Ordering number : EN8998C
FW344A
Power MOSFET
30V, 4.5A, 64m
Ω
, –30V, –3.5A, 102m
Ω
, Complementary Dual SOIC8
Features
•
http://onsemi.com
•
•
•
ON-resistance Nch : RDS(on)1=49m
Ω
(typ.)
Pch : RDS(on)1=78m
Ω
(typ.)
4V drive
Halogen free compliance
Nch+Pch MOSFET
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW≤10μs)
Drain Current (PW≤10μs)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
IDP
PD
PT
Tch
Tstg
Duty cycle≤1%
Duty cycle≤1%
When mounted on ceramic substrate (2000mm
×0.8mm)
1unit
When mounted on ceramic substrate (2000mm
×0.8mm)
2
2
Conditions
N-channel
30
±20
4.5
5
18
1.4
1.7
150
P-channel
--30
±20
--3.5
--4
-
-14
Unit
V
V
A
A
A
W
W
°C
°C
-
-55 to +150
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
*
Machine Model
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7072-001
4.9
8
5
0.22
Product & Package Information
• Package
: SOIC8
• JEITA, JEDEC
: SC-87, SOT-96
• Minimum Packing Quantity : 2,500 pcs./reel
FW344A-TL-2W
Packing Type : TL
Marking
1
1.27
4
0.445
0.254
(GAGE PLANE)
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SOIC8
TL
FW344
A
LOT No.
7
6
5
6.0
3.9
0.375
0.715
Electrical Connection
8
1.375
0.175
1.55
1
2
3
4
Semiconductor Components Industries, LLC, 2013
July, 2013
91212 TKIM/62712 TKIM/31412 TKIM/22212PA TKIM TC-00002693 No.8998-1/9
FW344A
Electrical Characteristics
at Ta=25°C
Parameter
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[P-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
|
yfs
|
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS=--3.5A, VGS=0V
VDS=--10V, VGS=--10V, ID=--3.5A
See specified Test Circuit.
VDS=--10V, f=1MHz
ID=--1mA, VGS=0V
VDS=--30V, VGS=0V
VGS=±16V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--3.5A
ID=--3.5A, VGS=--10V
ID=--2A, VGS=--4.5V
ID=--2A, VGS=--4V
--1.2
3.9
78
125
145
250
65
46
5.4
34
28
24
5
1
1.2
-
-0.88
-
-1.5
102
175
205
--30
--1
±10
--2.3
V
μA
μA
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
V(BR)DSS
IDSS
IGSS
VGS(off)
|
yfs
|
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS=4.5A, VGS=0V
VDS=10V, VGS=10V, ID=4.5A
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=4.5A
ID=4.5A, VGS=10V
ID=2A, VGS=4.5V
ID=2A, VGS=4V
VDS=10V, f=1MHz
30
1
±10
1.2
2.6
49
80
100
280
60
30
6
See specified Test Circuit.
21
20
10
5.6
1.2
0.8
0.85
1.2
64
112
140
2.6
V
μA
μA
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Symbol
Conditions
Ratings
min
typ
max
Unit
No.8998-2/9
FW344A
Switching Time Test Circuit
[N-channel]
VIN
VDD=15V
[P-channel]
VIN
VDD= --15V
10V
0V
0V
--10V
VIN
PW=10μs
D.C.≤1%
G
D
ID=4.5A
RL=3.3Ω
VOUT
PW=10μs
D.C.≤1%
VIN
D
ID= --3.5A
RL=4.3Ω
VOUT
G
P.G
FW344A
50Ω
S
P.G
FW344A
50Ω
S
Ordering Information
Device
FW344A-TL-2W
Package
SOIC8
Shipping
2,500pcs./reel
memo
Pb Free and Halogen Free
4.5
ID -- VDS
10.0V
8.0V
[Nch]
9
8
7
ID -- VGS
VDS=10V
[Nch]
4.5V
6.0V
4.0
3.5
4.0
V
Drain Current, ID -- A
3.0
2.5
2.0
1.5
1.0
0.5
0
0
Drain Current, ID -- A
6
5
4
2
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
0
0.5
1.0
1.5
2.0
25
2.5
1
Ta=
75
°
--2
C
5
°
C
3.0
4.0
VGS=3.0V
3
°
C
3.5
4.5
5.0
Drain-to-Source Voltage, VDS -- V
300
RDS(on) -- VGS
IT16697
Gate-to-Source Voltage, VGS -- V
200
[Nch]
Ta=25
°
C
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
RDS(on) -- Ta
IT16698
[Nch]
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
250
ID=2.0A
4.5A
150
200
150
100
100
50
.0A
I =2
.0V, D
=4
A
VGS
=2.0
V, I D
=4.5
VGS
.5A
, I =4
10.0V D
V GS=
50
0
0
2
4
6
8
10
IT16699
0
--60
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
Ambient Temperature, Ta --
°
C
IT16700
No.8998-3/9
FW344A
10
|
y
fs
|
-- ID
[Nch]
VDS=10V
Forward Transfer Admittance,
|
y
fs
|
-- S
7
5
10
7
5
3
2
1.0
7
5
IS -- VSD
[Nch]
VGS=0V
2
C
25
°
5
°
C
--2
=
Source Current, IS -- A
3
1.0
7
5
3
2
0.1
0.01
°
C
75
0.1
7
5
3
2
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Drain Current, ID -- A
100
7
SW Time -- ID
5 7 10
IT16701
0.01
0
0.2
0.4
Ta=
7
Ta
3
2
0.6
25
°
C
--25
°
C
0.8
5
°
C
1.0
1.2
IT16702
Switching Time, SW Time -- ns
5
3
2
[Nch]
VDD=15V
VGS=10V
Ciss, Coss, Crss -- pF
1000
7
5
3
2
Ciss, Coss, Crss -- VDS
Diode Forward Voltage, VSD -- V
[Nch]
f=1MHz
td(off)
Ciss
10
7
5
3
2
1.0
0.1
td(on)
tf
100
7
5
3
2
10
Coss
Crss
tr
2
3
5
7
1.0
2
3
5
Drain Current, ID -- A
10
9
VGS -- Qg
10
IT16703
7
0
10
20
30
IT16704
Drain-to-Source Voltage, VDS -- V
100
7
5
3
2
[Nch]
ASO
[Nch]
Gate-to-Source Voltage, VGS -- V
VDS=10V
ID=4.5A
Drain Current, ID -- A
8
7
6
5
4
3
2
1
0
0
1
2
3
4
5
6
IT16705
IDP=18A (PW
≤
10
μs)
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
10
ID=4.5A
1
10
0ms
0m
s
10
s
1m
0
μ
s
s
DC
op
er
0.01
0.01
Operation in this
area is limited by RDS(on).
