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ML120G14

Description
FOR OPTICAL INFORMATION SYSTEM 
CategoryLED optoelectronic/LED    photoelectric   
File Size67KB,5 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
Download Datasheet Parametric Compare View All

ML120G14 Overview

FOR OPTICAL INFORMATION SYSTEM 

ML120G14 Parametric

Parameter NameAttribute value
MakerMitsubishi
Reach Compliance Codeunknow
Is SamacsysN
Other featuresHIGH RELIABILITY
ConfigurationSINGLE
Maximum forward voltage3 V
Installation featuresTHROUGH HOLE MOUNT
Number of functions1
Maximum operating temperature60 °C
Minimum operating temperature-10 °C
Optoelectronic device typesLASER DIODE
Nominal output power60 mW
peak wavelength660 nm
Semiconductor materialAlGaInP
shapeROUND
size1.6 mm
surface mountNO
Maximum threshold current57 mA
Base Number Matches1
Und
ment
velop
er De
MITSUBISHI LASER DIODES
nary
limi
Pre
ML1XX14 SERIES
FOR OPTICAL INFORMATION SYSTEMS
TYPE
NAME
ML101J14, ML120G14
This Model is under development. Therefore, please note that this data sheet may be
changed without any notice.
DESCRIPTION
ML1XX14 is a high power AlGaInP semiconductor laser which
provides a stable, single transverse mode
oscillation with
FEATURES
High Output Power: 50mW (CW) , 70mW (Pulse)
660nm (typ.)
Visible Light:
emission wavelength of 660 nm and standard PULSE light
output of 70mW.
ML1XX14 has a window-mirror-facet which improves the
maximum output power. That leads to highly reliable and high-
power operation.
APPLICATION
High-Density Optical Disc Drives
Rewritable
DVD(Digital Versatile Disc) Drives
ABSOLUTE MAXIMUM RATINGS
Symbol
Po
VRL
Tc
Tstg
Parameter
Note 1)
Conditions
CW
Ratings
60
70
2
-10
~
+60
-40
~
+100
mW
V
°C
°C
Unit
Light output power
Reverse voltage
Case temperature
Storage temperature
Pulse(Note 2)
-
-
-
Note1: The maximum rating means the limitation over which the laser should not be operated even instant time,
and this does not mean the guarantee of its lifetime. As for the reliability,please refer to the reliability report from Mitsubishi
Semiconductor Quality Assurance Section.
Note2: TARGET SPEC /Condition Duty less than 50%,pulse width less than 0.1µs
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25°C)
Symbol
Parameter
Threshold current
Operating current
Operating voltage
Slope efficiency
Peak wavelength
Beam divergence angle
(parallel)
Beam divergence angle
(perpendicular)
Test conditions
CW
CW, Po=50mW
CW, Po=50mW
CW, Po=50mW
CW, Po=50mW
CW, Po=50mW
CW, Po=50mW
Min.
-
-
-
-
655
-
-
Typ.
57
132
2.5
0.67
660
8.5
22
Max
-
-
3.0
-
666
-
-
Unit
mA
mA
V
mW/mA
nm
°
°
I
th
I
op
V
op
η
λ
p
θ
//
θ
MITSUBISHI
ELECTRIC
(1/5)
as of December '99

ML120G14 Related Products

ML120G14 ML1XX14 ML101J14
Description FOR OPTICAL INFORMATION SYSTEM  FOR OPTICAL INFORMATION SYSTEM  FOR OPTICAL INFORMATION SYSTEM 
Maker Mitsubishi - Mitsubishi
Reach Compliance Code unknow - unknow
Other features HIGH RELIABILITY - HIGH RELIABILITY
Configuration SINGLE - SINGLE
Maximum forward voltage 3 V - 3 V
Installation features THROUGH HOLE MOUNT - THROUGH HOLE MOUNT
Number of functions 1 - 1
Maximum operating temperature 60 °C - 60 °C
Minimum operating temperature -10 °C - -10 °C
Optoelectronic device types LASER DIODE - LASER DIODE
Nominal output power 60 mW - 60 mW
peak wavelength 660 nm - 660 nm
Semiconductor material AlGaInP - AlGaInP
shape ROUND - ROUND
size 1.6 mm - 1.6 mm
surface mount NO - NO
Maximum threshold current 57 mA - 57 mA

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