MMBD1701/A / 1703/A / 1704/A / 1705/A
Discrete POWER & Signal
Technologies
MMBD1701/A / 1703/A / 1704/A / 1705/A
3
CONNECTION DIAGRAMS
3
1
85
2
1701
3
3
1703
1
2 NC
3
1
3
2
2
1704
1705
SOT-23
1
MMBD1701
MMBD1703
MMBD1704
MMBD1705
MARKING
85
MMBD1701A
87
MMBD1703A
88
MMBD1704A
89
MMBD1705A
85A
87A
88A
89A
1
2
1
2
High Conductance Low Leakage Diode
Sourced from Process 1T.
Absolute Maximum Ratings*
Symbol
W
IV
I
O
I
F
i
f
i
f(surge)
T
stg
T
J
Working Inverse Voltage
Average Rectified Current
DC Forward Current
Recurrent Peak Forward Current
Peak Forward Surge Current
Pulse width = 1.0 second
Storage Temperature Range
Operating Junction Temperature
TA = 25°C unless otherwise noted
Parameter
Value
20
50
150
150
250
-55 to +150
150
Units
V
mA
mA
mA
mA
°C
°C
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
Thermal Characteristics
Symbol
P
D
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Max
MMBD1701/A /1703/A-1705/A*
350
2.8
357
Units
mW
mW/°C
°C/W
*
Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2
©1997
Fairchild Semiconductor Corporation
MMBD1700 Rev. B
MMBD1701/A / 1703/A / 1704/A / 1705/A
High Conductance Low Leakage Diode
(continued)
Electrical Characteristics
Symbol
B
V
I
R
V
F
TA = 25°C unless otherwise noted
Parameter
Breakdown Voltage
Reverse Current
Forward Voltage
Test Conditions
I
R
= 5.0
µA
V
R
= 20 V
I
F
= 10
µA
I
F
= 100
µA
I
F
= 1.0 mA
I
F
= 10 mA
I
F
= 20 mA
I
F
= 50 mA
V
R
= 0, f = 1.0 MHz
I
F
= I
R
= 10 mA I
RR
= 1.0 mA,
R
L
= 100Ω
I
F
= I
R
= 10 mA I
RR
= 1.0 mA,
R
L
= 100Ω
Min
30
Max
50
Units
V
nA
mV
mV
mV
mV
mV
V
pF
pS
nS
420
520
640
760
810
0.89
C
O
T
RR
Diode Capacitance
Reverse Recovery Time
MMBD1701-1705
MMBD1701A-1705A
500
610
740
880
950
1.1
1.0
700
1.0
Typical Characteristics
REVERSE VOLTAGE vs REVERSE CURRENT
BV - 1.0 to 100 uA
V
R
- REVERSE VOLTAGE (V)
60
Ta= 25°C
REVERSE CURRENT vs REVERSE VOLTAGE
IR - 1 to 22 V
I
I
R
- REVERSE CURRENT (nA)
R
10
Ta= 25°C
5
50
0
1
40
1
2
3
5
10
20 30
I
R
- REVERSE CURRENT (uA)
50
100
2
3
5
10
V
R
- REVERSE VOLTAGE (V)
20
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten (10) Degree C increase in Temperature
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 1.0 to 100 uA
V
F
- FORWARD VOLTAGE (mV)
600
550
500
450
400
350
300
1
2
3
5
10
20 30
50
I
F
- FORWARD CURRENT (uA)
100
Ta= 25°C
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 0.1 to 10 mA
V
F
- FORWARD VOLTAGE (mV)
850
800
750
700
650
600
550
0.1
0.2 0.3 0.5
1
2 3
5
I
F
- FORWARD CURRENT (mA)
10
Ta= 25°C
MMBD1701/A / 1703/A / 1704/A / 1705/A
High Conductance Low Leakage Diode
(continued)
Typical Characteristics
(continued)
FORWARD VOLTAGE vs FORWARD CURRENT
VF - 10 - 200 mA
V
F
- FORWARD VOLTAGE (V)
1.6
Ta= 25°C
CAPACITANCE vs REVERSE CURRENT
VR - 0 to 15 V
1
CAPACITANCE (pF)
0.9
0.8
0.7
0.6
0.5
Ta= 25°C
1.4
1.2
1
0.8
10
20
30
50
100
I
F
- FORWARD CURRENT (mA)
200
0
2
4
6
8
10
REVERSE VOLTAGE (V)
12
14
P - POWER DISSIPATION (mW)
D
Power Dissipation,
Average Rectified Current (Io),
Forward Current (I
F
) & Ambient Temperature (T )
A
P
D
- POWER DISSIPATION (mW)
250
P
D
Power Derating Curve
350
300
250
200
150
100
50
0
0
25
50
75
100 125 150
Io - AVERAGE TEMPERATURE
175
200
DO-7
SOT-23
200
I
R
-P
OW
150
100
50
0
DI
-C
SS
ON
IPA
TIN
OU
TI
ON
SF
OR
-m
WA
W
RD
CU
RR
EN
T-
Io - AVE
mA
RAGE R
ECTIFIE
D CURR
ENT - m
A
ER
0
25
50
75
100
125
150
o
T
A
- AMBIENT TEMPERATURE ( C)
175
Embedded System
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