MMDF3207 datasheet, PDF - EEWORLD Datasheet

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MMDF3207: DescriptionDUAL TMOS POWER MOSFET 7.8 AMPERES 20 VOLTS; CategoryDiscrete semiconductor The transistor; File Size60KB，4 Pages; ManufacturerMotorola ( NXP ); Websitehttps://www.nxp.com

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MMDF3207 Overview

DUAL TMOS POWER MOSFET 7.8 AMPERES 20 VOLTS

MMDF3207 Parametric

Parameter Name	Attribute value
Maker	Motorola ( NXP )
Parts packaging code	SOT
package instruction	SMALL OUTLINE, R-PDSO-G8
Contacts	8
Manufacturer packaging code	CASE 751-06
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	LOGIC LEVEL COMPATIBLE, AVALANCHE ENERGY RATED
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	20 V
Maximum drain current (ID)	7.8 A
Maximum drain-source on-resistance	0.033 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G8
Number of components	2
Number of terminals	8
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	P-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

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Medium Power Surface Mount Products

MMDF3207

Motorola Preferred Device

TMOS Dual P-Channel

Field Effect Transistors

™

DUAL TMOS

POWER MOSFET

7.8 AMPERES

20 VOLTS

RDS(on) = 33 m

WaveFET™ devices are an advanced series of power MOSFETs which utilize Motorola’s

latest MOSFET technology process to achieve the lowest possible on–resistance per silicon

area. They are capable of withstanding high energy in the avalanche and commutation

modes and the drain–to–source diode has a very low reverse recovery time. WaveFET™

devices are designed for use in low voltage, high speed switching applications where power

efficiency is important. Typical applications are dc–dc converters, and power management

in portable and battery powered products such as computers, printers, cellular and cordless

phones. They can also be used for low voltage motor controls in mass storage products

such as disk drives and tape drives. The avalanche energy is specified to eliminate the

guesswork in designs where inductive loads are switched and offer additional safety margin

against unexpected voltage transients.

•

Ultra Low RDS(on) Provides Higher Efficiency and

Extends Battery Life in Portable Applications

•

Characterized Over a Wide Range of Power Ratings

•

Logic Level Gate Drive — Can Be Driven by

Logic ICs

•

Diode Is Characterized for Use In Bridge Circuits

•

Diode Exhibits High Speed, with Soft Recovery

•

IDSS Specified at Elevated Temperature

•

Miniature SO–8 Surface Mount Package —

Saves Board Space

CASE 751–06, Style 13

SO–8

SOURCE 1

GATE 1

SOURCE 2

GATE 2

DRAIN 1

DRAIN 2

TOP VIEW

DEVICE MARKING

D3207

Device

MMDF3207R2

ORDERING INFORMATION

Reel Size

13″

Tape Width

12 mm embossed tape

Quantity

2500 units

This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.

HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Preferred

devices are Motorola recommended choices for future use and best overall value.

Motorola TMOS Power MOSFET Transistor Device Data

Motorola, Inc. 1997

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