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FS5VS-18A

Description
Nch POWER MOSFET HIGH-SPEED SWITCHING USE
CategoryDiscrete semiconductor    The transistor   
File Size47KB,4 Pages
ManufacturerPOWEREX
Websitehttp://www.pwrx.com/Home.aspx
Download Datasheet Parametric Compare View All

FS5VS-18A Overview

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

FS5VS-18A Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerPOWEREX
Parts packaging codeTO-220S
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Codeunknown
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage900 V
Maximum drain current (Abs) (ID)5 A
Maximum drain current (ID)5 A
Maximum drain-source on-resistance2.8 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
JESD-609 codee0
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum power consumption environment125 W
Maximum power dissipation(Abs)125 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
MITSUBISHI Nch POWER MOSFET
FS5VS-18A
HIGH-SPEED SWITCHING USE
FS5VS-18A
OUTLINE DRAWING
r
Dimensions in mm
4.5
1.3
1.5MAX.
8.6 ± 0.3
9.8 ± 0.5
3.0
+0.3
–0.5
1.5MAX.
10.5MAX.
0
+0.3
–0
1
5
0.8
0.5
q w e
wr
2.6 ± 0.4
q
¡V
DSS ................................................................................
900V
¡r
DS (ON) (MAX) ................................................................
2.8Ω
¡I
D ............................................................................................
5A
q
GATE
w
DRAIN
e
SOURCE
r
DRAIN
e
TO-220S
APPLICATION
SMPS, DC-DC Converter, battery charger, power
supply of printer, copier, HDD, FDD, TV, VCR, per-
sonal computer etc.
MAXIMUM RATINGS
Symbol
V
DSS
V
GSS
I
D
I
DM
P
D
T
ch
T
stg
(Tc = 25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
V
GS
= 0V
V
DS
= 0V
Conditions
Ratings
900
±30
5
15
125
–55 ~ +150
–55 ~ +150
1.2
4.5
Unit
V
V
A
A
W
°C
°C
g
Feb.1999
Typical value
(1.5)

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