
GS
= 0V
V
DS
= 0V
Conditions
Ratings
450
±30
16
48
150
–55 ~ +150
–55 ~ +150
2.0
Unit
V
V
A
A
W
°C
°C
g
Feb.1999
Typical value

FS20UM-6 Related Products

FS20UM-6 FS16UM-9 FS3UM-9
Description HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE
Maker Mitsubishi Mitsubishi Mitsubishi
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown unknow unknown
Shell connection DRAIN DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 300 V 450 V 450 V
Maximum drain current (Abs) (ID) 20 A 16 A 3 A
Maximum drain current (ID) 20 A 16 A 3 A
Maximum drain-source on-resistance 0.26 Ω 0.45 Ω 3.5 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components 1 1 1
Number of terminals 3 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 150 W 150 W 60 W
Maximum pulsed drain current (IDM) 60 A 48 A 9 A
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
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