2SD1816T-TL-E datasheet, PDF - EEWORLD Datasheet

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2SD1816T-TL-E: DescriptionBipolar Transistors - BJT HF LOW-NOISE AMPLIFIER; CategoryDiscrete semiconductor The transistor; File Size508KB，8 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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2SD1816T-TL-E Overview

Bipolar Transistors - BJT HF LOW-NOISE AMPLIFIER

2SD1816T-TL-E Parametric

Parameter Name	Attribute value
Brand Name	ON Semiconductor
Is it lead-free?	Lead free
Maker	ON Semiconductor
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	3
Manufacturer packaging code	369AH
Reach Compliance Code	not_compliant
ECCN code	EAR99
Factory Lead Time	4 weeks
Is Samacsys	N
Shell connection	COLLECTOR
Maximum collector current (IC)	4 A
Collector-emitter maximum voltage	100 V
Configuration	SINGLE
Minimum DC current gain (hFE)	200
JEDEC-95 code	TO-252
JESD-30 code	R-PSSO-G2
JESD-609 code	e6
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Maximum power dissipation(Abs)	20 W
surface mount	YES
Terminal surface	Tin/Bismuth (Sn/Bi)
Terminal form	GULL WING
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	180 MHz
Base Number Matches	1

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2SB1216, 2SD1816

Bipolar Transistor

(−)100V, (−)4A, Low VCE(sat),

(PNP)NPN Single

www.onsemi.com

Features

•

Low Collector to Emitter Saturation Voltage

•

Small and Slim Package Facilitating Compactness of Sets

•

High fT

•

Good Linearity of hFE

•

Fast Switching Time

ELECTRICAL CONNECTION

2,4

1 : Base

2 : Collector

3 : Emitter

4 : Collector

Typical Applications

•

Suitable for Relay Drivers

•

High Speed Inverters

•

Converters

•

Other General High Current Switching Applications

SPECIFICATIONS

( ) : 2SB1216

ABSOLUTE MAXIMUM RATING

at Ta = 25°C

(Note 1)

Value

Unit

(−) 120

(−) 100

(−) 6

(−) 4

(−) 8

Collector Dissipation

Tc=25°C

Junction Temperature

150

°C

Storage Temperature

Tstg

−55

to +150

°C

Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage

the device. If any of these limits are exceeded, device functionality should not

be assumed, damage may occur and reliability may be affected.

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Collector Current (Pulse)

Symbol

VCBO

VCEO

VEBO

ICP

2SB1216

2SD1816

MARKING

B1216

RANK

LOT No.

D1816

RANK

LOT No.

IPAK / TP

DPAK / TP-FA

ORDERING INFORMATION

See detailed ordering and shipping

information on page 7 of this data sheet.

Semiconductor Components Industries, LLC, 2016

March 2016 - Rev. 2

Publication Order Number :

2SB1216_2SD1816/D

2SD1816T-TL-E Related Products

	2SD1816T-TL-E	2SD1816S-TL-H	2SB1216T-TL-E	2SB1216S-E	2SD1816T-E	RG1-2183-DB50Q
Description	Bipolar Transistors - BJT HF LOW-NOISE AMPLIFIER	Bipolar Transistors - BJT BIP NPN 4A 100V	Bipolar Transistor, -100V, -4A, Low VCE(sat), PNP Single, DPAK / TP-FA, 700-REEL	USB Cables / IEEE 1394 Cables USB Embedded Serial Conv 3V3 0.1" Hdr	Bipolar Transistors - BJT BIP PNP 2A 100V	Fixed Resistor, Metal Glaze/thick Film, 1W, 218000ohm, 2000V, 0.5% +/-Tol, 50ppm/Cel,
Reach Compliance Code	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
JESD-609 code	e6	e6	e6	e6	e6	e0
Number of terminals	2	2	2	3	3	2
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	155 °C
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	CYLINDRICAL PACKAGE
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	IN-LINE	IN-LINE	Axial
Terminal surface	Tin/Bismuth (Sn/Bi)	Tin/Bismuth (Sn/Bi)	TIN BISMUTH	Tin/Bismuth (Sn/Bi)	Tin/Bismuth (Sn/Bi)	Tin/Lead (Sn/Pb)
Brand Name	ON Semiconductor	ON Semiconductor	ON Semiconductor	ON Semiconductor	ON Semiconductor	-
Is it lead-free?	Lead free	Lead free	Lead free	Lead free	Lead free	-
package instruction	SMALL OUTLINE, R-PSSO-G2	HALOGEN AND LEAD FREE, SC-63, TP-FA, 3/2 PIN	SMALL OUTLINE, R-PSSO-G2	LEAD FREE, SC-64, TP, 3 PIN	IN-LINE, R-PSIP-T3	-
Contacts	3	3	3	3	3	-
Manufacturer packaging code	369AH	369AH	369AH	369AJ	369AJ	-
Factory Lead Time	4 weeks	2 weeks	-	2 weeks	1 week	-
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	-
Maximum collector current (IC)	4 A	4 A	4 A	4 A	4 A	-
Collector-emitter maximum voltage	100 V	100 V	100 V	100 V	100 V	-
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	-
Minimum DC current gain (hFE)	200	140	200	140	200	-
JEDEC-95 code	TO-252	TO-252	TO-252	TO-251	TO-251	-
JESD-30 code	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSIP-T3	R-PSIP-T3	-
Number of components	1	1	1	1	1	-
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-
Polarity/channel type	NPN	NPN	PNP	PNP	NPN	-
Maximum power dissipation(Abs)	20 W	20 W	20 W	20 W	20 W	-
surface mount	YES	YES	YES	NO	NO	-
Terminal form	GULL WING	GULL WING	GULL WING	THROUGH-HOLE	THROUGH-HOLE	-
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	-
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	-
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON	-
Nominal transition frequency (fT)	180 MHz	180 MHz	130 MHz	130 MHz	180 MHz	-
Base Number Matches	1	1	-	1	1	-

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