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Datasheet> All Categories > Discrete semiconductor> diode> BR62
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BR62

Description
8-bit Microcontrollers - MCU 32KB In-system Flash 20MHz 1.8V-5.5V
CategoryDiscrete semiconductor    diode   
File Size282KB，4 Pages
ManufacturerGeneSiC
Websitehttp://www.genesicsemi.com/
Environmental Compliance
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BR62 Overview

8-bit Microcontrollers - MCU 32KB In-system Flash 20MHz 1.8V-5.5V

BR62 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerGeneSiC
package instructionS-PUFM-W4
Reach Compliance Codecompliant
Minimum breakdown voltage200 V
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
JESD-30 codeS-PUFM-W4
Maximum non-repetitive peak forward current125 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature125 °C
Minimum operating temperature-65 °C
Maximum output current6 A
Package body materialPLASTIC/EPOXY
Package shapeSQUARE
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage200 V
surface mountNO
Terminal formWIRE
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED

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BR605 thru BR64
Single Phase Silicon
Bridge Rectifier
Features
• Low forward voltage drop
• Low leakage current
• Types from 50 V up to 400 V V
RRM
• Not ESD Sensitive
BR-6 Package
V
RRM
= 50 V - 400 V
I
O
= 6 A
Mechanical Data
Case: Molded plastic body
Mounting: Hole thru for #6 screw
Mounting position: Any
Lead: As marked
Maximum ratings at Tc = 25 °C, unless otherwise specified
Parameter
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
Symbol
V
RRM
V
RMS
V
DC
T
j
T
stg
Conditions
BR605
50
35
50
-65 to 125
-65 to 150
BR61
100
70
100
-65 to 125
-65 to 150
BR62
200
140
200
-65 to 125
-65 to 150
BR64
400
280
400
-65 to 125
-65 to 150
Unit
V
V
V
°C
°C
Electrical characteristics at Tc = 25 °C, unless otherwise specified
Single phase, half sine wave, 60 Hz, resistive or inductive load
For capacitive load derate current by 20%
Parameter
Maximum average forward
rectified current
Peak forward surge current
Maximum instantaneous
forward voltage drop per bridge
element
Maximum DC reverse current at
rated DC blocking voltage
Symbol
I
O
I
FSM
V
F
I
R
Conditions
T
c
= 75 °C
t
p
= 8.3 ms, half sine
I
F
= 3.0 A
T
a
= 25 °C
T
a
= 100 °C
BR605
6.0
200
1.0
10
200
BR61
6.0
200
1.0
10
200
BR62
6.0
200
1.0
10
200
BR64
6.0
200
1.0
10
200
Unit
A
A
V
μA
Apr 2016
Latest version of this datasheet at: www.genesicsemi.com/silicon-products/bridge-rectifiers/
1

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