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ML40126N

Description
FOR OPTICAL INFORMATION SYSTEMS
CategoryLED optoelectronic/LED    photoelectric   
File Size50KB,4 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
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ML40126N Overview

FOR OPTICAL INFORMATION SYSTEMS

ML40126N Parametric

Parameter NameAttribute value
MakerMitsubishi
Reach Compliance Codeunknow
Other featuresHIGH RELIABILITY
ConfigurationSINGLE WITH BUILT-IN PHOTO DIODE
Maximum forward current0.01 A
Maximum forward voltage2.5 V
Installation featuresTHROUGH HOLE MOUNT
Number of functions1
Maximum operating temperature60 °C
Minimum operating temperature-40 °C
Optoelectronic device typesLASER DIODE
Nominal output power5 mW
peak wavelength785 nm
Semiconductor materialAlGaAs
shapeROUND
size1.6 mm
surface mountNO
Maximum threshold current40 mA
Base Number Matches1
ML4XX26 SERIES
ML40126N
ML44126N,ML44126R
FEATURES
Output 5mW(CW)
Built-in monitor photodiode
Low droop
APPLICATION
Laser Beam Printing, Digital Copy
MITSUBISHI LASER DIODES
FOR OPTICAL INFORMATION SYSTEMS
TYPE
NAME
FEATURES
ML4xx26 series is AlGaAs laser diodes which
provide a stable, single transverse mode ocillation
with emission wavelength of 785nm and standard
continuous light output of 5mW.
ML4xx26 are hermetically sealed devices having
the photodiode for optical output monitoring.
ML4xx26 is produced by the MOCVD crystal
growth method which is excellent in mass production
and characteristics uniformity.
ABSOLUTE MAXIMUM RATINGS
(Note 1)
Symbol
Po
VRL
VRD
IFD
Tc
Tstg
Parameter
Light output power
Reverse voltage (laser diode)
Reverse voltage (Photodiode)
Forward current (Photodiode)
Case temperature
Storage temperature
Conditions
CW
-
-
-
-
-
Ratings
8
2
30
10
-40~ +60
-40~ +100
Unit
mW
V
V
mA
°C
°C
Note1: The maximum rating means the limitation over which the laser should not be operated even instant time,
and this does not mean the guarantee of its lifetime.As for the reliability,please refer to the reliability report from Mitsubishi
Semiconductor Quality Assurance Department.
ELECTRICAL / OPTICAL CHARACTERISTICS (Tc=25°C)
Symbol
Ith
Iop
η
Vop
λp
Parameter
Threshold current
Operation current
Slope efficiency
Operating voltage
Peak wavelength
Beam divergence angle
(parallel)
Beam divergence angle
(perpendicular)
Monitoring output current
(Photodiode)
Dark current (Photodiode)
Capacitance (Photodiode)
Droop
Test conditions
CW
CW,Po=5mW
CW,Po=5mW
CW,Po=5mW
CW,Po=5mW
CW,Po=5mW
CW,Po=5mW
CW,Po=5mW, V
RD=
1V
R
L
=10Ω(Note3)
V
RD
=10V
V
RD
=5V, f=1MHz
CW,Po=3mW
MIn
-
-
0.25
-
770
8
22
-
-
-
-
-
Typ.
25
40
0.35
2
785
11
29
0.45
0.90
-
7
6
Max
40
70
0.45
2.5
800
15
36
-
-
0.5
-
-
Unit
mA
mA
mW/mA
V
nm
θ
//
θ
Im
Im(Note2)
ID
Ct
D
°
°
mA
µA
pF
%
Note 2: Applicable to ML44126R and ML44126N
Note 3: RL=the load resistance of photodiode
MITSUBISHI
ELECTRIC
(1/4)
as of February '00

ML40126N Related Products

ML40126N ML4XX26 ML44126R
Description FOR OPTICAL INFORMATION SYSTEMS FOR OPTICAL INFORMATION SYSTEMS FOR OPTICAL INFORMATION SYSTEMS

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