MP04TT500
MP04TT500
Dual Thyristor Water Cooled Module
Advance Information
DS5446-1.2 May 2001
FEATURES
s
s
s
s
s
s
Dual Device Module
Electrically Isolated Package
Pressure Contact Construction
International Standard Footprint
Alumina (Non Toxic) Isolation Medium
Integral Water Cooled Heatsink
KEY PARAMETERS
V
DRM
I
T(AV)(per arm)
I
TSM(per arm)
I
T(RMS)(per arm)
V
isol
2800V
480A
11200A
753A
3000V
5 (G1)
4 (K1)
3
(A)
1
(AK)
2
(A)
APPLICATIONS
s
s
s
s
6 (G2)
7 (K2)
Motor Control
Controlled Rectifier Bridges
Heater Control
AC Phase Control
Fig. 1 TT Circuit diagram
VOLTAGE RATINGS
Type Number
Repetitive Peak
Voltages
V
DRM
V
RRM
V
2800
2700
2600
2500
Conditions
MP04TT500-28
MP04TT500-27
MP04TT500-26
MP04TT500-25
T
vj
= 0˚ to 125˚C,
I
DRM
= I
RRM
= 50mA
V
DSM
= V
RSM
=
V
DRM
= V
RRM
+ 100V
respectively
Module outline type code:
MP04-W3
Module outline type code:
MP04-W3A
Lower voltage grades available
ORDERING INFORMATION
Order As:
MP04TT500-XX-W2
MP04TT500-XX-W3
MP04TT500-XX-W3A
1/4 - 18 NPT connection
1/4 - 18 NPT connection
1/4 - 18 NPT water connection
thread
XX shown in the part number about represents V
DRM
/100
selection required, eg. MP04TT500-27-W2
Note: When ordering, please use the complete part number.
Module outline type code:
MP04-W2
(See Package Details for further information)
Fig. 2 Module package variants - (not to scale)
1/10
www.dynexsemi.com
MP04TT500
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety
precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
Symbol
I
T(AV)
Parameter
Mean on-state current
Test Conditions
Half wave resistive load,
4.5 Ltr/min
I
T(RMS
RMS value
T
water (in)
= 25˚C @ 4.5 Ltr/min
T
water (in)
= 40˚C @ 4.5 Ltr/min
I
TSM
I
2
t
I
TSM
I
2
t
V
isol
Surge (non-repetitive) on-current
I
2
t for fusing
Surge (non-repetitive) on-current
I
2
t for fusing
Isolation voltage
10ms half sine, T
j
= 125˚C
V
R
= 0
10ms half sine, T
j
= 125˚C
V
R
= 50% V
DRM
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
T
water (in)
= 25˚C
T
water (in)
= 40˚C
Max.
540
480
845
753
11.25
633 x 10
3
9
506 x 10
3
3000
Units
A
A
A
A
kA
A
2
s
kA
A
2
s
V
THERMAL AND MECHANICAL RATINGS
Symbol
R
th(j-w)
Parameter
Thermal resistance - junction to water
(per thyristor)
Test Conditions
dc, 4.5 Ltr/min
Half wave, 4.5 Ltr/min
3 Phase, 4.5 Ltr/min
T
vj
T
stg
-
Virtual junction temperature
Storage temperature range
Screw torque
Mounting - M6
Electrical connections - M10
Reverse (blocking)
-
Min.
-
-
-
-
–40
6 (53)
-
Max.
0.102
0.106
0.112
125
125
-
Units
˚C/kW
˚C/kW
˚C/kW
˚C
˚C
Nm (lb.ins)
12 (106) Nm (lb.ins)
2/10
www.dynexsemi.com
MP04TT500
DYNAMIC CHARACTERISTICS
Symbol
I
RRM
/I
DRM
dV/dt
dI/dt
Parameter
Peak reverse and off-state current
Linear rate of rise of off-state voltage
Rate of rise of on-state current
Test Conditions
t V
RRM
/V
DRM
, T
j
= 125˚C
To 67% V
DRM
, T
j
= 125˚C
From 67% V
DRM
to 500A, gate source 10V, 5Ω
t
r
= 0.5µs, T
j
= 125˚C
V
T(TO)
r
T
Threshold voltage. (See note 1)
On-state slope resistance. (See note 1)
At T
vj
= 125˚C
At T
vj
= 125˚C
-
-
0.91
0.65
V
mΩ
Min.
