RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FSM101
THRU
FSM107
SURFACE MOUNT GLASS PASSIVATED
FAST RECOVERY SILICON RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere
FEATURES
*
*
*
*
*
*
*
Fast switching
Glass passivated device
Ideal for surface mounted applications
Low leakage current
Metallurgically bonded construction
Mounting position: Any
Weight: 0.015 gram
MELF
MECHANICAL DATA
* Epoxy : Device has UL flammability classification 94V-0
.205 (5.2)
.190 (4.8)
SOLDERABLE
ENDS
.028 (.60)
.018 (.46)
.106 (2.7)
.095 (2.4)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Dimensions in inches and (millimeters)
o
MAXIMUM RATINGS
(At T
A
= 25
o
C unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current at T
A
= 55
o
C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum Thermal Resistance
Typical Junction Capacitance (Note 1)
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS
(At T
A
= 25
o
C unless otherwise noted)
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Full Load Reverse Current,Full cycle Average at T
A
= 55
o
C
Maximum Average Reverse Current at
Rated DC Blocking Voltage
Maximum Reverse Recovery Time (Note 4)
@T
A
= 25
o
C
@T
A
= 125
o
C
SYMBOL
V
F
I
R
trr
150
FSM101 FSM102 FSM103 FSM104 FSM105 FSM106 FSM107 UNITS
1.3
50
5.0
100
250
500
Volts
uAmps
uAmps
uAmps
nSec
2001-4
SYMBOL
V
RRM
V
RMS
V
DC
I
O
I
FSM
(Note 2) Rθ
JL
(Note 3) Rθ
JA
C
J
T
J
, T
STG
FSM101 FSM102 FSM103 FSM104 FSM105 FSM106 FSM107 UNITS
50
35
50
100
70
100
200
140
200
400
280
400
1.0
30
30
75
15
-65 to + 175
600
420
600
800
560
800
1000
700
1000
Volts
Volts
Volts
Amps
Amps
0
0
C/ W
C/ W
pF
0
C
NOTES : 1. Measured at 1.0 MHz and applied average voltage of 4.0VDC
2. Thermal resistance junction to terminal 6.0mm
2
copper pads to each terminal.
3. Thermal resistance junction to ambient, 6.0mm
2
copper pads to each terminal.
4. Test Conditions: I
F
= 0.5A, I
R
= -1.0A, I
RR
= -0.25A
RATING AND CHARACTERISTIC CURVES ( FSM101 THRU FSM107 )
AVERAGE FORWARD CURRENT, (A)
FORWARD SURGE CURRENT, (A)
FIG. 1 - TYPICAL FORWARD CURRENT
DERATING CURVE
1.0
.8
.6
.4
.2
0
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
FIG. 2 - MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
50
40
30
20
10
8.3ms Single Half Sine-Wave
(JEDED Method)
0
1
2
4 6 8 10 20
40 60 80 100
NUMBER OF CYCLES AT 60Hz
0
25
50
75 100 125 150 175
AMBIENT TEMPERATURE, ( )
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS REVERSE CURRENT, (uA)
10
4
TJ = 100
INSTANTANEOUS FORWARD CURRENT, (A)
FIG. 4 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
20
10
TJ = 25
Pulse Width = 300us
1% Duty Cycle
1.0
.4
1.0
.1
.04
TJ = 25
.1
.01
0
20 40
60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
FIG. 5 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY
TIME CHARACTERISTIC
50
NONINDUCTIVE
10
NONINDUCTIVE
+0.5A
(+)
25 Vdc
(approx)
(¡V)
D.U.T
(¡V)
PULSE
GENERATOR
.01
.6
.8
1.0
1.2
1.4
INSTANTANEOUS FORWARD VOLTAGE, (V)
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
200
100
60
40
20
10
6
4
2
1
.1
.2 .4
1.0 2 4
10 20 40 100
REVERSE VOLTAGE, ( V )
TJ = 25
trr
0
-0.25A
(NOTE 2)
1
NON-
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
(+)
1
NOTES: Rise Time = 7ns max. Input Impedance =
1 megohm. 22 pF.
2. Rise Time = 10ns max. Source Impedance =
50 ohms.
-1.0A
1cm
SET TIME BASE FOR
50/100 ns/cm
JUNCTION CAPACITANCE, (pF)
RECTRON
Microcontroller MCU
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