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BLF8G24L-200P112

Description
RF MOSFET Transistors 2.35GHz 68V 16.5dB
Categorysemiconductor    Discrete semiconductor   
File Size1MB,13 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BLF8G24L-200P112 Overview

RF MOSFET Transistors 2.35GHz 68V 16.5dB

BLF8G24L-200P112 Parametric

Parameter NameAttribute value
Product CategoryRF MOSFET Transistors
ManufacturerNXP
RoHSDetails
Id - Continuous Drain Current1.74 A
Vds - Drain-Source Breakdown Voltage65 V
Rds On - Drain-Source Resistance100 mOhms
TechnologySi
Gain16.5 dB
Output Power200 W
Mounting StyleSMD/SMT
Package / CaseSOT-539A-5
PackagingTube
Operating Frequency2.3 GHz to 2.4 GHz
Factory Pack Quantity60
TypeRF Power MOSFET
Vgs - Gate-Source Voltage13 V
BLF8G24L-200P;
BLF8G24LS-200P
Power LDMOS transistor
Rev. 4 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
200 W LDMOS power transistor for base station applications at frequencies from
2300 MHz to 2400 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in a common source class-AB production test circuit.
Test signal
1-carrier W-CDMA
[1]
f
(MHz)
2300 to 2400
I
Dq
(mA)
1740
V
DS
(V)
28
P
L(AV)
(W)
60
G
p
(dB)
17.2
D
(%)
32
ACPR
5M
(dBc)
37
[1]
Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low R
th
providing excellent thermal stability
Designed for broadband operation (2300 MHz to 2400 MHz)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for base stations and multi carrier applications in the 2300 MHz to
2400 MHz frequency range

BLF8G24L-200P112 Related Products

BLF8G24L-200P112 BLF8G24LS-200P118 BLF8G24L-200P118 BLF8G24LS-200P112
Description RF MOSFET Transistors 2.35GHz 68V 16.5dB RF MOSFET Transistors 2.35GHz 68V 16.5dB RF MOSFET Transistors 2.35GHz 68V 16.5dB RF MOSFET Transistors 2.35GHz 68V 16.5dB
Product Category RF MOSFET Transistors RF MOSFET Transistors RF MOSFET Transistors RF MOSFET Transistors
Manufacturer NXP NXP NXP NXP
RoHS Details Details Details Details
Id - Continuous Drain Current 1.74 A 1.74 A 1.74 A 1.74 A
Vds - Drain-Source Breakdown Voltage 65 V 65 V 65 V 65 V
Rds On - Drain-Source Resistance 100 mOhms 100 mOhms 100 mOhms 100 mOhms
Technology Si Si Si Si
Gain 16.5 dB 16.5 dB 16.5 dB 16.5 dB
Output Power 200 W 200 W 200 W 200 W
Mounting Style SMD/SMT SMD/SMT SMD/SMT SMD/SMT
Package / Case SOT-539A-5 SOT-539B-3 SOT-539A-5 SOT-539B-3
Operating Frequency 2.3 GHz to 2.4 GHz 2.3 GHz to 2.4 GHz 2.3 GHz to 2.4 GHz 2.3 GHz to 2.4 GHz
Factory Pack Quantity 60 100 100 60
Type RF Power MOSFET RF Power MOSFET RF Power MOSFET RF Power MOSFET
Vgs - Gate-Source Voltage 13 V 13 V 13 V 13 V
Packaging Tube Reel Reel Tube
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