IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW
- For www.nxp.com use
www.ween-semi.com
Email
- For salesaddresses@nxp.com use
salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
BYC8X-600P
Hyperfast power diode
3 August 2015
Product data sheet
1. General description
Hyperfast power diode in a SOD113 (2-lead TO-220F) plastic package.
2. Features and benefits
•
•
•
•
•
•
Fast switching
Isolated plastic package
Low leakage current
Low reverse recovery current
Low thermal resistance
Reduces switching losses in associated MOSFET
3. Applications
•
•
Continuous Current Mode (CCM) Power Factor Correction (PFC)
Half-bridge/full-bridge switched-mode power supplies
4. Quick reference data
Table 1.
Symbol
V
RRM
I
F(AV)
I
FRM
I
FSM
Quick reference data
Parameter
repetitive peak reverse
voltage
average forward
current
δ = 0.5 ; T
h
≤ 75 °C; square-wave
pulse;
Fig. 1; Fig. 2; Fig. 3
-
-
-
-
-
-
16
91
100
A
A
A
Conditions
Min
-
-
Typ
-
-
Max
600
8
Unit
V
A
TO
-22
0
F
repetitive peak forward δ = 0.5 ; t
p
= 25 µs; T
h
≤ 75 °C; square-
current
wave pulse
non-repetitive peak
forward current
t
p
= 10 ms; T
j(init)
= 25 °C; sine-wave
pulse;
Fig. 4
t
p
= 8.3 ms; T
j(init)
= 25 °C; sine-wave
pulse;
Fig. 4
Static characteristics
V
F
forward voltage
I
F
= 8 A; T
j
= 25 °C;
Fig. 6
I
F
= 8 A; T
j
= 125 °C;
Fig. 6
I
F
= 8 A; T
j
= 150 °C
-
-
-
-
1.5
1.4
3.4
1.9
-
V
V
V
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NXP Semiconductors
BYC8X-600P
Hyperfast power diode
Symbol
t
rr
Parameter
reverse recovery time
Conditions
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 200 A/µs;
T
j
= 25 °C;
Fig. 7
I
F
= 8 A; V
R
= 400 V; dI
F
/dt = 500 A/µs;
T
j
= 25 °C;
Fig. 7
Min
-
-
Typ
12
19
Max
18
-
Unit
ns
ns
Dynamic characteristics
5. Pinning information
Table 2.
Pin
1
2
mb
Pinning information
Symbol Description
K
A
n.c.
cathode
anode
mounting base; isolated
Simplified outline
mb
Graphic symbol
K
A
001aaa020
1
2
TO-220F (SOD113)
6. Ordering information
Table 3.
Ordering information
Package
Name
BYC8X-600P
TO-220F
Description
plastic single-ended package; isolated heatsink
mounted; 1 mounting hole; 2-lead TO-220 "full pack"
Version
SOD113
Type number
7. Marking
Table 4.
Marking codes
Marking code
BYC8X-600P
Type number
BYC8X-600P
BYC8X-600P
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
3 August 2015
2 / 11
NXP Semiconductors
BYC8X-600P
Hyperfast power diode
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
Parameter
repetitive peak reverse voltage
crest working reverse voltage
reverse voltage
average forward current
repetitive peak forward current
non-repetitive peak forward
current
DC
δ = 0.5 ; T
h
≤ 75 °C; square-wave
pulse;
Fig. 1; Fig. 2; Fig. 3
δ = 0.5 ; t
p
= 25 µs; T
h
≤ 75 °C; square-
wave pulse
t
p
= 10 ms; T
j(init)
= 25 °C; sine-wave
pulse;
Fig. 4
t
p
= 8.3 ms; T
j(init)
= 25 °C; sine-wave
pulse;
Fig. 4
T
stg
T
j
24
P
tot
(W)
16
0.1
8
8
4
Conditions
Min
-
-
-
-
-
-
-
-65
-
Max
600
600
600
8
16
91
100
175
175
003aaj899
Unit
V
V
V
A
A
A
A
°C
°C
storage temperature
junction temperature
003aaj898
δ=1
0.5
20
P
tot
(W)
16
2.2
2.8
4.0
a = 1.57
1.9
0.2
12
0
0
4
8
I
F(AV)
(A)
12
0
0
2
4
6
I
F(AV)
(A)
8
Fig. 1.
Forward power dissipation as a function of
average forward current; square waveform;
maximum values
Fig. 2.
Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
BYC8X-600P
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
3 August 2015
3 / 11
NXP Semiconductors
BYC8X-600P
Hyperfast power diode
12
I
F(AV)
(A)
8
003aaj901
10
4
I
FSM
(A)
10
3
I
F
003aaj902
I
FSM
75 °C
t
t
p
T
j(init)
= 25 °C max
4
10
2
0
-50
0
50
100
150
200
T
h
(°C)
10
10
-5
10
-4
10
-3
t
p
(s)
10
-2
Fig. 3.
Average forward current as a function of
heatsink temperature; maximum values
Fig. 4.
Non-repetitive peak forward current as a
function of pulse width; square waveform;
maximum values
BYC8X-600P
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
3 August 2015
4 / 11
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