IS63WV1288DALL/DALS
IS63WV1288DBLL/DBLS
IS64WV1288DBLL/DBLS
128K x 8 HIGH-SPEED CMOS STATIC RAM
FEATURES
HIGH SPEED: (IS63/64WV1288DALL/DBLL)
• High-speed access time: 8, 10, 12, 20 ns
• Low Active Power: 135 mW (typical)
• Low Standby Power: 12 µW (typical)
CMOS standby
LOW POWER: (IS63/64WV1288DALS/DBLS)
• High-speed access time: 25, 35 ns
• Low Active Power: 55 mW (typical)
• Low Standby Power: 12 µW (typical)
CMOS standby
• Single power supply
— V
dd
1.65V to 2.2V (IS63WV1288DAxx)
— V
dd
2.4V to 3.6V (IS63/64WV1288DBxx)
• Multiple center power and ground pins for
greater noise immunity
• Easy memory expansion with
CE
and
OE
options
•
CE
power-down
• Fully static operation: no clock or refresh
required
• TTL compatible inputs and outputs
• Lead-free available
DECEMBER 2011
DESCRIPTION
The
ISSI
IS63/64WV1288Dxxx is a very high-speed,
low power, 131,072-word by 8-bit CMOS static RAM.
The IS63/64WV1288DBLL is fabricated using
ISSI
's
high-performance CMOS technology. This highly reliable
process coupled with innovative circuit design
techniques, yields higher performance and low power
consumption devices.
When
CE
is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be re-
duced down to 25 µW (typical) with CMOS input levels.
The IS63/64WV1288DBLL operates from a single V
dd
power supply. The IS63/64WV1288Dxxx is available in
32-pin TSOP (Type II), 32-pin sTSOP (Type I), 48-Ball
miniBGA (6mm x 8mm), 32-pin SOJ (400-mil) and 32-
pin SOJ (300-mil) packages.
FUNCTIONAL BLOCK DIAGRAM
A0-A16
DECODER
128K X 8
MEMORY ARRAY
VDD
GND
I/O
DATA
CIRCUIT
I/O0-I/O7
COLUMN I/O
CE
OE
WE
CONTROL
CIRCUIT
Copyright © 2011 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI
assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device
specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be ex-
pected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon
Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. B
12/15/2011
1
IS63WV1288DALL/DALS
IS63WV1288DBLL/DBLS
IS64WV1288DBLL/DBLS
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
V
DD
= 3.3V + 5%
Symbol
V
oh
V
ol
V
Ih
V
Il
I
lI
I
lo
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
(1)
Input Leakage
Output Leakage
Test Conditions
V
dd
=
Min., I
oh
=
–4.0 mA
V
dd
=
Min., I
ol
=
8.0 mA
GND ≤ V
In
≤
V
dd
GND ≤ V
out
≤
V
dd
,
Outputs Disabled
Min.
2.4
—
2
–0.3
–1
–1
Max.
—
0.4
V
dd
+ 0.3
0.8
1
1
Unit
V
V
V
V
µA
µA
Note:
1.
V
Il
(min.) = –0.3V DC; V
Il
(min.) = –2.0V AC (pulse width < 10 ns). Not 100% tested.
V
Ih
(max.) = V
dd
+ 0.3V
dc; V
Ih
(max.) = V
dd
+ 2.0V
Ac (pulse width < 10 ns). Not 100% tested.
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
V
DD
= 2.4V-3.6V
Symbol Parameter
V
oh
V
ol
V
Ih
V
Il
I
lI
I
lo
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
(1)
Input Leakage
Output Leakage
Test Conditions
V
dd
=
Min., I
oh
=
–1.0 mA
V
dd
=
Min., I
ol
=
1.0 mA
GND ≤
V
In
≤
V
dd
GND ≤
V
out
≤
V
dd
,
Outputs Disabled
Min.
1.8
—
2.0
–0.3
–1
–1
Max.
—
0.4
V
dd
+ 0.3
0.8
1
1
Unit
V
V
V
V
µA
µA
Note:
1.
V
Il
(min.) = –0.3V DC; V
Il
(min.) = –2.0V AC (pulse width < 10 ns). Not 100% tested.
V
Ih
(max.) = V
dd
+ 0.3V
dc; V
Ih
(max.) = V
dd
+ 2.0V
Ac (pulse width < 10 ns). Not 100% tested.
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
V
DD
= 1.65V-2.2V
Symbol Parameter
V
oh
Output HIGH Voltage
V
ol
Output LOW Voltage
V
Ih
V
Il
(1)
I
lI
I
lo
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Output Leakage
Test Conditions
I
oh
=
-0.1 mA
I
ol
=
0.1 mA
V
DD
1.65-2.2V
1.65-2.2V
Min.
1.4
—
1.4
–0.2
–1
–1
Max.
—
0.2
V
dd
+ 0.2
0.4
1
1
Unit
V
V
V
V
µA
µA
1.65-2.2V
1.65-2.2V
GND ≤
V
In
≤
V
dd
GND ≤
V
out
≤
V
dd
,
Outputs Disabled
Note:
1.
V
Il
(min.) = –0.3V DC; V
Il
(min.) = –2.0V AC (pulse width < 10 ns). Not 100% tested.
V
Ih
(max.) = V
dd
+ 0.3V
dc; V
Ih
(max.) = V
dd
+ 2.0V
Ac (pulse width < 10 ns). Not 100% tested.
Integrated Silicon Solution, Inc. — www.issi.com
Rev. B
12/15/2011
5
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