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1N5709AB

Description
Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 82pF C(T), 65V, Silicon, Abrupt, DO-14, DO-14, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size68KB,1 Pages
ManufacturerAPI Technologies
Websitehttp://www.apitech.com/about-api
Download Datasheet Parametric View All

1N5709AB Overview

Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 82pF C(T), 65V, Silicon, Abrupt, DO-14, DO-14, 2 PIN

1N5709AB Parametric

Parameter NameAttribute value
Parts packaging codeDO-14
package instructionO-LALF-W2
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresSUPER Q
Minimum breakdown voltage65 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode Capacitance Tolerance5%
Minimum diode capacitance ratio3.2
Nominal diode capacitance82 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandVERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JEDEC-95 codeDO-14
JESD-30 codeO-LALF-W2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Maximum power dissipation0.5 W
Certification statusNot Qualified
minimum quality factor150
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Varactor Diode ClassificationABRUPT
Base Number Matches1
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