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BLS6G2933S-130

Description
RF MOSFET Transistors 130W, 2.9-3.3GHz Radar Appl.
CategoryDiscrete semiconductor    The transistor   
File Size123KB,13 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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BLS6G2933S-130 Overview

RF MOSFET Transistors 130W, 2.9-3.3GHz Radar Appl.

BLS6G2933S-130 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerNXP
package instructionROHS COMPLIANT, CERAMIC PACKAGE-2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage60 V
Maximum drain current (Abs) (ID)33 A
Maximum drain current (ID)33 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandS BAND
JESD-30 codeR-CDFP-F2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature225 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formFLATPACK
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
BLS6G2933S-130
LDMOS S-band radar power transistor
Rev. 03 — 3 March 2010
Product data sheet
1. Product profile
1.1 General description
130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz
range.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
°
C; t
p
= 300
μ
s;
δ
= 10 %; I
Dq
= 100 mA; in a class-AB
production test circuit.
Mode of operation
pulsed RF
f
(GHz)
2.9 to 3.3
V
DS
(V)
32
P
L
(W)
130
G
p
(dB)
12.5
η
D
(%)
47
t
r
(ns)
20
t
f
(ns)
6
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
Typical pulsed RF performance at a frequency of 2.9 GHz to 3.3 GHz, a supply voltage
of 32 V, an I
Dq
of 100 mA, a t
p
of 300
μs
with
δ
of 10 %:
Output power = 130 W
Power gain = 12.5 dB
Efficiency = 47 %
Easy power control
Integrated ESD protection
High flexibility with respect to pulse formats
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (2.9 GHz to 3.3 GHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
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