EEWORLDEEWORLDEEWORLD

Part Number

Search

1N5451B

Description
Variable Capacitance Diode, 39pF C(T), 30V, Silicon, Abrupt, DO-7
CategoryDiscrete semiconductor    diode   
File Size206KB,2 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

1N5451B Overview

Variable Capacitance Diode, 39pF C(T), 30V, Silicon, Abrupt, DO-7

1N5451B Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
package instructionO-LALF-W2
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Minimum breakdown voltage30 V
ConfigurationSINGLE
Diode Capacitance Tolerance5%
Minimum diode capacitance ratio2.6
Nominal diode capacitance39 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JEDEC-95 codeDO-7
JESD-30 codeO-LALF-W2
JESD-609 codee0
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.4 W
Certification statusNot Qualified
minimum quality factor300
surface mountNO
Terminal surfaceTIN LEAD
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Varactor Diode ClassificationABRUPT
Base Number Matches1

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1937  1079  2231  2246  433  39  22  45  46  9 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号