IRF153 datasheet, PDF - EEWORLD Datasheet

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IRF153: DescriptionTRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,33A I(D),TO-204AE; Categorysemiconductor Discrete semiconductor; File Size46KB，1 Pages; ManufacturerIXYS ( Littelfuse ); Websitehttp://www.ixys.com/

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IRF153 Overview

TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,33A I(D),TO-204AE

IRF153 Parametric

Parameter Name	Attribute value
state	Transferred
structure	Single
drain_current_max__abs___id_	33 A
field effect transistor technology	METAL-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 Cel
larity_channel_type	N-CHANNEL
wer_dissipation_max__abs_	150 W
sub_category	FET General Purpose Powe
surface mount	NO

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IRF153 Related Products

	IRF153	IRF150	IRF151	IRF152	IRFC150	IRFP150	IRFP152	IRFP151	IRFP153
Description	TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,33A I(D),TO-204AE	38 A, 100 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE	38 A, 100 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE	38 A, 100 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE	38 A, 100 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE	40 A, 100 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247	38 A, 100 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE	38 A, 100 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE	38 A, 100 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
state	Transferred	ACTIVE	ACTIVE	ACTIVE	ACTIVE	-	ACTIVE	ACTIVE	ACTIVE
structure	Single	Single WITH BUILT-IN diode	Single WITH BUILT-IN diode	Single WITH BUILT-IN diode	Single WITH BUILT-IN diode	-	Single WITH BUILT-IN diode	Single WITH BUILT-IN diode	Single WITH BUILT-IN diode
field effect transistor technology	METAL-OXIDE SEMICONDUCTOR	Metal-OXIDE SEMICONDUCTOR	Metal-OXIDE SEMICONDUCTOR	Metal-OXIDE SEMICONDUCTOR	Metal-OXIDE SEMICONDUCTOR	-	Metal-OXIDE SEMICONDUCTOR	Metal-OXIDE SEMICONDUCTOR	Metal-OXIDE SEMICONDUCTOR
operating mode	ENHANCEMENT MODE	ENHANCEMENT	ENHANCEMENT	ENHANCEMENT	ENHANCEMENT	-	ENHANCEMENT	ENHANCEMENT	ENHANCEMENT
Number of terminals	-	2	2	2	2	-	2	2	2
Minimum breakdown voltage	-	100 V	100 V	100 V	100 V	-	100 V	100 V	100 V
Processing package description	-	HERMETIC SEALED, MODIFIED TO-3, 2 PIN	HERMETIC SEALED, MODIFIED TO-3, 2 PIN	HERMETIC SEALED, MODIFIED TO-3, 2 PIN	HERMETIC SEALED, MODIFIED TO-3, 2 PIN	-	HERMETIC SEALED, MODIFIED TO-3, 2 PIN	HERMETIC SEALED, MODIFIED TO-3, 2 PIN	HERMETIC SEALED, MODIFIED TO-3, 2 PIN
packaging shape	-	round	round	round	round	-	round	round	round
Package Size	-	Flange mounting	Flange mounting	Flange mounting	Flange mounting	-	Flange mounting	Flange mounting	Flange mounting
Terminal form	-	PIN/PEG	PIN/PEG	PIN/PEG	PIN/PEG	-	PIN/PEG	PIN/PEG	PIN/PEG
terminal coating	-	tin lead	tin lead	tin lead	tin lead	-	tin lead	tin lead	tin lead
Terminal location	-	BOTTOM	BOTTOM	BOTTOM	BOTTOM	-	BOTTOM	BOTTOM	BOTTOM
Packaging Materials	-	Metal	Metal	Metal	Metal	-	Metal	Metal	Metal
Shell connection	-	DRAIN	DRAIN	DRAIN	DRAIN	-	DRAIN	DRAIN	DRAIN
Number of components	-	1	1	1	1	-	1	1	1
transistor applications	-	switch	switch	switch	switch	-	switch	switch	switch
Transistor component materials	-	silicon	silicon	silicon	silicon	-	silicon	silicon	silicon
Channel type	-	N channel	N channel	N channel	N channel	-	N channel	N channel	N channel
Transistor type	-	universal power supply	universal power supply	universal power supply	universal power supply	-	universal power supply	universal power supply	universal power supply
Maximum leakage current	-	38 A	38 A	38 A	38 A	-	38 A	38 A	38 A
Rated avalanche energy	-	150 mJ	150 mJ	150 mJ	150 mJ	-	150 mJ	150 mJ	150 mJ
Maximum drain on-resistance	-	0.0650 ohm	0.0650 ohm	0.0650 ohm	0.0650 ohm	-	0.0650 ohm	0.0650 ohm	0.0650 ohm
Maximum leakage current pulse	-	152 A	152 A	152 A	152 A	-	152 A	152 A	152 A

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