LESHAN RADIO COMPANY, LTD.
High-Speed Switching Diode
3
CATHODE
1
ANODE
MMBD914LT1
3
1
2
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Current
Peak Forward Surge Current
Symbol
V
R
I
F
I
FM(surge)
Value
100
200
500
Unit
Vdc
mAdc
mAdc
CASE 318–08, STYLE 8
SOT– 23 (TO–236AB)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board
(1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate,
(2)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
P
D
Max
225
1.8
556
300
2.4
R
θ
JA
T
J
, T
stg
417
–55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
R
θ
JA
P
D
DEVICE MARKING
MMBD914LT1 = 5D
ELECTRICAL CHARACTERISTICS
(T
Characteristic
A
= 25°C unless otherwise noted)
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(I
R
= 100
µ
Adc)
Reverse Voltage Leakage Current
(V
R
= 20 Vdc)
(V
R
V
(BR)
I
R
100
—
Vdc
—
—
C
T
V
F
t
rr
—
—
—
25
5.0
4.0
1.0
4.0
nAdc
= 75 Vdc)
µ
Adc
pF
Vdc
ns
Diode Capacitance
(V
R
= 0, f = 1.0 MHz)
Forward Voltage
(I
F
= 10 mAdc)
Reverse Recovery Time
(I
F
= I
R
= 10 mAdc) (Figure 1)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
G19–1/2
LESHAN RADIO COMPANY, LTD.
MMBD914LT1
+10 V
820
Ω
2.0 k
0.1µF
t
r
t
p
10%
t
I
F
t
rr
t
100
µH
I
F
0.1
µF
50
Ω
OUTPUT
PULSE
GENERATOR
DUT
50
Ω
INPUT
SAMPLING
OSCILLOSCOPE
90%
i
R(REC)
= 1.0 mA
INPUT SIGNAL
V
R
I
R
OUTPUT PULSE
(I
F
= I
R
= 10 mA; MEASURED
at i
R(REC)
= 1.0 mA)
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I
F
) of 10mA.
Notes:
2. Input pulse is adjusted so I
R(peak)
is equal to 10mA.
Notes:
3. t
p
» t
rr
Figure 1. Recovery Time Equivalent Test Circuit
100
10
I
F
, FORWARD CURRENT (mA)
T
A
= 85°C
10
I
R
, REVERSE CURRENT (
µA)
T
A
=150°C
T
A
=125°C
1.0
T
A
= –40°C
T
A
=85°C
0.1
T
A
= 25°C
1.0
T
A
=55°C
0.01
0.1
0.2
0.4
0.6
0.8
1.0
1.2
0.001
0
10
T
A
=25°C
20
30
40
50
V
F
, FORWARD VOLTAGE (VOLTS)
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 2. Forward Voltage
Figure 3. Leakage Current
0.68
C
D
, DIODE CAPACITANCE (pF)
0.64
0.60
0.56
0.52
0
2.0
4.0
6.0
8.0
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
G19–2/2
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