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NTLUS3A18PZCTAG

Description
Power MOSFET -20V -8.2A 18 mOhm Single P-Channel UDFN6 with ESD Protection
CategoryDiscrete semiconductor    The transistor   
File Size167KB,6 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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NTLUS3A18PZCTAG Overview

Power MOSFET -20V -8.2A 18 mOhm Single P-Channel UDFN6 with ESD Protection

NTLUS3A18PZCTAG Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Objectid1292652207
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time4 weeks
Samacsys DescriptionMOSFET P-CH 20V 8.2A UDFN
Samacsys Manufactureronsemi
Samacsys Modified On2023-03-07 16:10:32
YTEOL0
ConfigurationSINGLE
Maximum drain current (ID)8.2 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Maximum operating temperature150 °C
Peak Reflow Temperature (Celsius)260
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)3.8 W
surface mountYES
Terminal surfaceTIN
Maximum time at peak reflow temperature30
NTLUS3A18PZ
Power MOSFET
Features
−20
V,
−8.2
A, Single P−Channel,
2.0x2.0x0.55 mm UDFN Package
UDFN Package with Exposed Drain Pads for Excellent Thermal
Conduction
Low Profile UDFN 2.0x2.0x0.55 mm for Board Space Saving
Ultra Low R
DS(on)
ESD Diode−Protected Gate
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
www.onsemi.com
MOSFET
V
(BR)DSS
R
DS(on)
MAX
18 mW @
−4.5
V
−20
V
25 mW @
−2.5
V
50 mW @
−1.8
V
90 mW @
−1.5
V
D
−8.2
A
I
D
MAX
Applications
Optimized for Power Management Applications for Portable
Products, such as Cell Phones, Media Tablets, PMP, DSC, GPS, and
Others
Battery Switch
High Side Load Switch
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain
Current (Note 1)
Continuous Drain
Current (Note 1)
Power Dissipa-
tion (Note 1)
Steady
State
t
5s
Steady
State
t
5s
Continuous Drain
Current (Note 2)
Steady
State
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 25°C
T
A
= 25°C
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
tp = 10
ms
P
D
I
DM
T
J
,
T
STG
V
ESD
I
S
T
L
I
D
P
D
Symbol
V
DSS
V
GS
I
D
Value
−20
±8.0
−8.2
−5.9
−12.2
1.7
3.8
−5.1
−3.7
0.7
−25
-55 to
150
2000
−1.7
260
W
A
°C
V
A
°C
A
Pin 1
W
S
D
Unit
V
V
A
G
S
P−Channel MOSFET
MARKING DIAGRAM
1
UDFN6
CASE 517BG
AC MG
G
Power Dissipation (Note 2)
Pulsed Drain Current
Operating Junction and Storage
Temperature
ESD (HBM, JESD22−A114)
AC = Specific Device Code
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
PIN CONNECTIONS
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface-mounted on FR4 board using the minimum recommended pad size
of 30 mm
2
, 2 oz. Cu.
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
©
Semiconductor Components Industries, LLC, 2016
April, 2016
Rev. 4
1
Publication Order Number:
NTLUS3A18PZ/D
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