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FS6S1565RB
Fairchild Power Switch(FPS)
Features
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Wide operating frequency range up to 150Khz
Internal Burst mode Controller for Stand-by mode
Pulse by pulse over current limiting
Over current protection(Auto restart mode)
Over voltage protection (Auto restart mode)
Over load protection(Auto restart mode)
Internal thermal shutdown function(Auto restart mode)
Under voltage lockout
Internal high voltage sense FET
Eternal sync terminal/Soft start
Description
The Fairchild Power Switch(FPS) product family is specially
designed for an off-line SMPS with minimal external
components. The Fairchild Power Switch(FPS) consist of
high voltage power SenseFET and current mode PWM IC.
Included PWM controller features integrated fixed oscillator,
under voltage lock out, optimized gate turn-on/turn-off
driver, thermal shut down protection, over voltage protection,
and temperature compensated precision current sources for
loop compensation and fault protection circuitry. compared to
discrete MOSFET and controller or R
CC
switching
converter solution, a Fairchild Power Switch(FPS) can
reduce total component count, design size, and weight and at
the same time increase efficiency, productivity, and system
reliability. It has a basic platform well suited for cost
effective monitor power supply.
TO-3P-5L
1
Internal Block Diagram
Vref
3
Vpp=5.8/7.2V
OSC
Internal
Bias
Vref
Vfb
Vth=1V
Burst mode
controller
Vref
1
5
UVLO
S
Q
Ron
Vcc
Vth=11V/12V
R
Roff
PWM
4
Ifb
2.5R
R
Vcc
Vfb Offset
Rsenese
Vref
Idelay
OLP
Vth=7.5V
Vcc
Vth=30V
OVP
OCL
Filter
(130nsec)
TS
D
Vth=1V
2
S
UVLO Reset
(Vcc=9V)
Q
Q
S
R
UVLO Reset
(Vcc=9V)
(Tj=160℃)
R
Rev.1.0.1
©2001 Fairchild Semiconductor Corporation
FS6S1565RB
Absolute Maximum Ratings
(Ta=25°C, unless otherwise specified)
Parameter
Drain-source(GND) voltage
(1)
Drain-Gate Voltage (R
GS
=1MΩ)
Gate-source (GND) Voltage
Drain current pulsed
(2)
Single pulsed avalanche energy
(3)
Single Pulsed Avalanche current
(4)
Continuous drain current (Tc = 25°C)
Continuous drain current (T
C
=100°C)
Supply voltage
Input Voltage Range
Total Power Dissipation
Operating junction temperature
Operating Ambient Temperature
Storage Temperature range
Symbol
V
DSS
V
DGR
V
GS
I
DM
E
AS
I
AS
I
D
I
D
V
CC
V
FB
V
S_S
P
D
(Watt H/S)
Derating
T
j
T
A
T
STG
Value
650
650
±30
60
1040
37
15
9.5
35
−0.3
to V
CC
−0.3
to 10
270
2.17
+160
−25
to +85
−55
to +150
Unit
V
V
V
A
DC
mJ
A
A
DC
A
DC
V
V
V
W
W/°C
°C
°C
°C
Notes:
1. Tj=25°C to 150°C
2. Repetitive rating: Pulse width limited by maximum junction temperature
3. L=8.5mH, starting Tj=25°C
4. L=13uH, starting Tj=25°C
2
FS6S1565RB
Electrical Characteristics (SFET part)
(Ta=25°C unless otherwise specified)
Parameter
Drain-source breakdown voltage
Zero gate voltage drain current
Static drain-source on resistance
(note)
Forward transconductance
(note)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn on delay time
Rise time
Turn off delay time
Fall time
Total gate charge
(gate-source+gate-drain)
Gate source charge
Gate drain (Miller) charge
Single Pulsed Avalanche current
(1)
Note:
Pulse test : Pulse width
≤
300µS, duty 2%
1
S
= ---
-
R
1. L=13uH, starting Tj=25°C
Symbol
BV
DSS
I
DSS
R
DS(ON)
gfs
Ciss
Coss
Crss
t
d(on)
tr
t
d(off)
tf
Qg
Qgs
Qgd
I
AS
Condition
V
GS
= 0V, I
D
= 250µA
V
DS
= 650V, V
GS
= 0V
V
DS
= 520V
V
GS
= 0V, T
C
= 125°C
V
GS
= 10V, I
D
= 7.5A
V
DS
= 50V, I
D
= 7.5A
V
GS
= 0V, V
DS
= 25V,
f = 1MHz
V
DD
= 325V, I
D
= 15A
(MOSFET switching
time are essentially
independent of
operating temperature)
V
GS
= 10V, I
D
= 15A,
V
DS
= 520V (MOSFET
Switching time are
Essentially independent of
Operating temperature)
V
CC
= V
FB
= V
SS
= GND
Min.
