CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
TEST CONDITIONS
I
D
= 1mA, V
GS
= 0V
V
GS
= V
DS
,
I
D
= 1mA
T
C
= -55
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
MIN
100
-
1.5
0.5
-
-
-
-
-
-
-
-
-
-
-
V
GS
= 0V to 20V
V
GS
= 0V to 12V
V
GS
= 0V to 2V
V
DD
= 50V,
I
D
= 9A
-
-
-
-
-
I
D
= 9A, V
DS
= 15V
V
DS
= 25V, V
GS
= 0V, f = 1MHz
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
-
-
0.130
-
-
-
-
-
-
35
-
6.7
19
8
760
310
110
-
-
MAX
-
5.0
4.0
-
25
250
100
200
1.70
0.180
0.290
20
80
45
30
60
41
1.9
8.2
22
-
-
-
-
5.0
175
UNITS
V
V
V
V
µA
µA
nA
nA
V
Ω
Ω
ns
ns
ns
ns
nC
nC
nC
nC
nC
V
pF
pF
pF
o
C/W
o
C/W
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
I
DSS
I
GSS
V
DS(ON)
r
DS(ON)12
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
Q
g(12)
Q
g(TH)
Q
gs
Q
gd
V
(PLATEAU)
C
ISS
C
OSS
C
RSS
R
θ
JC
R
θ
JA
V
DS
= 80V,
V
GS
= 0V
V
GS
=
±20V
V
GS
= 12V, I
D
= 9A
I
D
= 6A,
V
GS
= 12V
Gate to Source Leakage Current
Drain to Source On-State Voltage
Drain to Source On Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate Charge at 12V
Threshold Gate Charge
Gate Charge Source
Gate Charge Drain
Plateau Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
V
DD
= 50V, I
D
= 9A,
R
L
= 5.56Ω, V
GS
= 12V,
R
GS
= 7.5Ω
4-2
FSL13A0D, FSL13A0R
Source to Drain Diode Specifications
PARAMETER
Forward Voltage
Reverse Recovery Time
SYMBOL
V
SD
t
rr
I
SD
= 9A
I
SD
= 9A, dI
SD
/dt = 100A/µs
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
(Note 3)
(Note 3)
(Notes 2, 3)
(Note 3)
(Notes 1, 3)
(Notes 1, 3)
BV
DSS
V
GS(TH)
I
GSS
I
DSS
V
DS(ON)
r
DS(ON)12
TEST CONDITIONS
V
GS
= 0, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±20V,
V
DS
= 0V
V
GS
= 0, V
DS
= 80V
V
GS
= 12V, I
D
= 9A
V
GS
= 12V, I
D
= 6A
MIN
100
1.5
-
-
-
-
MAX
-
4.0
100
25
1.70
0.180
UNITS
V
V
nA
µA
V
Ω
TEST CONDITIONS
MIN
0.6
-
TYP
-
-
MAX
1.8
260
UNITS
V
ns
Electrical Specifications up to 100K RAD
PARAMETER
Drain to Source Breakdown Volts
Gate to Source Threshold Volts
Gate to Body Leakage
Zero Gate Leakage
Drain to Source On-State Volts
Drain to Source On Resistance
NOTES:
1. Pulse test, 300µs Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both V
GS
= 12V, V
DS
= 0V and V
GS
= 0V, V
DS
= 80% BV
DSS
.
Single Event Effects (SEB, SEGR)
(Note 4)
ENVIRONMENT
(NOTE 5)
TEST
Single Event Effects Safe Operating Area
SYMBOL
SEESOA
ION
SPECIES
Ni
Br
Br
Br
NOTES:
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
5. Fluence = 1E5 ions/cm
2
(typical), T = 25
o
C.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
TYPICAL LET
(MeV/mg/cm)
26
37
37
37
TYPICAL
RANGE (µ)
43
36
36
36
APPLIED
V
GS
BIAS
(V)
-20
-10
-15
-20
(NOTE 6)
MAXIMUM
V
DS
BIAS (V)
100
100
80
50
Typical Performance Curves
Unless Otherwise Specified
LET = 26MeV/mg/cm
2
, RANGE = 43µ
LET = 37MeV/mg/cm
2
, RANGE = 36µ
120
100
80
V
DS
(V)
60
40
20
TEMP = 25
o
C
0
0
-5
-10
V
GS
(V)
-15
-20
-25
LIMITING INDUCTANCE (HENRY)
FLUENCE = 1E5 IONS/cm
2
(TYPICAL)
1E-3
1E-4
ILM = 10A
30A
1E-5
100A
300A
1E-6
1E-7
10
30
100
DRAIN SUPPLY (V)
300
1000
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT
GAMMA DOT CURRENT TO I
AS
4-3
FSL13A0D, FSL13A0R
Typical Performance Curves
12
Unless Otherwise Specified
(Continued)
100
T
C
= 25
o
C
10
I
D
, DRAIN CURRENT (A)
10
100µs
I
D
, DRAIN (A)
8
6
1ms
4
2
0
-50
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
1
10
100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10ms
100ms
0
50
100
150
0.1
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
2.5
PULSE DURATION = 250ms, V
GS
= 12V, I
D
= 6A
2.0
12V
Q
G
NORMALIZED r
DS(ON)
1.5
Q
GS
V
G
Q
GD
1.0
0.5
CHARGE
BASIC GATE CHARGE WAVEFORM
0.0
-80
-40
0
40
80
120
160
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 5. BASIC GATE CHARGE WAVEFORM
FIGURE 6. NORMALIZED r
DS(ON)
vs JUNCTION TEMPERATURE
10
NORMALIZED THERMAL RESPONSE (Z
θ
JC
)
1
0.5
0.2
0.1
0.05
0.02
0.01
0.01
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
+ T
C
10
-4
10
-3
10
-2
10
-1
t, RECTANGULAR PULSE DURATION (s)
10
0
SINGLE PULSE
0.1
P
DM
t
1
t
2
10
1
0.001
10
-5
FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
[Lazy self-care fish tank control system] BLE_MESH fish tank light peripheral production
