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MMBT6429LT1

Description
RF SMALL SIGNAL TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size163KB,4 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
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MMBT6429LT1 Overview

RF SMALL SIGNAL TRANSISTOR

MMBT6429LT1 Parametric

Parameter NameAttribute value
MakerLRC
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)0.2 A
ConfigurationSingle
Minimum DC current gain (hFE)500
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.3 W
surface mountYES
Nominal transition frequency (fT)100 MHz
LESHAN RADIO COMPANY, LTD.
Amplifier Transistors
NPN Silicon
3
COLLECTOR
MMBT6428LT1
MMBT6429LT1
3
1
BASE
2
EMITTER
1
2
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Symbol
V
CEO
V
CBO
V
EBO
Value
6428LT1 6429LT1
Unit
50
60
6.0
200
45
55
Vdc
Vdc
Vdc
mAdc
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
I
C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
R
θJA
P
D
556
300
2.4
R
θJA
T
J
, T
stg
417
–55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
DEVICE MARKING
MMBT6428LT1 = 1KM, MMBT6429LT1 = 1L
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
(I
C
= 1.0 mAdc, I
B
= 0)
(I
C
= 1.0 mAdc, I
B
= 0)
Collector–Base Breakdown Voltage
(I
C
= 0.1mAdc, I
E
= 0)
(I
C
= 0.1mAdc, I
E
= 0)
Collector Cutoff Current
( V
CE
= 30Vdc, )
Collector Cutoff Current
( V
CB
= 30Vdc, I
E
= 0 )
Emitter Cutoff Current
( V
EB
= 5.0Vdc, I
C
= 0)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
I
CBO
I
EBO
0.01
0.01
µAdc
MMBT6428
MMBT6429
I
CBO
0.1
µAdc
MMBT6428
MMBT6429
V
(BR)CBO
60
55
µAdc
V
(BR)CEO
50
45
Vdc
Vdc
M22–1/4

MMBT6429LT1 Related Products

MMBT6429LT1 MMBT6428LT1
Description RF SMALL SIGNAL TRANSISTOR RF SMALL SIGNAL TRANSISTOR
Maker LRC LRC
Reach Compliance Code unknow unknow
Maximum collector current (IC) 0.2 A 0.2 A
Configuration Single Single
Minimum DC current gain (hFE) 500 250
Maximum operating temperature 150 °C 150 °C
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 0.3 W 0.3 W
surface mount YES YES
Nominal transition frequency (fT) 100 MHz 100 MHz
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