PHP23NQ11T
N-channel TrenchMOS standard level FET
Rev. 02 — 25 February 2010
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Higher operating power due to low
thermal resistance
Low conduction losses due to low
on-state resistance
1.3 Applications
DC-to-DC convertors
Switched-mode power supplies
1.4 Quick reference data
Table 1.
V
DS
I
D
P
tot
Quick reference
Conditions
T
mb
= 25 °C; V
GS
= 10 V;
see
Figure 1
and
3
T
mb
= 25 °C; see
Figure 2
Min
-
-
-
Typ
-
-
-
Max
110
23
100
Unit
V
A
W
drain-source voltage T
j
≥
25 °C; T
j
≤
175 °C
drain current
total power
dissipation
gate-drain charge
Symbol Parameter
Dynamic characteristics
Q
GD
V
GS
= 10 V; I
D
= 23 A;
V
DS
= 80 V; T
j
= 25 °C;
see
Figure 11
V
GS
= 10 V; I
D
= 13 A; T
j
= 25 °C;
see
Figure 9
and
10
-
10
-
nC
Static characteristics
R
DSon
drain-source
on-state resistance
-
49
70
mΩ
NXP Semiconductors
PHP23NQ11T
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol
G
D
S
D
Description
gate
drain
source
mounting base; connected to
drain
mb
D
Simplified outline
Graphic symbol
G
mbb076
S
1 2 3
SOT78 (TO-220AB)
3. Ordering information
Table 3.
Ordering information
Package
Name
PHP23NQ11T
TO-220AB
Description
Version
plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead SOT78
TO-220AB
Type number
4. Limiting values
Table 4.
Symbol
V
DS
V
DGR
V
GS
I
D
I
DM
P
tot
T
stg
T
j
I
S
I
SM
E
DS(AL)S
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
T
mb
= 25 °C
t
p
≤
10 µs; pulsed; T
mb
= 25 °C
V
GS
= 10 V; T
mb
= 100 °C; see
Figure 1
V
GS
= 10 V; T
mb
= 25 °C; see
Figure 1
and
3
t
p
≤
10 µs; pulsed; T
mb
= 25 °C; see
Figure 3
T
mb
= 25 °C; see
Figure 2
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
T
j
≥
25 °C; T
j
≤
175 °C; R
GS
= 20 kΩ
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
Max
110
110
20
16
23
92
100
175
175
23
92
93
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
In accordance with the Absolute Maximum Rating System (IEC 60134).
Source-drain diode
Avalanche ruggedness
non-repetitive
V
GS
= 10 V; T
j(init)
= 25 °C; I
D
= 14 A; V
sup
≤
100 V;
drain-source avalanche unclamped; t
p
= 0.1 ms; R
GS
= 50
Ω
energy
All information provided in this document is subject to legal disclaimers.
PHP23NQ11T_2
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 25 February 2010
2 of 13
NXP Semiconductors
PHP23NQ11T
N-channel TrenchMOS standard level FET
120
I
der
(%)
80
03aa24
120
P
der
(%)
80
03aa16
40
40
0
0
50
100
150
T
mb
(°C)
200
0
0
50
100
150
T
mb
(°C)
200
Fig 1.
Normalized continuous drain current as a
function of mounting base temperature
10
2
Limit R
DSon
= V
DS
/I
D
I
D
(A)
10
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
03ao51
t
p
= 10
μs
100
μs
DC
1 ms
10 ms
100 ms
1
10
−1
1
10
10
2
V
DS
(V)
10
3
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PHP23NQ11T_2
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 25 February 2010
3 of 13
NXP Semiconductors
PHP23NQ11T
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
Conditions
see
Figure 4
Min
-
-
Typ
-
60
Max
1.5
-
Unit
K/W
K/W
thermal resistance from junction to ambient vertical in still air
10
Z
th(j-mb)
(K/W)
1
03ao50
δ
= 0.5
0.2
0.1
δ
=
t
p
T
10
−1
0.05
0.02
single pulse
P
t
p
t
T
10
−2
10
−6
10
−5
10
−4
10
−3
10
−2
10
−1
t
p
(s)
1
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration
PHP23NQ11T_2
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 25 February 2010
4 of 13
NXP Semiconductors
PHP23NQ11T
N-channel TrenchMOS standard level FET
6. Characteristics
Table 6.
Symbol
V
(BR)DSS
V
GS(th)
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
Conditions
I
D
= 250 µA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 250 µA; V
GS
= 0 V; T
j
= -55 °C
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25 °C; see
Figure 7
and
8
I
D
= 1 mA; V
DS
= V
GS
; T
j
= -55 °C; see
Figure 7
and
8
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 175 °C; see
Figure 7
and
8
I
DSS
I
GSS
R
DSon
drain leakage current
gate leakage current
drain-source on-state
resistance
V
DS
= 100 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= 100 V; V
GS
= 0 V; T
j
= 175 °C
V
GS
= 10 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -10 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= 10 V; I
D
= 13 A; T
j
= 175 °C;
see
Figure 9
and
10
V
GS
= 10 V; I
D
= 13 A; T
j
= 25 °C; see
Figure 9
and
10
Dynamic characteristics
Q
G(tot)
Q
GS
Q
GD
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
SD
t
rr
Q
r
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
reverse recovery time
recovered charge
I
S
= 11 A; V
GS
= 0 V; T
j
= 25 °C; see
Figure 13
I
S
= 11 A; dI
S
/dt = -100 A/µs; V
GS
= 0 V;
V
DS
= 25 V; T
j
= 25 °C
V
DS
= 50 V; R
L
= 2.2
Ω;
V
GS
= 10 V;
R
G(ext)
= 5.6
Ω;
T
j
= 25 °C
V
DS
= 25 V; V
GS
= 0 V; f = 1 MHz; T
j
= 25 °C;
see
Figure 12
I
D
= 23 A; V
DS
= 80 V; V
GS
= 10 V; T
j
= 25 °C;
see
Figure 11
-
-
-
-
-
-
-
-
-
-
-
-
-
22
5
10
830
140
85
8
39
26
24
0.9
64
120
-
-
-
-
-
-
-
-
-
-
1.5
-
-
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
ns
nC
Min
110
99
2
-
1
-
-
-
-
-
-
Typ
-
-
3
-
-
-
-
10
10
132
49
Max
-
-
4
4.4
-
10
500
100
100
189
70
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
Static characteristics
Source-drain diode
PHP23NQ11T_2
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 25 February 2010
5 of 13
京公网安备 11010802033920号
EEWORLD
