MCC
)HDWXUHV
•
•
•
omponents
21201 Itasca Street Chatsworth
!"#
$
% !"#
MMBD6100
Low Current Leakage
SOT-23 Package For Surface Mount Application
Capable of 225Watts of Power Dissipation
C
Monolithic Dual
Switching Diode
5BM
A
A
SOT-23
A
D
0D[LPXP5DWLQJV
•
•
•
Operating Temperature: -55
O
C to +150
O
C
Storage Temperature: -55
O
C to +150
O
C
Maximum Thermal Resistance; 556
O
C/W Junction To Ambient
C
B
F
E
(OHFWULFDO &KDUDFWHULVWLFV # & 8QOHVV 2WKHUZLVH 6SHFLILHG
Reverse Voltage
Minimum Reverse
Breakdown Voltage
Forward Current
Power Dissipation
FR-5 Board
(1)
Power Dissipation
Alumina Substrate
(2)
Peak Forward Surge
Current
Junction
Temperature
Forward Voltage
V
R
V
BR
I
F
P
TOT
70V
70V
200mA
225mW
1.8mW/
O
C
300mW
2.4mW/
O
C
500mA
150
O
C
0.55~0.7V
0.85~1.1V
I
F
=1.0mA
I
F
=100mA
V
R
=50V
T
A
=25
O
C,
Measured at
V
R
=0V
I
F
=I
R
=10mA
I
R (RCE)
=1.0mA
.037
.950
.037
.950
.035
.900
.079
2.000
inches
mm
I
BR
=100
A
T
A
=25
O
C
Derate above
25
O
C
T
A
=25
O
C
Derate above
25
O
C
8.3ms, half
sine
G
H
J
K
DIMENSIONS
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
P
TOT
I
FSM
T
J
V
F
DIM
A
B
C
D
E
F
G
H
J
K
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
Suggested Solder
Pad Layout
.031
.800
Maximum Reverse
0.1
A
Voltage Leakage
I
R
Current
Maximum Junction
2.5pF
C
J
Capacitance
Maximum Reverse
T
rr
4.0nS
Recovery Time
1) FR-5=1.0 × 0.75 × 0.062 in.
Alumina=0.4 × 0.3 × 0.024 in. 99.5
alumina.
&
www.mccsemi.com
MMBD6100
820
Ω
+10 V
2.0 k
100
µH
0.1
µF
DUT
50
Ω
OUTPUT
PULSE
GENERATOR
50
Ω
INPUT
SAMPLING
OSCILLOSCOPE
V
R
INPUT SIGNAL
90%
I
F
0.1
µF
t
r
10%
t
p
t
MCC
I
F
t
rr
t
i
R(REC)
= 1.0 mA
OUTPUT PULSE
(I
F
= I
R
= 10 mA; MEASURED
at i
R(REC)
= 1.0 mA)
I
R
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I
F
) of 10 mA.
Notes:
2. Input pulse is adjusted so I
R(peak)
is equal to 10 mA.
Notes:
3. t
p
» t
rr
Figure 1. Recovery Time Equivalent Test Circuit
100
I F, FORWARD CURRENT (mA)
T
A
= 85°C
10
10
T
A
= 150°C
I R , REVERSE CURRENT (
m
A)
T
A
= –40°C
1.0
T
A
= 125°C
T
A
= 25°C
1.0
0.1
T
A
= 85°C
T
A
= 55°C
0.01
T
A
= 25°C
0.1
0.2
0.4
0.6
0.8
1.0
1.2
V
F
, FORWARD VOLTAGE (VOLTS)
0.001
0
10
20
30
40
50
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 2. Forward Voltage
Figure 3. Leakage Current
1.0
CD, DIODE CAPACITANCE (pF)
0.9
0.8
0.7
0.6
0
2
4
6
8
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
www.mccsemi.com
京公网安备 11010802033920号
EEWORLD
