Bulletin PD-20520 rev. M 07/04
10MQ100N
SCHOTTKY RECTIFIER
2.1 Amp
I
F(AV)
= 2.1Amp
V
R
= 100V
Major Ratings and Characteristics
Characteristics
I
F
V
RRM
I
FSM
@ tp = 5 µs sine
V
F
T
J
@ 1.5Apk, T
J
=125°C
range
DC
Description/ Features
The 10MQ100N surface mount Schottky rectifier has been de-
signed for applications requiring low forward drop and very small
foot prints on PC boards. Typical applications are in disk drives,
switching power supplies, converters, free-wheeling diodes, battery
charging, and reverse battery protection.
Small foot print, surface mountable
Low forward voltage drop
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
10MQ100N Units
2.1
100
120
0.68
- 55 to 150
A
V
A
V
°C
Case Styles
10MQ100N
SMA
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1
10MQ100N
Bulletin PD-20520 rev. M 07/04
Voltage Ratings
Part number
V
R
Max. DC Reverse Voltage (V)
V
RWM
Max. Working Peak Reverse Voltage (V)
10MQ100N
100
Absolute Maximum Ratings
Parameters
I
F(AV)
Max. Average Forward Current
* See Fig. 4
I
FSM
E
AS
I
AR
Max. Peak One Cycle Non-Repetitive
Surge Current * See Fig. 6, T
J
= 25°C
Non-Repetitive Avalanche Energy
Repetitive Avalanche Current
10MQ
1.5
120
30
1.0
0.5
Units
A
Conditions
50% duty cycle @ T
L
= 126 °C, rectangular wave form.
On PC board 9mm
2
island (.013mm thick copper pad area)
5µs Sine or 3µs Rect. pulse
10ms Sine or 6ms Rect. pulse
T
J
= 25 °C, I
AS
= 0.5A, L = 8mH
Following any rated
load condition and
with rated V
RRM
applied
A
mJ
A
Electrical Specifications
Parameters
V
FM
Max. Forward Voltage Drop
* See Fig. 1
(1)
10MQ
0.78
0.85
0.63
0.68
Units
V
V
V
V
mA
mA
V
mΩ
pF
nH
V/µs
@ 1A
@ 1.5A
@ 1A
@ 1.5A
T
J
= 25 °C
T
J
= 125 °C
T
J
= T
J
max.
Conditions
T
J
= 25 °C
T
J
= 125 °C
V
R
= rated V
R
I
RM
Max. Reverse Leakage Current (1)
* See Fig. 2
0.1
1
0.52
78.4
38
2.0
10000
V
F(TO)
Threshold Voltage
r
t
C
T
L
S
Forward Slope Resistance
Typical Junction Capacitance
Typical Series Inductance
(Rated V
R
)
(1) Pulse Width < 300µs, Duty Cycle < 2%
V
R
= 10V
DC
, T
J
= 25°C, test signal = 1Mhz
Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change
Thermal-Mechanical Specifications
Parameters
T
J
T
stg
Max. Storage Temperature Range
10MQ
- 55 to 150
80
Units
°C
°C
°C/W DC operation
Conditions
Max. Junction Temperature Range (*) - 55 to 150
R
thJA
Max. Thermal Resistance Junction
to Ambient
wt
Approximate Weight
Case Style
Device Marking
(*) dPtot
dTj
<
1
Rth( j-a)
0.07(0.002) g (oz.)
SMA
IR1J
Similar D-64
thermal runaway condition for a diode on its own heatsink
2
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10MQ100N
Bulletin PD-20520 rev. M 07/04
1
10
T
J
= 150°C
125°C
100°C
R
everse Current - I (mA)
0.1
R
0.01
75°C
50°C
25°C
0.001
0.0001
Instantaneous F
orward Current - I
F
(A)
0
T
J
= 150°C
T
J
= 125°C
1
T
J
= 25°C
0
20
40
60
80
100
Reverse Voltage - V
R
(V)
Fig. 2 - Typical Peak Reverse Current
Vs. Reverse Voltage
100
Junction Capacitance - C
T
(pF
)
T
J
= 25°C
10
0.1
0.4
0.6
0.8
1
1.2
1.4
1.6
Forward Voltage Drop - V
FM
(V)
1
Fig. 1 - Maximum Forward Voltage Drop Characteristics
0
20
40
60
80
100
Reverse Voltage - V
R
(V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
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3
10MQ100N
Bulletin PD-20520 rev. M 07/04
150
Allowable Case T
emperature - (°C)
1.6
1.4
Average Power Loss - (Watts)
1.2
1
0.8
0.6
0.4
0.2
0
0
0.4
0.8
1.2
1.6
2
2.4
RMSLimit
DC
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
140
130
120
110
100
90
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
DC
S
quare wave (D = 0.50)
80% Rated V
R
applied
se e note (2)
0
0.4
0.8
1.2
1.6
2
2.4
Average Forward Current - I
F(AV)
(A)
Average Forward Current - I
F(AV)
(A)
Fig. 4 - Maximum Average Forward Current
Vs. Allowable Lead Temperature
Fig. 5 - Maximum Average Forward Dissipation
Vs. Average Forward Current
Non - Repetitive Surge Current - I
FSM
(A)
100
Tj = 25˚C
At Any Rated Load Condition
And With Rated Vrrm Applied
Following Surge
10
10
100
1000
10000
Square Wave Pulse Duration - t
p
(microsec)
Fig. 6 - Maximum Peak Surge Forward Current Vs. Pulse Duration
(2)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward Power Loss = I
F(AV)
x V
FM
@ (I
F(AV)
/
D) (see Fig. 6);
Pd
REV
= Inverse Power Loss = V
R1
x I
R
(1 - D); I
R
@ V
R1
= 80% rated V
R
4
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10MQ100N
Bulletin PD-20520 rev. M 07/04
Outline Table
Device Marking: IR1J
CATHODE
AN OD E
1.40 (.055)
1.60 (.062)
2.50 (.098)
2.90 (.114)
1
2
4.00 (.157)
4.60 (.181)
.152 (.006)
.305 (.012)
2.00 (.078)
2.44 (.096)
0.76 (.030)
1.52 (.060)
.103 (.004)
.203 (.008)
4.80 (.188)
5.28 (.208)
1 P O LA R I TY
2 PA R T N U M B ER
1.47 MIN.
(.058 MIN.)
2.10 MAX.
(.085 MAX. )
1.27 MIN.
(.050 MIN.)
5.53 (.218)
SOLDERING PAD
Outline SMA
Dimensions in millimeters and (inches)
For recommended footprint and soldering techniques refer to application note #AN-994
Marking & Identification
Each device has 2 rows for identification. The first row designates the device as manufactured by International
Rectifier, indicated by the letters "IR", and the Part Number (indicates the current, the voltage rating and
Schottky Generation). The second row indicates the year, the week of manufacturing and the Site ID.
IR1J
VOLTAGE
CURRENT
IR LOGO
YYWWX
SITE ID
WEEK
2nd digit of the YEAR
"Y" = 1st digit of the YEAR "standard product"
"P" = "Lead-Free"
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