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MM118-06F

Description
3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE
CategoryDiscrete semiconductor    The transistor   
File Size76KB,3 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric Compare View All

MM118-06F Overview

3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE

MM118-06F Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerMicrosemi
Parts packaging codeMODULE
package instructionHERMETIC SEALED, POWER MODULE-16
Contacts16
Reach Compliance Codeunknow
Other featuresFAST SWITCHING
Shell connectionISOLATED
Maximum collector current (IC)60 A
Collector-emitter maximum voltage600 V
ConfigurationBRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
Gate-emitter maximum voltage20 V
JESD-30 codeR-XUFM-X16
JESD-609 codee0
Number of components6
Number of terminals16
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)165 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)300 ns
Nominal on time (ton)55 ns
VCEsat-Max2.9 V
2830 S. Fairview St.
Santa Ana, CA 92704
PH: (714) 979-8220
FAX: (714) 966-5256
Features
Available in Low Conduction Loss Class as MM118-xxL or Fast
Switching Class as MM118-xxF
Compact and rugged construction offering weight and space savings
Available with PC board solderable pins (see mechanical outline below)
or threaded terminals (add “ suffix to part number, see option below)
T”
HPM (Hermetic Power Module)
Isolation voltage capability (in reference to the base) in excess of 3kV
Very low thermal resistance
Thermally matched construction provides excellent temperature and
power cycling capability
Additional voltage ratings or terminations available upon request
PART NUMBER
Collector-to-Emitter Breakdown Voltage (Gate shorted to
Emitter), @ T
j
25°
C
Collector-to-Gate Breakdown Voltage @ T
j
25° R
GS
= 1
C,
MΩ
Gate-to-Emitter Voltage
continuous
transient
Continuous Collector Current
T
j
=
25°
C
T
j
= 90°
C
Peak Collector Current, pulsewidth limited by T
j max
Power Dissipation
Thermal resistance, junction to base
per switch
SYMBOL
BV
CES
BV
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
P
D
jc
, max
RΘ , typ
MM118-XX
SERIES
600 / 1200 Volts
150 Amps
3 PHASE N-CHANNEL
INSULATED GATE
BIPOLAR
TRANSISTOR (IGBT)
BRIDGE
MM118-06
600 V
600 V
+/- 20 V
+/- 30 V
60 A
32 A
120 A
165 W
0.75°
C/W
0.5°
C/W
MM118-12
1200 V
1200 V
+/- 20 V
+/- 30 V
52 A
33 A
104 A
165 W
0.75°
C/W
0.5°
C/W
Maximum Ratings per switch @ 25° (unless otherwise specified)
C
Mechanical Outline
Datasheet# MSC0321A

MM118-06F Related Products

MM118-06F MM118-XX MM118-12 MM118-06L MM118-06 MM018-06L
Description 3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE 3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE 3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE 3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE 3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE 3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE
Is it lead-free? Contains lead - Contains lead Contains lead Contains lead -
Is it Rohs certified? incompatible - incompatible incompatible incompatible -
Maker Microsemi - Microsemi Microsemi Microsemi -
Parts packaging code MODULE - MODULE MODULE MODULE -
package instruction HERMETIC SEALED, POWER MODULE-16 - HERMETIC SEALED, POWER MODULE-16 HERMETIC SEALED, POWER MODULE-16 FLANGE MOUNT, R-XUFM-X16 -
Contacts 16 - 16 16 16 -
Reach Compliance Code unknow - unknow unknow unknow -
Shell connection ISOLATED - ISOLATED ISOLATED ISOLATED -
Maximum collector current (IC) 60 A - 52 A 60 A 60 A -
Collector-emitter maximum voltage 600 V - 1200 V 600 V 600 V -
Configuration BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE - BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE -
JESD-30 code R-XUFM-X16 - R-XUFM-X16 R-XUFM-X16 R-XUFM-X16 -
JESD-609 code e0 - e0 e0 e0 -
Number of components 6 - 6 6 6 -
Number of terminals 16 - 16 16 16 -
Maximum operating temperature 150 °C - 150 °C 150 °C 150 °C -
Package body material UNSPECIFIED - UNSPECIFIED UNSPECIFIED UNSPECIFIED -
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR RECTANGULAR -
Package form FLANGE MOUNT - FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT -
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
Polarity/channel type N-CHANNEL - N-CHANNEL N-CHANNEL N-CHANNEL -
Certification status Not Qualified - Not Qualified Not Qualified Not Qualified -
surface mount NO - NO NO NO -
Terminal surface TIN LEAD - TIN LEAD TIN LEAD TIN LEAD -
Terminal form UNSPECIFIED - UNSPECIFIED UNSPECIFIED UNSPECIFIED -
Terminal location UPPER - UPPER UPPER UPPER -
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED -
Transistor component materials SILICON - SILICON SILICON SILICON -
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