SEMICONDUCTOR
TECHNICAL DATA
HIGH VOLTAGE APPLICATION.
TELEPHONE APPLICATION.
B
MPSA42/43
EPITAXIAL PLANAR NPN TRANSISTOR
C
FEATURES
A
Complementary to MPSA92/93.
N
K
E
G
MAXIMUM RATING (Ta=25
CHARACTERISTIC
Collector-Base
Voltage
Collector-Emitter
Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
MPSA42
MPSA43
MPSA42
MPSA43
)
SYMBOL
V
CBO
RATING
300
200
300
200
6.0
500
-500
625
150
-55 150
UNIT
V
D
H
F
F
L
V
CEO
V
EBO
I
C
I
E
P
C
T
j
T
stg
V
V
mA
mA
mW
1
2
3
M
C
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
MILLIMETERS
4.70 MAX
4.80 MAX
3.70 MAX
0.45
1.00
1.27
0.85
0.45
_
14.00 + 0.50
0.55 MAX
2.30
0.45 MAX
1.00
J
1. EMITTER
2. BASE
3. COLLECTOR
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Collector Cut-off
Current
Emitter Cut-off
Current
MPSA42
MPSA43
MPSA42
MPSA43
MPSA42
MPSA43
MPSA42
MPSA43
SYMBOL
V
(BR)CBO
TEST CONDITION
I
C
=100 A, I
E
=0
MIN.
300
200
300
200
-
-
-
-
40
40
40
-
-
50
-
-
TYP.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
-
-
-
-
0.1
0.1
0.1
0.1
-
-
-
0.5
0.9
-
3.0
4.0
V
V
MHz
pF
UNIT
V
V
(BR)CEO
I
C
=1.0mA, I
B
=0
V
CB
=200V, I
E
=0
V
CB
=160V, I
E
=0
V
EB
=6V, I
C
=0
V
EB
=4V, I
C
=0
I
C
=1.0mA, V
CE
=10V
V
I
CBO
A
I
EBO
A
DC Current Gain
* h
FE
I
C
=10mA, V
CE
=10V
I
C
=30mA, V
CE
=10V
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output
Capacitance
MPSA42
MPSA43
* V
CE(sat)
* V
BE(sat)
f
T
C
ob
I
C
=20mA, I
B
=2.0mA
I
C
=20mA, I
B
=2.0mA
V
CE
=20V, I
C
=10mA, f=100MHz
V
CB
=20V, I
E
=0, f=1MHz
*Pulse Test : Pulse Width 300 S, Duty Cycle 2.0%
1999. 11. 30
Revision No : 3
1/2
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