ML60115R datasheet, PDF - EEWORLD Datasheet

ML60115R: DescriptionAIGaAs LASER DIODES　; CategoryLED optoelectronic/LED photoelectric; File Size89KB，3 Pages; ManufacturerMitsubishi; Websitehttp://www.mitsubishielectric.com/semiconductors/

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ML60115R Overview

AIGaAs LASER DIODES　

Parameter Name	Attribute value
Maker	Mitsubishi
Reach Compliance Code	unknow
Other features	HIGH RELIABILITY
Configuration	SINGLE WITH BUILT-IN PHOTO DIODE
Maximum forward current	0.01 A
Maximum forward voltage	2.5 V
Installation features	THROUGH HOLE MOUNT
Number of functions	1
Maximum operating temperature	60 °C
Minimum operating temperature	-40 °C
Optoelectronic device types	LASER DIODE
Nominal output power	30 mW
peak wavelength	785 nm
Semiconductor material	AlGaAs
shape	ROUND
size	1.6 mm
surface mount	NO
Maximum threshold current	55 mA

	ML60115R	ML6XX15
Description	AIGaAs LASER DIODES	AIGaAs LASER DIODES

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