650
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
0.5
-
2580
270
50
50
155
270
125
90
15
45
37
Max.
-
200
300
0.65
-
-
-
-
-
-
-
-
-
-
-
-
Unit
V
µA
µA
Ω
S
pF
nS
nC
A
3
FS6S1565RB
Electrical Characteristics
(Ta=25°C unless otherwise specified)
Parameter
UVLO SECTION
Start threshold voltage
Stop threshold voltage
SENSEFET SECTION
Drain to PKG Breakdown voltage
Drain to Source Breakdown voltage
Drain to Source Leakage current
OSCILLATOR SECTION
Initial Frequency
Voltage Stability
Temperature Stability (note4)
Maximum duty cycle
Minimum Duty Cycle
FEEDBACK SECTION
Feedback source current
Shutdown Feedback voltage
Shutdown delay current
PROTECTION SECTION
Over Voltage Protection
Over Current Latch Voltage (Note2)
Thermal Shutdown Temp.(Note4)
V
OVP
V
OCL
T
SD
Vsync
≥
11V
-
-
27
0.9
140
30
1.0
160
33
1.1
-
V
V
°C
I
FB
V
SD
Idelay
V
FB
= GND
Vfb
≥
6.9V
V
FB
= 5V
0.7
6.9
1.6
0.9
7.5
2.0
1.1
8.1
2.4
mA
V
µA
F
OSC
F
STABLE
∆F
OSC
D
MAX
D
MIN
-
12V
≤
Vcc
≤
23V
-25°C
≤
Ta
≤
85°C
-
-
22
0
0
92
-
25
1
±5
95
-
28
3
±10
98
0
kHz
%
%
%
%
BVpkg
BVdss
Idss
60HZ AC, Ta = 25°C
Vdrain = 650V, Ta = 25°C
Vdrain = 650V, Ta = 25°C
3500
650
-
-
-
-
-
-
300
V
V
uA
V
START
V
STOP
V
FB
= GND
V
FB
= GND
14
8
15
9
16
10
V
V
Symbol
Condition
Min. Typ. Max. Unit
4
FS6S1565RB
Electrical Characteristics (Continued)
(Ta=25°C unless otherwise specified)
Parameter
Sync & SOFTSTART SECTION
Softstart Vortage
Softstart Current
Sync High Threshold Voltage
Sync Low Threshold Voltage
BURST MODE SECTION
Burst mode Low Threshold Voltage
Burst mode High Threshold Voltage
Burst mode Enable Feedback Voltage (Note4)
Burst mode Peak Current Limit (Note3)
Burst mode Frequency
CURRENT LIMIT(SELF-PROTECTION)SECTION
Peak Current Limit (Note3)
TOTAL DEVICE SECTION
Start Up current
Operating supply current (Note1)
I
START
I
OP
I
OP(MIN)
I
OP(MAX)
Vfb = GND, V
CC
= 14V
Vfb = GND, V
CC
= 16V
Vfb = GND, V
CC
= 10V
Vfb = GND, V
CC
= 28V
-
10
15
mA
-
0.1
0.17
mA
I
OVER
-
8.5
9.7
10.9
A
V
BURL
V
BURH
V
BEN
I
BU_PK
F
BUR
Vfb = 0V
Vfb = 0V
Vcc = 10.5V
Vcc = 10.5V
Vcc = 10.5V, Vfb = 0V
10.4
11.4
0.7
0.6
40
11.0
12.0
1.0
0.85
50
11.6
12.6
1.3
1.1
60
V
V
V
V
KHz
V
SS
I
SS
V
SYNCH
V
SYNCL
Vfb = 2
Vss = V
Vcc = 16V, Vfb = 5V
Vcc = 16V, Vfb = 5V
4.7
0.8
-
-
5.0
1.0
7.2
5.8
5.3
1.2
-
-
V
mA
V
V
Symbol
Condition
Min. Typ. Max. Unit
Notes:
(1) These parameters is the current flowing in the Control IC.
(2) These parameters, although guaranteed, are tested in EDS(wafer test) process.
(3) These parameters indicate Inductor Current.
(4) These parameters, although guranteed at the design, are not tested in massing production.
5
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