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MMBF4392L

Description
SMALL SIGNAL, FET
CategoryDiscrete semiconductor    The transistor   
File Size107KB,6 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
Download Datasheet Parametric Compare View All

MMBF4392L Overview

SMALL SIGNAL, FET

MMBF4392L Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMotorola ( NXP )
Parts packaging codeSOT-23
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Manufacturer packaging codeCASE 318-07
Reach Compliance Codeunknow
ConfigurationSINGLE
Minimum drain-source breakdown voltage30 V
Maximum drain-source on-resistance60 Ω
FET technologyJUNCTION
Maximum feedback capacitance (Crss)3.5 pF
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeDEPLETION MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power consumption environment0.225 W
Maximum power dissipation(Abs)0.225 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBF4391LT1/D
JFET Switching Transistors
N–Channel
2 SOURCE
3
GATE
MMBF4391LT1
MMBF4392LT1
MMBF4393LT1
3
1
1 DRAIN
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Drain–Gate Voltage
Gate–Source Voltage
Forward Gate Current
Symbol
VDS
VDG
VGS
IG(f)
Value
30
30
30
50
Unit
Vdc
Vdc
Vdc
mAdc
2
CASE 318 – 08, STYLE 10
SOT– 23 (TO – 236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
Max
225
1.8
R
q
JA
TJ, Tstg
556
– 55 to +150
Unit
mW
mW/°C
°C/W
°C
DEVICE MARKING
MMBF4391LT1 = 6J; MMBF4392LT1 = 6K; MMBF4393LT1 = 6G
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage
(IG = 1.0
µAdc,
VDS = 0)
Gate Reverse Current
(VGS = 15 Vdc, VDS = 0, TA = 25°C)
(VGS = 15 Vdc, VDS = 0, TA = 100°C)
Gate–Source Cutoff Voltage
(VDS = 15 Vdc, ID = 10 nAdc)
MMBF4391LT1
MMBF4392LT1
MMBF4393LT1
ID(off)
1.0
1.0
nAdc
µAdc
V(BR)GSS
IGSS
VGS(off)
–4.0
–2.0
–0.5
–10
–5.0
–3.0
1.0
0.20
nAdc
µAdc
Vdc
30
Vdc
Off–State Drain Current
(VDS = 15 Vdc, VGS = –12 Vdc)
(VDS = 15 Vdc, VGS = –12 Vdc, TA = 100°C)
1. FR– 5 = 1.0

0.75

0.062 in.
Thermal Clad is a trademark of the Bergquist Company
Motorola Small–Signal Transistors, FETs and Diodes Device Data
©
Motorola, Inc. 1997
1

MMBF4392L Related Products

MMBF4392L MMBF4391LT1 MMBF4392LT1
Description SMALL SIGNAL, FET 30 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB SMALL SIGNAL, FET
Maker Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP )
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknow unknow unknow
Configuration SINGLE SINGLE SINGLE
Minimum drain-source breakdown voltage 30 V 30 V 30 V
Maximum drain-source on-resistance 60 Ω 30 Ω 60 Ω
FET technology JUNCTION JUNCTION JUNCTION
Maximum feedback capacitance (Crss) 3.5 pF 3.5 pF 3.5 pF
JEDEC-95 code TO-236AB TO-236AB TO-236AB
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
JESD-609 code e0 e0 e0
Number of components 1 1 1
Number of terminals 3 3 3
Operating mode DEPLETION MODE DEPLETION MODE DEPLETION MODE
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power consumption environment 0.225 W 0.225 W 0.225 W
Maximum power dissipation(Abs) 0.225 W 0.225 W 0.225 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
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