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CY15B108QI-20LPXIT

Description
Memory Circuit,
Categorystorage    storage   
File Size356KB,27 Pages
ManufacturerCypress Semiconductor
Environmental Compliance
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CY15B108QI-20LPXIT Overview

Memory Circuit,

CY15B108QI-20LPXIT Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerCypress Semiconductor
package instructionVSON,
Reach Compliance Codecompliant
JESD-30 codeR-PDSO-N8
length3.28 mm
memory density8388608 bit
Memory IC TypeMEMORY CIRCUIT
memory width8
Number of functions1
Number of terminals8
word count1048576 words
character code1000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize1MX8
Package body materialPLASTIC/EPOXY
encapsulated codeVSON
Package shapeRECTANGULAR
Package formSMALL OUTLINE, VERY THIN PROFILE
Maximum seat height0.55 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)1.8 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formNO LEAD
Terminal pitch0.65 mm
Terminal locationDUAL
width3.23 mm
Base Number Matches1
CY15B108QI
CY15V108QI
Excelon™ LP 8-Mbit (1024K × 8)
Serial (SPI) F-RAM
CY15B108QI/CY15V108QI, Excelon™ LP 8-Mbit (1024K × 8) Serial (SPI) F-RAM
Features
Functional Description
The Excelon LP CY15X108QI is a low power, 8-Mbit nonvolatile
memory employing an advanced ferroelectric process. A ferro-
electric random access memory or F-RAM is nonvolatile and
performs reads and writes similar to a RAM. It provides reliable
data retention for 151 years while eliminating the complexities,
overhead, and system-level reliability problems caused by serial
flash, EEPROM, and other nonvolatile memories.
Unlike serial flash and EEPROM, the CY15X108QI performs
write operations at bus speed. No write delays are incurred. Data
is written to the memory array immediately after each byte is
successfully transferred to the device. The next bus cycle can
commence without the need for data polling. In addition, the
product offers substantial write endurance compared to other
nonvolatile memories. The CY15X108QI is capable of
supporting 10
15
read/write cycles, or 1000 million times more
write cycles than EEPROM.
These capabilities make the CY15X108QI ideal for nonvolatile
memory applications, requiring frequent or rapid writes.
Examples range from data collection, where the number of write
cycles may be critical, to demanding industrial controls where the
long write time of serial flash or EEPROM can cause data loss.
The CY15X108QI provides substantial benefits to users of serial
EEPROM or flash as a hardware drop-in replacement. The
CY15X108QI uses the high-speed SPI bus, which enhances the
high-speed write capability of F-RAM technology. The device
incorporates a read-only Device ID and Unique ID features,
which allow the host to determine the manufacturer, product
density, product revision, and unique ID for each part. The device
also provides a writable, 8-byte serial number registers, which
can be used to identify a specific board or a system.
For a complete list of related resources,
click here.
8-Mbit ferroelectric random access memory (F-RAM) logically
organized as 1024K × 8
15
Virtually unlimited endurance 1000 trillion (10 ) read/writes
151-year data retention (See
Data Retention and Endurance
on page 19)
NoDelay™ writes
Advanced high-reliability ferroelectric process
Fast serial peripheral interface (SPI)
Up to 20 MHz frequency
Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
Sophisticated write protection scheme
Hardware protection using the Write Protect (WP) pin
Software protection using Write Disable (WRDI) instruction
Software block protection for 1/4, 1/2, or entire array
Device ID and Serial Number
Manufacturer ID and Product ID
Unique Device ID
Serial Number
Dedicated 256-byte special sector F-RAM
Dedicated special sector write and read
Stored content can survive up to three standard reflow sol-
dering cycles
Low-power consumption
1.3 mA (typ) active current at 20 MHz
3.5 µA (typ) standby current
0.90 µA (typ) Deep Power Down mode current
0.1 µA (typ) Hibernate mode current
1.6 mA (typ) inrush current during power up
Low-voltage operation
CY15V108QI: V
DD
= 1.71 V to 1.89 V
CY15B108QI: V
DD
= 1.8 V to 3.6 V
Commercial and industrial operating temperature
Commercial operating temperature: 0 °C to +70 °C
Industrial operating temperature:
40
°C to +85 °C
8-pin Grid-Array Quad Flat No-Lead (GQFN) package
Restriction of hazardous substances (RoHS) compliant
Cypress Semiconductor Corporation
Document Number: 002-18148 Rev. *M
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised July 15, 2019

CY15B108QI-20LPXIT Related Products

CY15B108QI-20LPXIT HC12197KK0R HC12197KK0U
Description Memory Circuit, Headers and Edge Type Connector, Headers and Edge Type Connector,
Reach Compliance Code compliant unknown unknown
Objectid - 145070372145 145070372146
ECCN code - EAR99 EAR99
YTEOL - 2 2

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