IPB80N04S4-04
IPI80N04S4-04, IPP80N04S4-04
OptiMOS -T2 Power-Transistor
®
Product Summary
V
DS
R
DS(on),max
(SMD version)
I
D
40
4.2
80
PG-TO262-3-1
V
mΩ
A
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
PG-TO263-3-2
PG-TO220-3-1
Type
IPB80N04S4-04
IPI80N04S4-04
IPP80N04S4-04
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
4N0404
4N0404
4N0404
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
1)
Symbol
I
D
Conditions
T
C
=25°C,
V
GS
=10V
T
C
=100°C,
V
GS
=10V
2)
Pulsed drain current
2)
Avalanche energy, single pulse
2)
Avalanche current, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
I
D,pulse
E
AS
I
AS
V
GS
P
tot
T
j
,
T
stg
T
C
=25°C
I
D
=40A
-
-
T
C
=25°C
-
-
Value
80
80
320
100
80
±20
71
-55 ... +175
55/175/56
mJ
A
V
W
°C
Unit
A
Rev. 1.0
page 1
2010-04-06
IPB80N04S4-04
IPI80N04S4-04, IPP80N04S4-04
Parameter
Symbol
Conditions
min.
Thermal characteristics
2)
Thermal resistance, junction - case
Thermal resistance, junction -
ambient, leaded
SMD version, device on PCB
R
thJC
R
thJA
R
thJA
-
-
minimal footprint
6 cm
2
cooling area
3)
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
(BR)DSS
V
GS
=0V,
I
D
= 1mA
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
=35µA
V
DS
=40V,
V
GS
=0V
V
DS
=18V,
V
GS
=0V,
T
j
=85°C
2)
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=20V,
V
DS
=0V
V
GS
=10V,
I
D
=80A
V
GS
=10V,
I
D
=80A,
SMD version
40
2.0
-
-
-
-
-
-
3.0
0.02
1
-
4.3
3.9
-
4.0
1
20
100
4.6
4.2
nA
mΩ
µA
V
-
-
-
-
-
-
-
-
2.1
62
62
40
K/W
Values
typ.
max.
Unit
Rev. 1.0
page 2
2010-04-06
IPB80N04S4-04
IPI80N04S4-04, IPP80N04S4-04
Parameter
Symbol
Conditions
min.
Dynamic characteristics
2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
2)
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
2)
Diode pulse current
2)
Diode forward voltage
I
S
I
S,pulse
V
SD
T
C
=25°C
V
GS
=0V,
I
F
=80A,
T
j
=25°C
V
R
=20V,
I
F
=50A,
di
F
/dt =100A/µs
-
-
-
-
-
0.9
80
320
1.3
V
A
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=32V,
I
D
=80A,
V
GS
=0 to 10V
-
-
-
-
16
5
33
5.8
20
12
43
-
V
nC
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=20V,
V
GS
=10V,
I
D
=80A,
R
G
=3.5Ω
V
GS
=0V,
V
DS
=25V,
f
=1MHz
-
-
-
-
-
-
-
2650
650
20
10
12
9
12
3440
840
46
-
-
-
-
ns
pF
Values
typ.
max.
Unit
Reverse recovery time
2)
t
rr
-
39
-
ns
Reverse recovery charge
2)
1)
Q
rr
-
35
-
nC
Current is limited by bondwire; with an
R
thJC
= 2.1K/W the chip is able to carry 98A at 25°C.
Defined by design. Not subject to production test.
2)
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2010-04-06
IPB80N04S4-04
IPI80N04S4-04, IPP80N04S4-04
1 Power dissipation
P
tot
= f(T
C
);
V
GS
≥
6 V
2 Drain current
I
D
= f(T
C
);
V
GS
≥
6 V; SMD
80
70
60
60
50
80
P
tot
[W]
40
30
20
10
0
0
50
100
150
200
I
D
[A]
40
20
0
0
50
100
150
200
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
= f(V
DS
);
T
C
= 25 °C;
D
= 0; SMD
parameter:
t
p
1000
4 Max. transient thermal impedance
Z
thJC
= f(t
p
)
parameter:
D
=t
p
/T
10
1
1 µs
10
0
100
10 µs
0.5
Z
thJC
[K/W]
I
D
[A]
0.1
100 µs
10
-1
0.05
1 ms
10
10
-2
0.01
single pulse
1
0.1
1
10
100
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
Rev. 1.0
page 4
2010-04-06
IPB80N04S4-04
IPI80N04S4-04, IPP80N04S4-04
5 Typ. output characteristics
I
D
= f(V
DS
);
T
j
= 25 °C; SMD
parameter:
V
GS
300
15
5.5 V
6V
6.5 V
6 Typ. drain-source on-state resistance
R
DS(on)
= f(I
D
);
T
j
= 25 °C; SMD
parameter:
V
GS
240
7V
13
11
R
DS(on)
[mΩ]
180
I
D
[A]
10 V
6.5 V
9
120
6V
7
7V
5
10 V
60
5.5 V
3
5V
0
0
1
2
3
4
1
0
20
40
60
80
100
120
140
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
= f(V
GS
);
V
DS
= 6V
parameter:
T
j
240
8 Typ. drain-source on-state resistance
R
DS(on)
= f(T
j
);
I
D
= 80 A;
V
GS
= 10 V; SMD
7
6.5
200
6
5.5
160
R
DS(on)
[m
Ω
]
175 °C
25 °C
-55 °C
5
4.5
4
3.5
I
D
[A]
120
80
40
3
2.5
2
-60
-20
20
60
100
140
180
0
3
4
5
6
7
V
GS
[V]
T
j
[°C]
Rev. 1.0
page 5
2010-04-06
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