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MJL1302

Description
15 A, 200 V, PNP, Si, POWER TRANSISTOR, TO-264AA
Categorysemiconductor    Discrete semiconductor   
File Size124KB,6 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
Download Datasheet Parametric Compare View All

MJL1302 Overview

15 A, 200 V, PNP, Si, POWER TRANSISTOR, TO-264AA

MJL1302 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityPNP
Maximum collector current15 A
Maximum Collector-Emitter Voltage200 V
Processing package descriptionCASE 340G-02, 3 PIN
stateTRANSFERRED
packaging shapeRECTANGULAR
Package SizeFLANGE MOUNT
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE
Number of components1
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Transistor typeGENERAL PURPOSE POWER
Minimum DC amplification factor12
Rated crossover frequency30 MHz
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJL3281A/D
Designer's
Complementary NPN-PNP
Silicon Power Bipolar Transistor
The MJL3281A and MJL1302A are PowerBase power transistors for high power
audio, disk head positioners and other linear applications.
Designed for 100 W Audio Frequency
Gain Complementary:
— Gain Linearity from 100 mA to 7 A
— High Gain — 60 to 175
— hFE = 45 (Min) @ IC = 8 A
Low Harmonic Distortion
High Safe Operation Area — 1 A/100 V @ 1 sec
High fT — 30 MHz Typical
Data Sheet
MJL3281A*
PNP
MJL1302A*
*Motorola Preferred Device
NPN
15 AMPERE
COMPLEMENTARY
SILICON POWER
TRANSISTORS
200 VOLTS
200 WATTS
CASE 340G–02, STYLE 2
TO–264
MAXIMUM RATINGS
(TJ = 25°C unless otherwise noted)
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector–Emitter Voltage — 1.5 V
Collector Current — Continuous
Collector Current
— Peak (1)
Base Current — Continuous
Total Power Dissipation @ TC = 25°C
Derate Above 25°C
Operating and Storage Junction Temperature Range
Symbol
VCEO
VCBO
VEBO
VCEX
IC
IB
PD
TJ, Tstg
Value
200
200
7
200
15
25
1.5
200
1.43
– 65 to +150
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle <10%.
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Symbol
R
θJC
Max
0.7
Unit
°C/W
Designer’s is a trademark of Motorola, Inc.
Preferred
devices are Motorola recommended choices for future use and best overall value.
©
Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
1

MJL1302 Related Products

MJL1302 MJL3281
Description 15 A, 200 V, PNP, Si, POWER TRANSISTOR, TO-264AA 15 A, 200 V, PNP, Si, POWER TRANSISTOR, TO-264AA
Number of terminals 3 3
Transistor polarity PNP PNP
Maximum collector current 15 A 15 A
Maximum Collector-Emitter Voltage 200 V 200 V
Processing package description CASE 340G-02, 3 PIN CASE 340G-02, 3 PIN
state TRANSFERRED TRANSFERRED
packaging shape RECTANGULAR RECTANGULAR
Package Size FLANGE MOUNT FLANGE MOUNT
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Packaging Materials PLASTIC/EPOXY PLASTIC/EPOXY
structure SINGLE SINGLE
Number of components 1 1
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Transistor type GENERAL PURPOSE POWER GENERAL PURPOSE POWER
Minimum DC amplification factor 12 12
Rated crossover frequency 30 MHz 30 MHz
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