LESHAN RADIO COMPANY, LTD.
Schottky Barrier Diodes
Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF
detector applications. Readily available to many other fast switching RF and digital
applications. They are housed in the SOT–323/SC–70 package which is designed for
low–power surface mount applications.
• Extremely Low Minority Carrier Lifetime
• Very Low Capacitance
• Low Reverse Leakage
• Available in 8 mm Tape and Reel
MMBD110T1
MMBD330T1
MMBD770T1
3
1
2
CASE 419–02, STYLE 2
DEVICE MARKING
MMBD110T1 = 4M
MAXIMUM RATINGS
Rating
Reverse Voltage
SOT–323 /SC – 70
MMBD330T1 = 4T
MMBD770T1 = 5H
Symbol
V
R
Value
7.0
30
70
120
–55 to +125
–55 to +150 °C
Typ
10
—
—
0.88
0.9
0.5
20
13
9.0
6.0
0.5
0.38
0.52
0.42
0.7
Unit
Vdc
MMBD110T1
MMBD330T1
MMBD770T1
Forward Power Dissipation
T
A
= 25°C
Junction Temperature
Storage Temperature Range
P
F
T
J
T
stg
mW
°C
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Reverse Breakdown Voltage
V
(BR)R
(I
R
= 10
µA)
MMBD110T1
7.0
MMBD330T1
MMBD770T1
Diode Capacitance
(V
R
= 0, f = 1.0 MHZ, Note 1)
(V
R
= 15 Volts, f = 1.0 MHZ)
(V
R
= 20 Volts, f = 1.0 MHZ)
Reverse Leakage
(V
R
= 3.0 V)
(V
R
= 25 V)
(V
R
= 35 V)
Noise Figure
(f = 1.0 GHz, Note 2)
Forward Voltage
(I
F
= 10 mA)
(I
F
= 1.0 mAdc)
(I
F
= 10 mA)
(I
F
= 1.0 mAdc)
(I
F
= 10 mA)
C
T
MMBD110T1
MMBD330T1
MMBD770T1
I
R
MMBD110T1
MMBD330T1
MMBD770T1
NF
MMBD110T1
V
F
MMBD110T1
MMBD330T1
MMBD770T1
—
—
—
—
—
—
—
—
—
—
—
—
30
70
Max
—
—
—
Unit
Volts
pF
1.0
1.5
1.0
nAdc
250
200
200
dB
—
Vdc
0.6
0.45
0.6
0.5
1.0
MMBD110. 330. 770T1–1/4
LESHAN RADIO COMPANY, LTD.
MMBD110T1 MMBD330T1 MMBD770T1
TYPICAL CHARACTERISTICS
MMBD110T1
1.0
0.7
0.5
IR, REVERSE LEAKAGE (
m
A)
VR = 3.0 Vdc
0.2
0.1
0.07
0.05
100
IF, FORWARD CURRENT (mA)
10
TA = 85°C
TA = – 40°C
1.0
TA = 25°C
MMBD110T1
0.02
MMBD110T1
0.01
30
40
50
60
70
80
90 100 110
TA, AMBIENT TEMPERATURE (°C)
120
130
0.1
0.3
0.4
0.5
0.6
VF, FORWARD VOLTAGE (VOLTS)
0.7
0.8
Figure 1. Reverse Leakage
Figure 2. Forward Voltage
1.0
11
10
NF, NOISE FIGURE (dB)
LOCAL OSCILLATOR FREQUENCY = 1.0 GHz
(Test Circuit Figure 5)
C, CAPACITANCE (pF)
0.9
9
8
7
6
5
4
3
MMBD110T1
2
4.0
1
0.1
0.2
0.8
0.7
MMBD110T1
0.5
1.0
2.0
5.0
PLO, LOCAL OSCILLATOR POWER (mW)
10
0.6
0
1.0
2.0
3.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Capacitance
Figure 4. Noise Figure
NOTES ON TESTING AND SPECIFICATIONS
Note 1 — C
C
and C
T
are measured using a capacitance bridge
(Boonton Electronics Model 75A or equivalent).
Note 2 — Noise figure measured with diode under test in tuned
diode mount using UHF noise source and local oscillator (LO)
frequency of 1.0 GHz. The LO power is adjusted for 1.0 mW.
I
F
amplifier NF = 1.5 dB, f = 30 MHz, see Figure 5
Figure 5. Noise Figure Test Circui
MMBD110. 330. 770T1–2/4
LESHAN RADIO COMPANY, LTD.
MMBD110T1 MMBD330T1 MMBD770T1
TYPICAL CHARACTERISTICS
MMBD330T1
2.8
CT, TOTAL CAPACITANCE (pF)
2.4
2.0
1.6
1.2
0.8
0.4
0
f = 1.0 MHz
500
t
, MINORITY CARRIER LIFETIME (ps)
MMBD330T1
MMBD330T1
400
KRAKAUER METHOD
300
200
100
0
0
3.0
6.0
18
9.0
12
15
21
VR, REVERSE VOLTAGE (VOLTS)
24
27
30
0
10
20
40
60
30
50
70
IF, FORWARD CURRENT (mA)
80
90
100
Figure 6. Total Capacitance
Figure 7. Minority Carrier Lifetime
10
MMBD330T1
1.0
TA = 100°C
100
MMBD330T1
IF, FORWARD CURRENT (mA)
TA = – 40°C
10
TA = 85°C
IR, REVERSE LEAKAGE (
m
A)
TA = 75°C
0.1
0.01
TA = 25°C
1.0
TA = 25°C
0.001
0
6.0
12
18
VR, REVERSE VOLTAGE (VOLTS)
24
30
0.1
0.2
0.4
0.6
0.8
VF, FORWARD VOLTAGE (VOLTS)
1.0
1.2
Figure 8. Reverse Leakage
Figure 9. Forward Voltage
MMBD110. 330. 770T1–3/4
LESHAN RADIO COMPANY, LTD.
MMBD110T1 MMBD330T1 MMBD770T1
TYPICAL CHARACTERISTICS
MMBD770T1
2.0
CT, TOTAL CAPACITANCE (pF)
f = 1.0 MHz
1.6
500
MMBD770T1
MMBD770T1
400
KRAKAUER METHOD
300
1.2
t
, MINORITY CARRIER LIFETIME (ps)
50
0.8
200
0.4
100
0
0
0
5.0
10
15
20
25
30
35
VR, REVERSE VOLTAGE (VOLTS)
40
45
0
10
20
30
40
50
60
70
IF, FORWARD CURRENT (mA)
80
90
100
Figure 10. Total Capacitance
Figure 11. Minority Carrier Lifetime
10
MMBD770T1
1.0
TA = 100°C
100
MMBD770T1
IF, FORWARD CURRENT (mA)
IR, REVERSE LEAKAGE (
m
A)
10
TA = 85°C
TA = – 40°C
TA = 75°C
0.1
1.0
TA = 25°C
0.01
TA = 25°C
0.001
0
10
20
30
VR, REVERSE VOLTAGE (VOLTS)
40
50
0.1
0.2
0.4
0.8
1.2
VF, FORWARD VOLTAGE (VOLTS)
1.6
2.0
Figure 12. Reverse Leakage
Figure 13. Forward Voltage
MMBD110. 330. 770T1–4/4
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