-
-
-
Max.
50
1000
500
Units
mA
V/µs
A/µs
Note 1:
The data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the
semiconductor elements only. Forward voltage drops measured at the power terminals of the module will be in excess of these
figures due to the impedance of the busbar from the terminal to the semiconductor.
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
V
GT
I
GT
V
GD
V
FGM
V
FGN
V
RGM
I
FGM
P
GM
P
G(AV)
Parameter
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Test Conditions
V
DRM
= 5V, T
case
= 25
o
C
V
DRM
= 5V, T
case
= 25
o
C
At V
DRM
T
case
= 125
o
C
Anode positive with respect to cathode
Anode negative with respect to cathode
-
Anode positive with respect to cathode
See table fig. 5
-
Max.
3.5
200
0.25
30
0.25
5
10
150
10
Units
V
mA
V
V
V
V
A
W
W
3/10
www.dynexsemi.com
MP04TT500
2500
Measured under pulse
conditions
25
1: T
j
= 125˚C Min
2: T
j
= 125˚C Max
1
2
I
2
t = Î
2
x t
2
20
Peak half sine wave on-state current - (kA)
Instantaneous on-state current, I
T
- (A)
2000
1500
15
400
I
2
t value - (A
2
s x 10
3
)
1000
10
I
2
t
350
500
5
300
0
0.5
1.0
1.5
2.0
Instantaneous on-state voltage, V
T
- (V)
2.5
0
1
ms
10
1
2 3 45
10
250
20 30 50
Cycles at 50Hz
Duration
Fig. 3 Maximum (limit) on-state characteristics
100
Fig. 4 Surge (non-repetitive) on-state current vs time
(with 50% V
RSM
at T
case
= 125˚C)
0.12
Thermal resistance, Junction to water, R
th(j-w)
- (°C/W)
Gate trigger voltage V
GT
- (V)
Pulse width Frequency Hz Table gives pulse power P
GM
in Watts
µs
50 100 400
100
150 150 150
200
150 150 125
500
150 150 100
1ms
150 100 25
10ms
20 - -
0.1
10
50
0W
20
W
10
W
5W
W
10
0.08
U
1
ppe
it
r lim
99%
0.06
0.04
T
j
= 25˚C
T
j
= -40˚C
Region of certain
triggering
V
GD
er
Low
t 99
limi
%
T
j
= 125˚C
0.02
0.1
0.001
0.01
0.1
1
10
I
FGM
0
0.001
0.01
0.1
Gate trigger current, I
GT
- (A)
1
10
Time (Seconds)
100
1000
Fig. 5 Gate characteristics
Fig. 6 Transient thermal impedance - dc
4/10
www.dynexsemi.com
MP04TT500
2200
2000
1800
Power dissipation (Watts, per arm)
2200
30°
60°
90°
120°
180°
Power dissipation (Watts, per arm)
2000
1800
1600
1400
1200
1000
800
600
400
200
0
30°
60°
90°
120°
180°
DC
1600
1400
1200
1000
800
600
400
200
0
0
100 200 300 400 500 600 700 800 900 1000
Sine wave current (Average, per arm)
0
200
400
600
800
1000
1200
Square wave current (Average, per arm)
1400
Fig. 7 On-state power loss per arm vs on-state current at
specified conduction angles, sine wave 50/60Hz
100
90
Maximum permissble inlet water temperature - (°C)
Fig. 8 On-state power loss per arm vs on-state current at
specified conduction angles, square wave 50/60Hz
100
Maximum permissible water inlet temperature - (°C)
30°
60°
90°
120°
180°
90
80
70
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
0
30°
60°
90°
120°
180°
DC
100
200
300
400
500
600
0
100
Sine wave current (Average, per arm)
200
300
400
500
600
700
Square wave current (Average, per arm)
800
Fig. 9 Maximum permissible water inlet temperature vs on-
state current at specified conduction angles,
sine wave 50/60Hz
Fig. 10 Maximum permissible water inlet temperature vs on-
state current at specified conduction angles,
square wave 50/60Hz
5/10
www.dynexsemi.com
京公网安备 11010802033920号
EEWORLD
