EMC2DXV5T1G,
EMC3DXV5T1G,
EMC4DXV5T1G,
EMC5DXV5T1G
Dual Common
Base-Collector Bias
Resistor Transistors
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
Q1
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3
R1
2
R2
1
R2
R1
4
Q2
The BRT (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the EMC2DXV5T1G series,
two complementary BRT devices are housed in the SOT−553 package
which is ideal for low power surface mount applications where board
space is at a premium.
Features
5
5
1
SOT−553
CASE 463B
•
•
•
•
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•
These are Pb−Free Devices
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
, − minus sign for Q
1
(PNP) omitted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Symbol
V
CBO
V
CEO
I
C
Value
50
50
100
Unit
Vdc
Vdc
mAdc
MARKING DIAGRAM
Ux M
G
G
Ux = Specific Device Code
x = C, 3, E, or 5
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
©
Semiconductor Components Industries, LLC, 2014
1
May, 2014 − Rev. 7
Publication Order Number:
EMC2DXV5T1/D
EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G
THERMAL CHARACTERISTICS
Characteristic
ONE JUNCTION HEATED
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction-to-Ambient
BOTH JUNCTIONS HEATED
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction-to-Ambient
Junction and Storage Temperature
1. FR−4 @ Minimum Pad
P
D
500 (Note 1)
4.0 (Note 1)
R
qJA
T
J
, T
stg
250 (Note 1)
−55 to +150
mW
mW/°C
°C/W
°C
P
D
357 (Note 1)
2.9 (Note 1)
R
qJA
350 (Note 1)
mW
mW/°C
°C/W
Symbol
Max
Unit
DEVICE ORDERING INFORMATION, MARKING AND RESISTOR VALUES
Transistor 1 − PNP
Device
EMC2DXV5T1G
NSVEMC2DXV5T1G*
EMC3DXV5T1G
EMC3DXV5T5G
EMC4DXV5T1G
EMC5DXV5T1G
U3
UE
U5
10
10
4.7
10
47
10
10
47
47
10
47
47
Marking
UC
UC
R1 (K)
22
22
R2 (K)
22
22
Transistor 2 − NPN
R1 (K)
22
22
R2 (K)
22
22
SOT−553
(Pb−Free)
Package
Shipping
†
4000 / Tape & Reel
4000 / Tape & Reel
4000 / Tape & Reel
8000 / Tape & Reel
4000 / Tape & Reel
4000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
250
PD , POWER DISSIPATION (MILLIWATTS)
200
150
100
R
qJA
= 833°C/W
50
0
- 50
0
50
100
T
A
, AMBIENT TEMPERATURE (°C)
150
Figure 1. Derating Curve
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EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Q1 TRANSISTOR: PNP
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
CB
= 50 V, I
E
= 0)
Collector-Emitter Cutoff Current (V
CB
= 50 V, I
B
= 0)
Emitter-Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
EMC2DXV5T1G
EMC3DXV5T1G
EMC4DXV5T1G
EMC5DXV5T1G
I
CBO
I
CEO
I
EBO
−
−
−
−
−
−
−
−
−
−
−
−
100
500
0.2
0.5
0.2
1.0
nAdc
nAdc
mAdc
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
Collector-Base Breakdown Voltage (I
C
= 10
mA,
I
E
= 0)
Collector-Emitter Breakdown Voltage (I
C
= 2.0 mA, I
B
= 0)
DC Current Gain
(V
CE
= 10 V, I
C
= 5.0 mA)
EMC2DXV5T1G
EMC3DXV5T1G
EMC4DXV5T1G
EMC5DXV5T1G
V
(BR)CBO
V
(BR)CEO
h
FE
50
50
60
35
80
20
−
−
4.9
15.4
7.0
3.3
0.8
0.8
0.17
0.38
−
−
100
60
140
35
−
−
−
22
10
4.7
1.0
1.0
0.21
0.47
−
−
−
−
−
−
0.25
0.2
−
28.6
13
6.1
1.2
1.2
0.25
0.56
Vdc
Vdc
Vdc
kW
Vdc
Vdc
Collector−Emitter Saturation Voltage (I
C
= 10 mA, I
B
= 0.3 mA)
Output Voltage (on) (V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kW)
