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FW202

Description
Power Field-Effect Transistor, 5A I(D), 20V, 0.065ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
CategoryDiscrete semiconductor    The transistor   
File Size42KB,3 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric View All

FW202 Overview

Power Field-Effect Transistor, 5A I(D), 20V, 0.065ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8

FW202 Parametric

Parameter NameAttribute value
Objectid1449020091
Parts packaging codeSOT
package instructionSMALL OUTLINE, R-PDSO-G8
Contacts8
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (Abs) (ID)5 A
Maximum drain current (ID)5 A
Maximum drain-source on-resistance0.065 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G8
Number of components2
Number of terminals8
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)2 W
Maximum pulsed drain current (IDM)48 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Ordering number : EN5318A
N-Channel Silicon MOSFET
FW202
Ultrahigh-Speed Switching Applications
Features
• Low ON resistance
• Ultrahigh-speed switching.
• Composite type with two 4V-drive N-channel MOSFETs
facilitating high-density mounting.
• Matched pair capability.
Package Dimensions
unit: mm
2129-SOP8
[FW202]
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Conditions
Ratings
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : SOP8
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board
(1000mm
2
×0.8mm)
1unit
Mounted on a ceramic board
(1000mm
2
×0.8mm)
20
±20
5
48
1.7
2.0
150
–55 to +150
Unit
V
V
A
A
W
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
D-S Breakdown Voltage
Zero-Gate-Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source
ON-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
y
fs
RDS(on)
RDS(on)
Ciss
Coss
Crss
Conditions
ID=1mA, VGS=0
VDS=20V, VGS=0
VGS=±16V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=5A
ID=5A, VGS=10V
ID=5A, VGS=4V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
Ratings
min
20
typ
max
100
±10
2.5
8
32
48
550
400
130
40
65
Unit
V
µA
µA
V
S
mΩ
mΩ
pF
pF
pF
1.0
5
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
O1397TS (KOTO) TA-0226 No.5318-1/3
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