SIPMOS® Power Transistor
Features
•
N channel
•
SPD 07N20
G
V
DS
200
Product Summary
Drain source voltage
V
Enhancement mode
Drain-Source on-state resistance
R
DS(on)
0.4
Ω
•
Avalanche rated
•
dv/dt rated
Continuous drain current
I
D
7
A
2
1
2
3
1
3
Type
Package
Pb-free
Packaging
Pin 1
Pin 2
Pin 3
SPD07N20
G
PG-TO252
Yes
Tape and Reel
G
D
S
SPU07N20
G
PG-TO251
Yes
Tube
Maximum Ratings,
at
Tj
= 25 ˚C, unless otherwise specified
Symbol
Parameter
Value
Unit
Continuous drain current
I
D
7
4.5
A
T
C
= 25 ˚C
T
C
= 100 ˚C
Pulsed drain current
I
Dpulse
28
T
C
= 25 ˚C
Avalanche energy, single pulse
E
AS
120
mJ
I
D
= 7 A,
V
DD
= 50 V,
R
GS
= 25
Ω
Avalanche energy, periodic limited by
T
jmax
Reverse diode dv/dt
E
AR
dv/dt
4
6
kV/µs
I
S
= 7 A,
V
DS
= 160 V, di/dt = 200 A/µs,
T
jmax
= 175 ˚C
Gate source voltage
Power dissipation
V
GS
P
tot
T
j ,
T
stg
±20
V
40
-55... +175
W
˚C
T
C
= 25 ˚C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
55/150/56
Rev. 2.5
Page 1
2013-06-27
SPD 07N20
G
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - case
R
thJC
-
3.1
K/W
Thermal resistance, junction - ambient, leded
R
thJA
-
-
100
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
R
thJA
-
-
-
-
75
50
Electrical Characteristics,
at
T
j = 25 ˚C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain- source breakdown voltage
V
(BR)DSS
200
-
-
V
V
GS
= 0 V,
I
D
= 0.25 mA
Gate threshold voltage,
V
GS
=
V
DS
V
GS(th)
2.1
3
4
I
D
= 1 mA
Zero gate voltage drain current
I
DSS
-
-
-
µA
V
DS
= 200 V,
V
GS
= 0 V,
T
j
= 25 ˚C
V
DS
= 200 V,
V
GS
= 0 V,
T
j
= 125 ˚C
Gate-source leakage current
0.1
-
10
1
100
100
nA
Ω
I
GSS
R
DS(on)
V
GS
= 20 V,
V
DS
= 0 V
Drain-Source on-state resistance
V
GS
= 10 V,
I
D
= 4.5 A
-
0.3
0.4
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air.
Rev. 2.5
Page 2
2013-06-27
SPD 07N20
G
Electrical Characteristics,
at
T
j = 25 ˚C, unless otherwise specified
Values
Symbol
Parameter
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
g
fs
3
4.2
-
S
V
DS
≥2*
I
D
*R
DS(on)max
,
I
D
= 4.5 A
Input capacitance
C
iss
-
400
530
pF
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Output capacitance
C
oss
-
85
130
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Reverse transfer capacitance
C
rss
-
45
70
V
GS
= 0 V,
V
DS
= 25 V,
f
= 1 MHz
Turn-on delay time
t
d(on)
-
10
15
ns
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 3 A,
R
G
= 50
Ω
Rise time
t
r
-
40
60
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 3 A,
R
G
= 50
Ω
Turn-off delay time
t
d(off)
-
55
75
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 3 A,
R
G
= 50
Ω
Fall time
t
f
-
30
40
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 3 A,
R
G
= 50
Ω
Rev. 2.5
Page 3
2013-06-27
SPD 07N20
G
Electrical Characteristics,
at
T
j = 25 ˚C, unless otherwise specified
Values
Symbol
Parameter
Unit
min.
typ.
max.
Dynamic Characteristics
Gate to source charge
Q
gs
-
5
7.5
nC
V
DD
= 160 V,
I
D
= 7 A
Gate to drain charge
Q
gd
-
10
22.5
V
DD
= 160 V,
I
D
= 7 A
Gate charge total
Q
g
-
21
31.5
V
DD
= 160 V,
I
D
= 7 A,
V
GS
= 0 to 10 V
Gate plateau voltage
V
(plateau)
-
7
-
V
V
DD
= 160 V,
I
D
= 7 A
Reverse Diode
Inverse diode continuous forward current
I
S
-
-
7
A
T
C
= 25 ˚C
Inverse diode direct current,pulsed
I
SM
-
-
28
T
C
= 25 ˚C
Inverse diode forward voltage
V
SD
-
1.3
1.7
300
0.9
V
ns
V
GS
= 0 V,
I
F
= 14 A
Reverse recovery time
t
rr
Q
rr
-
-
200
0.6
V
R
= 100 V,
I
F
=I
S
, di
F
/dt = 100 A/µs
Reverse recovery charge
µC
V
R
= 100 V,
I
F=
l
S
, di
F
/dt = 100 A/µs
Rev. 2.5
Page 4
2013-06-27
SPD 07N20
G
Power Dissipation
Drain current
P
tot
=
f
(T
C
)
SPD07N20
I
D
=
f
(T
C
)
parameter:
V
GS
≥
10 V
SPD07N20
45
W
7.5
A
35
30
6.0
5.5
P
tot
5.0
I
D
25
20
15
10
5
0
0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
20
40
60
80
100
120
˚C
160
0.0
0
20
40
60
80
100
120
˚C
160
T
C
T
C
Safe operating area
Transient thermal impedance
I
D
=
f
(V
DS
)
parameter :
D
= 0 ,
T
C
= 25 ˚C
10
2
SPD07N20
Z
thJC
=
f
(t
p
)
parameter :
D
=
t
p
/T
10
1
SPD07N20
K/W
A
tp
= 22.0
µs
/I
D
V
DS
10
0
100 µs
I
D
Z
thJC
1 ms
R
DS
(o
n)
10
1
=
10
-1
D = 0.50
0.20
10
0
10 ms
0.10
10
-2
0.05
0.02
single pulse
DC
0.01
10
-1
0
10
10
1
10
2
V
10
3
10
-3
-7
10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
V
DS
t
p
Rev. 2.5
Page 5
2013-06-27
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