Pack the fish tank light today
1. Use dark plexiglass panels as side panels and add waterproof joints2. Transpa...
蓝雨夜onsemi and Avnet IoT Innovation Design Competition
Hello everyone!! The development board I use is Infineon's XC2765. When I want to debug SPI and configure DAvE, I encounter several problems. . . . In the figure below, the first and third are the fun...
[b]Table of Contents:[/b] Chapter 1 Overview of High Frequency Circuits 1.1 Hands-on experience with high frequency circuits 1.2 Basic knowledge of high frequency circuits Chapter 2 Design and product...
Yaffs2 is currently the first choice for Linux NAND systems, and I won't explain it in detail. There are two examples in the vc simulation, the first is the example of NAND 2K page, and the other is t...
[i=s] This post was last edited by Chen Shaohua on 2018-6-23 13:37 [/i] There are many different prototyping boards and development boards for MicroPython. The most powerful prototyping board used in ...
As the number of cars increases, environmental pressures are also increasing. At this time, some people are saying that new energy vehicles are energy-efficient and environmentally friendly, and ar...[Details]
With the rapid development of technology, automotive intelligence is increasing at an unprecedented rate. This not only enhances vehicle functionality and comfort, but also places higher deman...[Details]
White light LEDs are voltage-sensitive devices. In actual operation, their upper limit is 20mA. However, the current often increases due to various reasons during use. If no protective measures are...[Details]
The Automotive Testing and Quality Assurance Expo (ATE 2025) will open on August 27th. At the expo, Rohde & Schwarz (R&S) will showcase six automotive testing solutions, themed "Intelligently Drivi...[Details]
Since the beginning of this year, price wars have intensified, new models have been launched one after another, used cars with zero kilometers have become a hot topic, and the industry's internal c...[Details]
While the current industry consensus is that autonomous vehicles are robots and that their systems are managed using robotics-developed thinking, there are also cases where autonomous driving is ac...[Details]
With the continuous development of the industrial automation industry, we are seeing an increasing number of intelligent devices using flexible, efficient, and precise robotic arms to p...[Details]
On August 21, it was reported that Intel's new generation of AI chip Jaguar Shores was recently exposed for the first time.
According to photos shared by Andreas Schilling, the Jaguar Shores t...[Details]
Puttshack's Trackaball uses the Nordic nRF54L15 system-on-chip (SoC) to monitor sensors and enable Bluetooth low energy connectivity, while the nPM2100 power management integrated circuit (PMIC) ...[Details]
On August 20, it was reported that the specifications of Intel's upcoming Panther Lake mobile processor appeared on the Intel GFX CI website, which mainly focuses on Intel's open source Linux drive...[Details]
Driven by business opportunities such as access to new markets and government initiatives like the Belt and Road Initiative, global expansion has become a significant trend for Chinese companies. C...[Details]
Renesas Electronics introduces a new USB-C power solution with an innovative three-level topology.
Improve performance while reducing system size
New solution combines excel...[Details]
Using an electronic load is like thinking of it as a resistor that dissipates the power supply's output. The most straightforward mode is the CR constant resistance mode. In this mode, by setting a...[Details]
Amid the increasing complexity of electronic system power management,
power architecture design
is undergoing a paradigm shift from experience-driven to tool-enabled.
Analog
Devices...[Details]
Most electric vehicles currently lack a gearbox, only a single-speed reduction gearbox. This includes Teslas, but that doesn't mean electric vehicles don't need a gearbox. Thanks to the constant to...[Details]
onsemi and Avnet IoT Innovation Design Competition
京公网安备 11010802033920号
EEWORLD
