BC372, BC373
High Voltage
Darlington Transistors
NPN Silicon
Features
http://onsemi.com
COLLECTOR 3
BASE
2
Symbol
V
CEO
BC372
BC373
Collector −Base Voltage
BC372
BC373
Emitter−Base Voltage
Collector Current − Continuous
Total Power Dissipation @ T
A
= 25°C
Derate above T
A
= 25°C
Total Power Dissipation @ T
A
= 25°C
Derate above T
A
= 25°C
Operating and Storage Junction
Temperature Range
V
EBO
I
C
P
D
P
D
T
J
, T
stg
V
CES
100
80
12
1.0
625
5.0
1.5
12
−55 to +150
Vdc
Adc
mW
mW/°C
W
mW/°C
°C
3
STRAIGHT LEAD
BULK PACK
12
100
80
Vdc
TO−92
CASE 29
STYLE 1
1
Value
Unit
Vdc
EMITTER 1
•
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
3
BENT LEAD
TAPE & REEL
AMMO PACK
2
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
°C/W
°C/W
BC
37x
AYWW
G
G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
x
= 2 or 3
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
BC372G
BC373RL1
BC373RL1G
Package
TO−92
(Pb−Free)
TO−92
TO−92
(Pb−Free)
Shipping
†
5000 Units / Bulk
2000 / Tape & Reel
2000 / Tape & Reel
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2007
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
BC372/D
1
March, 2007 − Rev. 4
BC372, BC373
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(1)
(I
C
= 100
mAdc,
I
B
= 0)
Collector −Base Breakdown Voltage
(I
C
= 100
mAdc,
I
E
= 0)
Emitter −Base Breakdown Voltage
(I
E
= 10
mAdc,
I
C
= 0)
Collector Cutoff Current
(V
CB
= 80 Vdc, I
E
= 0)
(V
CB
= 60 Vdc, I
E
= 0)
Emitter Cutoff Current
(V
EB
= 10 V, I
C
= 0)
ON CHARACTERISTICS
(Note 1)
DC Current Gain
(I
C
= 250 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 100 mAdc, V
CE
= 5.0 Vdc)
Collector −Emitter Saturation Voltage
(I
C
= 250 mAdc, I
B
= 0.25 mAdc)
Base −Emitter Saturation Voltage
(I
C
= 250 mAdc, I
B
= 0.25 mAdc)
DYNAMIC CHARACTERISTICS
Current−Gain Bandwidth Product
(I
C
= 100 mAdc, V
CE
= 5.0 Vdc, f = 100 MHz)
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
Noise Figure
(I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc, R
g
= 100 kW, f = 1.0 kHz)
1. Pulse Test: Pulse Width = 300
ms,
Duty Cycle 2.0%.
f
T
C
ob
NF
100
−
−
200
10
2.0
−
25
−
MHz
pF
dB
h
FE
8.0
10
V
CE(sat)
V
BE(sat)
−
−
−
−
1.0
1.4
−
160
1.1
2.0
Vdc
Vdc
K
BC372
BC373
I
EBO
V
(BR)CES
BC372
BC373
V
(BR)CBO
BC372
BC373
V
(BR)EBO
I
CBO
−
−
−
−
−
−
100
100
100
nAdc
100
80
12
−
−
−
−
−
−
Vdc
nAdc
100
80
−
−
−
−
Vdc
Vdc
Symbol
Min
Typ
Max
Unit
http://onsemi.com
2
BC372, BC373
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AM
A
R
P
L
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
−−−
0.250
−−−
0.080
0.105
−−−
0.100
0.115
−−−
0.135
−−−
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
−−−
6.35
−−−
2.04
2.66
−−−
2.54
2.93
−−−
3.43
−−−
B
STRAIGHT LEAD
BULK PACK
K
X X
G
H
V
1
D
J
C
SECTION X−X
N
N
R
A
B
BENT LEAD
TAPE & REEL
AMMO PACK
P
T
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.40
0.54
2.40
2.80
0.39
0.50
12.70
−−−
2.04
2.66
1.50
4.00
2.93
−−−
3.43
−−−
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
K
X X
G
D
J
V
C
SECTION X−X
N
1
DIM
A
B
C
D
G
J
K
N
P
R
V
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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4
BC372/D
Embedded System
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