Output Voltage (off) (V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kW)
Input Resistor
EMC2DXV5T1G
EMC3DXV5T1G, EMC4DXV5T1G
EMC5DXV5T1G
EMC2DXV5T1G
EMC3DXV5T1G
EMC4DXV5T1G
EMC5DXV5T1G
V
CE(SAT)
V
OL
V
OH
R1
Resistor Ratio
R1/R2
Q2 TRANSISTOR: NPN
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
CB
= 50 V, I
E
= 0)
Collector-Emitter Cutoff Current (V
CB
= 50 V, I
B
= 0)
Emitter-Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
ON CHARACTERISTICS
Collector-Base Breakdown Voltage (I
C
= 10
mA,
I
E
= 0)
Collector-Emitter Breakdown Voltage (I
C
= 2.0 mA, I
B
= 0)
DC Current Gain
(V
CE
= 10 V, I
C
= 5.0 mA)
EMC2DXV5T1G
EMC3DXV5T1G
EMC4DXV5T1G, EMC5DXV5T1G
V
(BR)CBO
V
(BR)CEO
h
FE
50
50
60
35
80
−
−
4.9
15.4
7.0
33
0.8
0.8
0.8
−
−
100
60
140
−
−
−
22
10
47
1.0
1.0
1.0
−
−
−
−
−
0.25
0.2
−
28.6
13
61
1.2
1.2
1.2
Vdc
Vdc
Vdc
kW
Vdc
Vdc
EMC2DXV5T1G
EMC3DXV5T1G
EMC4DXV5T1G, EMC5DXV5T1G
I
CBO
I
CEO
I
EBO
−
−
−
−
−
−
−
−
−
−
100
500
0.2
0.5
0.1
nAdc
nAdc
mAdc
Collector−Emitter Saturation Voltage (I
C
= 10 mA, I
B
= 0.3 mA)
Output Voltage (on) (V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kW)
Output Voltage (off) (V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kW)
Input Resistor
EMC2DXV5T1G
EMC3DXV5T1G
EMC4DXV5T1G, EMC5DXV5T1G
EMC2DXV5T1G
EMC3DXV5T1G
EMC4DXV5T1G, EMC5DXV5T1G
V
CE(SAT)
V
OL
V
OH
R1
Resistor Ratio
R1/R2
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G
TYPICAL ELECTRICAL CHARACTERISTICS − EMC2DXV5T1 PNP TRANSISTOR
V
CE(sat)
, COLLECTOR EMITTER SATURATION VOLTAGE (V)
10
I
C
/I
B
= 10
hFE, DC CURRENT GAIN
1000
V
CE
= 10 V
1
T
A
= -25°C
25°C
T
A
= 75°C
25°C
100
-25°C
75°C
0.1
0.01
10
0
20
I
C
, COLLECTOR CURRENT (mA)
40
50
1
10
I
C
, COLLECTOR CURRENT (mA)
100
Figure 2. V
CE(sat)
versus I
C
Figure 3. DC Current Gain
4
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
l
E
= 0 mA
T
A
= 25°C
100
75°C
10
25°C
T
A
= -25°C
Cob , CAPACITANCE (pF)
3
1
2
0.1
1
0.01
0.001
0
1
2
3
4
5
6
7
V
in
, INPUT VOLTAGE (V)
8
V
O
= 5 V
9
10
0
0
10
20
30
40
V
R
, REVERSE BIAS VOLTAGE (V)
50
Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage
100
V
O
= 0.2 V
V in , INPUT VOLTAGE (VOLTS)
T
A
= -25°C
10
75°C
25°C
1
0.1
0
10
20
30
I
C
, COLLECTOR CURRENT (mA)
40
50
Figure 6. Input Voltage versus Output Current
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EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G
TYPICAL ELECTRICAL CHARACTERISTICS − EMC2DXV5T1 NPN TRANSISTOR
V
CE(sat)
, COLLECTOR EMITTER SATURATION VOLTAGE (V)
1
I
C
/I
B
= 10
T
A
= -25°C
hFE, DC CURRENT GAIN
25°C
0.1
75°C
1000
V
CE
= 10 V
T
A
= 75°C
25°C
-25°C
100
0.01
0.001
0
20
40
I
C
, COLLECTOR CURRENT (mA)
50
10
1
10
I
C
, COLLECTOR CURRENT (mA)
100
Figure 7. V
CE(sat)
versus I
C
Figure 8. DC Current Gain
4
f = 1 MHz
I
E
= 0 mA
T
A
= 25°C
100
75°C
IC, COLLECTOR CURRENT (mA)
10
25°C
T
A
= -25°C
Cob , CAPACITANCE (pF)
3
1
2
0.1
1
0.01
V
O
= 5 V
0
1
2
3
4
5
6
7
V
in
, INPUT VOLTAGE (V)
8
9
10
0
0
10
20
30
40
V
R
, REVERSE BIAS VOLTAGE (V)
50
0.001
Figure 9. Output Capacitance
Figure 10. Output Current versus Input Voltage
10
V
O
= 0.2 V
V in , INPUT VOLTAGE (VOLTS)
T
A
= -25°C
25°C
75°C
1
0.1
0
10
20
30
I
C
, COLLECTOR CURRENT (mA)
40
50
Figure 11. Input Voltage versus Output
Current
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