BSS123TC datasheet, PDF - EEWORLD Datasheet

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BSS123TC: DescriptionMOSFET N-Chnl 100V; Categorysemiconductor Discrete semiconductor; File Size44KB，1 Pages; ManufacturerDiodes; Websitehttp://www.diodes.com/

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BSS123TC Overview

MOSFET N-Chnl 100V

BSS123TC Parametric

Parameter Name	Attribute value
Product Category	MOSFET
Manufacturer	Diodes
RoHS	Details
Technology	Si
Mounting Style	SMD/SMT
Package / Case	SOT-23-3
Number of Channels	1 Channel
Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	100 V
Id - Continuous Drain Current	170 mA
Rds On - Drain-Source Resistance	6 Ohms
Vgs - Gate-Source Voltage	20 V
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Configuration	Single
Channel Mode	Enhancement
Packaging	Cut Tape
Packaging	MouseReel
Packaging	Reel
Fall Time	10 ns
Height	1 mm
Length	2.9 mm
Pd - Power Dissipation	360 mW
Product	MOSFET Small Signal
Rise Time	10 ns
Factory Pack Quantity	10000
Transistor Type	1 N-Channel
Type	FET
Typical Turn-Off Delay Time	15 ns
Typical Turn-On Delay Time	10 ns
Width	1.3 mm
Unit Weight	0.000282 oz

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SOT23 N-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

ISSUE 3 – JANUARY 1996

PARTMARKING DETAIL

7

– SA

BSS123

S

D

G

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Drain-Source Voltage

Drain-Gate Voltage

Continuous Drain Current at T

amb

=25°C

Pulsed Drain Current

Gate-Source Voltage

Peak Gate-Source Voltage

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

V

DS

V

DGR

I

D

I

DM

V

GS

V

GSM

P

tot

T

j

:T

stg

MIN.

VALUE

100

170

680

±

20

±

20

360

-55 to +150

SOT23

UNIT

V

mA

V

mW

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

Drain-Source

Breakdown Voltage

Gate-Source Threshold

Voltage

Gate-Body Leakage

Zero Gate Voltage

Drain Current

Static Drain-Source

On-State Resistance (1)

Forward

Transconductance(1)(2)

Input Capacitance (2)

Common Source

Output Capacitance (2)

Reverse Transfer

Capacitance (2)

Turn-On Delay Time (2)(3)

Rise Time (2)(3)

Turn-Off Delay Time (2)(3)

Fall Time (2)(3)

SYMBOL MIN.

BV

DSS

100

V

GS(th)

I

GSS

I

DSS

0.8

MAX. UNIT CONDITIONS.

V

I

D

=0.25mA, V

GS

=0V

2.8

50

15

60

10

6

V

nA

µA

nA

Ω

mS

20

9

4

10

15

25

pF

ns

I

D

=1mA, V

DS

= V

GS

V

GS

=± 20V, V

DS

=0V

V

DS

=100V, V

GS

=0V

V

DS

=100V, V

GS

=0V, T=125°C

(2)

V

DS

=20V, V

GS

=0V

V

GS

=10V, I

D

=100mA

V

DS

=25V, I

D

=100mA

2.2

10

1

2

5

R

DS(on)

g

fs

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

80

120

V

DS

=25V, V

GS

=0V, f=1MHz

V

DD

≈30V,

I

D

=280mA

(1) Measured under pulsed conditions. Width=300µs. Duty cycle

≤2%

(2) Sample test.

(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator

For typical characteristics graphs see ZVN3310F datasheet.

3 - 70

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