MCC
Features
l
Through Hole Package
l
150
o
C Junction Temperature
omponents
21201 Itasca Street Chatsworth
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% !"#
MPSA44
NPN Silicon High
Voltage Transistor
625mW
Pin Configuration
Bottom View
C
B
E
A
TO-92
E
Mechanical Data
l
Case: TO-92, Molded Plastic
l
Marking: A44
B
Maximum Ratings @ 25
o
C Unless Otherwise Specified
Charateristic
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current(DC)
Power Dissipation@T
A
=25
o
C
Power Dissipation@T
C
=25
o
C
Thermal Resistance, Junction to
Ambient Air
Thermal Resistance, Junction to
Case
Operating & Storage Temperature
Symbol Value
V
CEO
400
V
CBO
400
V
EBO
I
C
P
d
P
d
R
q
JA
C
Unit
V
V
V
mA
mW
mW/
o
C
W
mW/
o
C
o
D
5.0
200
625
5.0
1.5
12
200
83.3
G
DIMENSIONS
C/W
C/W
o
DIM
A
B
C
D
E
G
R
q
JC
o
T
j
, T
STG
-55~150
C
INCHES
MIN
.175
.175
.500
.016
.135
.095
MAX
.185
.185
---
.020
.145
.105
MM
MIN
4.45
4.46
12.7
0.41
3.43
2.42
MAX
4.70
4.70
---
0.63
3.68
2.67
NOTE
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MPSA44
MCC
Characteristic
Symbol
Min
Max
Unit
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
400
400
5.0
—
—
—
—
—
0.1
0.1
Vdc
Vdc
Vdc
µAdc
µAdc
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(1)
(I
C
= 1.0 mAdc, I
B
= 0)
Collector–Base Breakdown Voltage
(I
C
= 100
mAdc,
I
E
= 0)
Emitter–Base Breakdown Voltage
(I
E
=
100
mAdc,
I
C
= 0)
Collector Cutoff Current
(V
CB
=
300
Vdc, I
E
= 0)
Emitter Cutoff Current
(V
EB
= 4.0 Vdc, I
C
= 0)
ON CHARACTERISTICS
(1)
DC Current Gain
(1)
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc)
(I
C
= 10 mAdc, V
CE
= 10 Vdc)
(I
C
=
100
mAdc, V
CE
= 10 Vdc)
Collector–Emitter Saturation Voltage
(1)
(I
C
=
10
mAdc, I
B
=
1.0
mAdc)
(I
C
=
50
mAdc, I
B
=
5.0
mAdc)
Base–Emitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
h
FE
70
80
60
300
V
CE(sat)
—
—
V
BE(sat)
—
Vdc
0.2
0.3
0.75
Vdc
SMALL–SIGNAL CHARACTERISTICS
Output Capacitance
(V
CB
= 20 Vdc, I
E
= 0, f = 1.0 MHz)
Input Capacitance
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
Small–Signal Current Gain
(I
C
= 10 mAdc, V
CE
= 10 Vdc, f = 20 MHz)
1. Pulse Test: Pulse Width
v
300
ms,
Duty Cycle
v
2.0%.
C
obo
C
ibo
h
fe
—
—
1.0
7.0
130
—
pF
pF
—
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MPSA44
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
160
140
hFE, DC CURRENT GAIN
120
100
80
60
40
20
1.0
2.0
25°C
T
A
= 125°C
V
CE
= 10 V
0.5
0.4
0.3
I
C
= 1.0 mA
I
C
= 10 mA
MCC
I
C
= 50 mA
T
A
= 25°C
0.2
0.1
0
10
-55°C
5.0
10
20
50
100
I
C
, COLLECTOR CURRENT (mA)
200 300
30
100
300
1.0 k 3.0 k
I
B
, BASE CURRENT (µA)
10 k
50 k
Figure 1. DC Current Gain
Figure 2. Collector Saturation Region
1.0
T
A
= 25°C
0.8
V, VOLTAGE (VOLTS)
0.6
0.4
0.2
0
0.1
V
CE(sat)
@ I
C
/I
B
= 10
V
BE(sat)
@ I
C
/I
B
= 10
1000
IC, COLLECTOR CURRENT (mA)
300
200
100
1.0 ms
T
A
= 25°C
T
C
= 25°C
100
µs
1.0 s
V
BE(on)
@ V
CE
= 10 V
20
10
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
VALID FOR DUTY CYCLE
≤
10%
2.0
MPSA44
200
500
2.0
0.3
30
3.0
10
1.0
I
C
, COLLECTOR CURRENT (mA)
100
300
1.0
1.0
20
50
10
100
5.0
V
CE
, COLLECTOR VOLTAGE (VOLTS)
Figure 3. “On” Voltages
Figure 4. Active Region — Safe Operating Area
100
50
C, CAPACITANCE (pF)
20
10
5.0
2.0
1.0
0.3 0.5
1.0
T
A
= 25°C
f = 1.0 MHz
3.0
10
30
REVERSE BIAS (VOLTS)
100
300
C
ob
C
ib
Figure 5. Capacitance
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