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BSS138PW115

Description
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 0.10uF 25volt X5R +/-10%
Categorysemiconductor    Discrete semiconductor   
File Size712KB,16 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 0.10uF 25volt X5R +/-10%

BSS138PW115 Parametric

Parameter NameAttribute value
Product CategoryMOSFET
ManufacturerNXP
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSOT-323-3
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage60 V
Id - Continuous Drain Current320 mA
Rds On - Drain-Source Resistance1.6 Ohms
Qg - Gate Charge800 pC
ConfigurationSingle
PackagingReel
PackagingMouseReel
PackagingCut Tape
Forward Transconductance - Min700 mS
Pd - Power Dissipation260 mW
ProductMOSFET Small Signal
Factory Pack Quantity3000
Transistor Type1 N-Channel
Unit Weight0.000176 oz
BSS138PW
60 V, 320 mA N-channel Trench MOSFET
Rev. 1 — 2 November 2010
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a very small
SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features and benefits
Logic-level compatible
Very fast switching
Trench MOSFET technology
AEC-Q101 qualified
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1.
Symbol
V
DS
V
GS
I
D
R
DSon
Quick reference data
Parameter
drain-source voltage
gate-source voltage
drain current
drain-source on-state
resistance
Conditions
T
amb
= 25
°C
T
amb
= 25
°C
T
amb
= 25
°C;
V
GS
= 10 V
T
j
= 25
°C;
V
GS
= 10 V;
I
D
= 300 mA
[1]
Min
-
-
-
-
Typ
-
-
-
0.9
Max
60
±20
320
1.6
Unit
V
V
mA
[2]
[1]
[2]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad
for drain 1 cm
2
.
Pulse test: t
p
300
µs; δ ≤
0.01.
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