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1N5461BCO

Description
Variable Capacitance Diode, 6.8pF C(T), 30V, Silicon, DIE-1
CategoryDiscrete semiconductor    diode   
File Size45KB,1 Pages
ManufacturerCobham Semiconductor Solutions
Download Datasheet Parametric View All

1N5461BCO Overview

Variable Capacitance Diode, 6.8pF C(T), 30V, Silicon, DIE-1

1N5461BCO Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Parts packaging codeDIE
package instructionX-XUUC-N
Contacts1
Reach Compliance Codeunknow
ECCN codeEAR99
Minimum breakdown voltage30 V
ConfigurationSINGLE
Diode Capacitance Tolerance5%
Minimum diode capacitance ratio2.7
Nominal diode capacitance6.8 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JESD-30 codeX-XUUC-N
JESD-609 codee0
Number of components1
Package body materialUNSPECIFIED
Package shapeUNSPECIFIED
Package formUNCASED CHIP
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
minimum quality factor600
surface mountYES
Terminal surfaceTIN LEAD
Terminal formNO LEAD
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
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