Ta=25°C
Single pulse
1unit
When mounted on ceramic substrate (2000mm
2
×0.8mm)
2 3
5 7 0.1
2 3
5 7 1.0
2 3
5 7 10
2 3
ati
on
Total Gate Charge, Qg -- nC
--3.5
ID -- VDS
Drain-to-Source Voltage, VDS -- V
--7
[Pch]
ID -- VGS
5 7 100
IT16749
[Pch]
0V
--8.0V
--3.0
--6.
0V
--4
.5V
--4
.0V
VDS= --10V
--6
Drain Current, ID -- A
--2.0
--1.5
--1.0
--0.5
0
--10
.
--2.5
Drain Current, ID -- A
--5
--4
--3
--2
--1
0
--3.0V
0
--0.1
--0.2
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
--0.9
--1.0
0
--0.5
--1.0
--1.5
25
--2.0
VGS= --2.5V
--2
Ta=
5
°
75
°
C
C
--2.5
--3.0
°
C
--3.5
--4.0
Drain-to-Source Voltage, VDS -- V
IT16750
Gate-to-Source Voltage, VGS -- V
IT16751
No.8998-4/9
FW344A
300
RDS(on) -- VGS
ID= --2A
--3.5A
[Pch]
Ta=25
°
C
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
300
RDS(on) -- Ta
[Pch]
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
250
250
200
200
150
150
=
VGS
= --2
V, I D
--4.0
.0A
.0A
A
100
100
50
50
3.5
, I D= --
--10.0V
V GS=
=
VGS
--2
I =
.5V, D
--4
0
0
--2
--4
--6
--8
--10
IT16752
0
--60
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
10
|
y
fs
|
-- ID
Ambient Temperature, Ta --
°
C
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
[Pch]
VDS= --10V
IS -- VSD
IT16753
[Pch]
VGS=0V
Forward Transfer Admittance,
|
y
fs
|
-- S
7
5
2
1.0
7
5
3
2
0.1
--0.01
°
C
25
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
Drain Current, ID -- A
100
7
SW Time -- ID
5 7 --10
IT16754
--0.01
0
--0.2
--0.4
Ta=7
5
°
C
25
°
C
--0.6
--25
°
C
--0.8
C
5
°
--2
=
°
C
Ta
75
Source Current, IS -- A
3
--1.0
--1.2
IT16755
Switching Time, SW Time -- ns
5
3
2
[Pch]
VDD= --15V
VGS= --10V
Ciss, Coss, Crss -- pF
1000
7
5
3
2
Ciss, Coss, Crss -- VDS
Diode Forward Voltage, VSD -- V
[Pch]
f=1MHz
td(off)
tf
Ciss
10
7
5
3
2
1.0
--0.1
100
7
5
3
2
10
td(on)
tr
Coss
Crss
2
3
5
7
--1.0
2
3
5
7
--10
0
--5
--10
--15
--20
--25
--30
IT13192
Drain Current, ID -- A
--10
--9
VGS -- Qg
IT16756
Drain-to-Source Voltage, VDS -- V
--100
7
5
3
2
[Pch]
ASO
[Pch]
Gate-to-Source Voltage, VGS -- V
VDS= --10V
ID= --3.5A
--8
--7
--6
--5
--4
--3
--2
--1
0
0
1
2
3
4
5
6
IT16757
IDP= --14A(PW≤10μs)
ID= --3.5A
DC
Drain Current, ID -- A
--10
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
op
10
1m
0
μ
s
10
s
m
10
s
0m
s
10
s
era
Operation in this area
tion
is limited by RDS(on).
Ta=25°C
Single pulse
1unit
When mounted on ceramic substrate (2000mm
2
×0.8mm)
5 7--0.1
2 3
5 7--1.0
2 3
5 7--10
2 3
--0.01
--0.01 2 3
Total Gate Charge, Qg -- nC
Drain-to-Source Voltage, VDS -- V
5 7
--100
IT16758
No.8998-5/9
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