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MT45W4ML16PFA-85IT

Description
Pseudo Static RAM, 4MX16, 85ns, CMOS, PBGA48, FBGA-48
Categorystorage    storage   
File Size331KB,25 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Download Datasheet Parametric View All

MT45W4ML16PFA-85IT Overview

Pseudo Static RAM, 4MX16, 85ns, CMOS, PBGA48, FBGA-48

MT45W4ML16PFA-85IT Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerMicron Technology
Parts packaging codeBGA
package instructionFBGA-48
Contacts48
Reach Compliance Code_compli
ECCN code3A991.B.2.A
Maximum access time85 ns
I/O typeCOMMON
JESD-30 codeR-PBGA-B48
JESD-609 codee0
length8 mm
memory density67108864 bi
Memory IC TypePSEUDO STATIC RAM
memory width16
Number of functions1
Number of terminals48
word count4194304 words
character code4000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize4MX16
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeVFBGA
Encapsulate equivalent codeBGA48,6X8,30
Package shapeRECTANGULAR
Package formGRID ARRAY, VERY THIN PROFILE, FINE PITCH
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)235
power supply1.8,3 V
Certification statusNot Qualified
Maximum seat height1 mm
Maximum standby current0.00012 A
Maximum slew rate0.02 mA
Maximum supply voltage (Vsup)1.95 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formBALL
Terminal pitch0.75 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
width6 mm
PRELIMINARY
4 MEG x 16, 2 MEG x 16
ASYNC/PAGE CellularRAM MEMORY
ASYNCHRONOUS
CellularRAM
TM
Features
• Asynchronous and Page Mode interface
• Random Access Time: 70ns, 85ns
• Page Mode Read Access
Sixteen-word page size
Interpage read access: 70ns, 85ns
Intrapage read access: 20ns, 25ns
• V
CC
, V
CC
Q Voltages
1.70V–1.95V V
CC
1.70V–2.25V V
CC
Q (Option W)
2.30V–2.70V V
CC
Q (Option V)
2.70V–3.30V V
CC
Q (Option L)
• Low Power Consumption
Asynchronous READ < 25mA
Intrapage READ < 15mA
Standby: 120µA (64Mb), 110µA (32Mb)—standard
100µA (64Mb), 90µA (32Mb)—low-power option
Deep Power-Down < 10µA
• Low-Power Features
Temperature Compensated Refresh (TCR)
Partial Array Refresh (PAR)
Deep Power-Down (DPD) Mode
MT45W4MW16PFA
MT45W4ML16PFA
MT45W2MW16PFA
MT45W2ML16PFA
Figure 1: 48-Ball VFBGA
1
A
B
C
D
E
F
G
H
LB#
2
OE#
3
A0
4
A1
5
A2
6
ZZ#
DQ8
UB#
A3
A4
CE#
DQ0
DQ9
DQ10
A5
A6
DQ1
DQ2
V
SS
Q
DQ11
A17
A7
DQ3
V
CC
V
CC
Q
DQ12
A21
A16
DQ4
V
SS
DQ14
DQ13
A14
A15
DQ5
DQ6
DQ15
A19
A12
A13
WE#
DQ7
A18
A8
A9
A10
A11
A20
Top View
(Bump Down)
Options
• Configuration
4 Meg x 16
2 Meg x 16
V
CC
Core Voltage Supply
1.8V – MT45WxMx16PFA
V
CC
Q I/O Voltage
3.0V – MT45WxML16PFA
2.5V – MT45WxMV16PFA
1.8V – MT45WxMW16PFA
• Package
48-ball VFBGA
48-ball VFBGA—Lead-free
• Access Time
60ns
70ns
85ns
Designator
NOTE:
MT45W4Mx16P
MT45W2Mx16P
W
L
V
1
W
FA
BA
1
-60
1
-70
-85
See Table 1 on page 3 for Ball Descriptions. See Figure 22
on page 24 for the 48-ball mechanical drawing.
Options (continued)
• Standby Power
Standard
Low Power
• Operating Temperature Range
Wireless (-25°C to +85°C)
Industrial (-40°C to +85°C)
Designator
None
L
WT
IT
1
Part Number Example:
NOTE:
MT45W2ML16PFA-70LWT
1. Contact factory.
09005aef80be1ee8
AsyncCellularRAM.fm - Rev. B 5/19/04 EN
1
©2004 Micron Technology, Inc. All Rights Reserved.
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE FOR EVALUATION AND REFERENCE PURPOSES ONLY AND ARE SUBJECT TO CHANGE BY
MICRON WITHOUT NOTICE. PRODUCTS ARE ONLY WARRANTED BY MICRON TO MEET MICRON’S PRODUCTION DATA SHEET SPECIFICATIONS.
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