CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
TEST CONDITIONS
I
D
= 1mA, V
GS
= 0V
V
GS
= V
DS
,
I
D
= 1mA
T
C
= -55
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
MIN
60
-
-2.0
-1.0
-
-
-
-
-
-
-
-
-
-
-
V
GS
= 0V to -20V
V
GS
= 0V to -12V
V
GS
= 0V to -2V
V
DD
= -30V,
I
D
= 55A
-
-
-
-
-
I
D
= 55A, V
DS
= -15V
V
DS
= -25V, V
GS
= 0V,
f = 1MHz
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
-
-
0.020
-
-
-
-
-
-
130
-
36
42
-6
6300
2250
300
-
-
MAX
-
-7.0
-6.0
-
25
250
100
200
-1.75
0.029
0.044
55
90
80
35
250
160
16
48
53
-
-
-
-
0.83
40
UNITS
V
V
V
V
µA
µA
nA
nA
V
Ω
Ω
ns
ns
ns
ns
nC
nC
nC
nC
nC
V
pF
pF
pF
o
C/W
o
C/W
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -48V,
V
GS
= 0V
V
GS
=
±20V
Gate to Source Leakage Current
I
GSS
Drain to Source On-State Voltage
Drain to Source On Resistance
V
DS(ON)
r
DS(ON)12
V
GS
= -12V, I
D
= 55A
I
D
= 35A,
V
GS
= -12V
T
C
= 25
o
C
T
C
= 125
o
C
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate Charge at 12V
Threshold Gate Charge
Gate Charge Source
Gate Charge Drain
Plateau Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
Q
g(12)
Q
g(TH)
Q
gs
Q
gd
V
(PLATEAU)
C
ISS
C
OSS
C
RSS
R
θ
JC
R
θ
JA
V
DD
= -30V, I
D
= 55A,
R
L
= 0.55Ω, V
GS
= -12V,
R
GS
= 2.35Ω
3-222
FSJ9055D, FSJ9055R
Source to Drain Diode Specifications
PARAMETER
Forward Voltage
Reverse Recovery Time
SYMBOL
V
SD
t
rr
TEST CONDITIONS
I
SD
= 55A
I
SD
= 55A, dI
SD
/dt = 100A/µs
MIN
-0.6
-
TYP
-
-
MAX
-1.8
110
UNITS
V
ns
Electrical Specifications up to 100K RAD
PARAMETER
Drain to Source Breakdown Volts
Gate to Source Threshold Volts
Gate to Body Leakage
Zero Gate Leakage
Drain to Source On-State Volts
Drain to Source On Resistance
NOTES:
1. Pulse test, 300µs Max.
2. Absolute value.
(Note 3)
(Note 3)
(Notes 2, 3)
(Note 3)
(Notes 1, 3)
(Notes 1, 3)
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
I
GSS
I
DSS
V
DS(ON)
r
DS(ON)12
TEST CONDITIONS
V
GS
= 0, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±20V,
V
DS
= 0V
V
GS
= 0, V
DS
= -48V
V
GS
= -12V, I
D
= 55A
V
GS
= -12V, I
D
= 35A
MIN
-60
-2.0
-
-
-
-
MAX
-
-6.0
100
25
-1.75
0.029
UNITS
V
V
nA
µA
V
Ω
3. Insitu Gamma bias must be sampled for both V
GS
= -12V, V
DS
= 0V and V
GS
= 0V, V
DS
= 80% BV
DSS
.
Single Event Effects (SEB, SEGR)
(Note 4)
ENVIRONMENT
(NOTE 5)
ION
SPECIES
Ni
Br
Br
Br
Br
I
I
I
I
NOTES:
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
5. Fluence = 1E5 ions/cm
2
(typical), T = 25
o
C.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
TYPICAL LET
(MeV/mg/cm)
26
37
37
37
60
60
60
60
60
TYPICAL
RANGE (µ)
43
36
36
36
31
31
31
31
31
APPLIED
V
GS
BIAS
(V)
20
10
15
20
0
5
10
15
20
(NOTE 6)
MAXIMUM
V
DS
BIAS
(V)
-60
-60
-48
-36
-60
-48
-36
-24
-12
TEST
Single Event Effects Safe Operating
Area
SYMBOL
SEESOA
Typical Performance Curves
Unless Otherwise Specified
1E-3
LIMITING INDUCTANCE (HENRY)
LET = 26MeV/mg/cm
2
, RANGE = 43µ
LET = 37MeV/mg/cm
2
, RANGE = 36µ
LET = 60MeV/mg/cm
2
, RANGE = 31µ
-70
-60
-50
V
DS
(V)
-40
-30
-20
-10
0
0
TEMP = 25
o
C
5
10
V
GS
(V)
15
20
25
FLUENCE = 1E5 IONS/cm
2
(TYPICAL)
1E-4
ILM = 10A
30A
1E-5
100A
300A
1E-6
1E-7
-10
-30
-100
DRAIN SUPPLY (V)
-300
-1000
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT
GAMMA DOT CURRENT TO I
AS
3-223
FSJ9055D, FSJ9055R
Typical Performance Curves
70
60
50
I
D
, DRAIN (A)
40
30
20
10
0
-50
I
D
, DRAIN CURRENT (A)
100
100µs
Unless Otherwise Specified
(Continued)
500
T
C
= 25
o
C
1ms
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
1
1
10ms
100ms
0
50
100
150
T
C
, CASE TEMPERATURE (
o
C)
10
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
200
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
2.5
PULSE DURATION = 250ms, V
GS
= -12V, I
D
= 35A
2.0
Q
G
NORMALIZED r
DS(ON)
-12V
1.5
Q
GS
V
G
Q
GD
1.0
0.5
CHARGE
0.0
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 5. BASIC GATE CHARGE WAVEFORM
10
1
NORMALIZED THERMAL RESPONSE (Z
θ
JC
)
FIGURE 6. NORMALIZED r
DS(ON)
vs JUNCTION TEMPERATURE
10
0
0.5
0.2
10
-1
0.1
0.05
0.02
0.01
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
+ T
C
10
-3
10
-5
10
-4
10
-3
10
-2
10
-1
t, RECTANGULAR PULSE DURATION (s)
10
0
t
1
t
2
10
1
10
-2
P
DM
FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
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