BSZ097N10NS5
MOSFET
OptiMOS
TM
5Power-Transistor,100V
Features
•Idealforhighfrequencyswitching
•OptimizedtechnologyforDC/DCconverters
•ExcellentgatechargexR
DS(on)
product(FOM)
•N-channel,Logiclevel
•100%avalanchetested
•Pb-freeplating;RoHScompliant
•QualifiedaccordingtoJEDEC
1)
fortargetapplications
•Halogen-freeaccordingtoIEC61249-2-21
TSDSON-8FL
(enlarged source interconnection)
Table1KeyPerformanceParameters
Parameter
V
DS
R
DS(on),max
I
D
Value
100
9.7
40
Unit
V
mΩ
A
S1
S2
S3
G4
8D
7D
6D
5D
Type/OrderingCode
BSZ097N10NS5
Package
PG-TSDSON-8 FL
Marking
097N10N
RelatedLinks
-
1)
J-STD20 and JESD22
Final Data Sheet
1
Rev.2.3,2017-01-26
OptiMOS
TM
5Power-Transistor,100V
BSZ097N10NS5
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.2.3,2017-01-26
OptiMOS
TM
5Power-Transistor,100V
BSZ097N10NS5
1Maximumratings
atT
A
=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Values
Min.
-
-
-
-
-
-20
-
-
-55
Typ.
-
-
-
-
-
-
-
-
-
Max.
40
39
11
160
97
20
69
2.1
150
Unit
Note/TestCondition
V
GS
=10V,T
C
=25°C
V
GS
=10V,T
C
=100°C
V
GS
=10V,T
A
=25°C,R
thJA
=60K/W
1)
T
C
=25°C
I
D
=20A,R
GS
=25Ω
-
T
C
=25°C
T
A
=25°C,R
thJA
=60K/W
1)
IEC climatic category;
DIN IEC 68-1: 55/150/56
Continuous drain current
Pulsed drain current
2)
Avalanche energy, single pulse
3)
Gate source voltage
Power dissipation
Operating and storage temperature
I
D
I
D,pulse
E
AS
V
GS
P
tot
T
j
,T
stg
A
A
mJ
V
W
°C
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Thermal resistance, junction - case
Device on PCB,
6 cm
2
cooling area
1)
Symbol
R
thJC
R
thJA
Values
Min.
-
-
Typ.
1.1
-
Max.
1.8
60
Unit
K/W
K/W
Note/TestCondition
-
-
1)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2)
See Diagram 3 for more detailed information
3)
See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.2.3,2017-01-26
OptiMOS
TM
5Power-Transistor,100V
BSZ097N10NS5
3Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
1)
Transconductance
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
R
G
g
fs
Values
Min.
100
2.2
-
-
-
-
-
-
23
Typ.
-
3.0
0.1
10
10
10.3
8.3
1.2
46
Max.
-
3.8
1
100
100
13.0
9.7
1.8
-
Unit
V
V
µA
nA
mΩ
Ω
S
Note/TestCondition
V
GS
=0V,I
D
=1mA
V
DS
=V
GS
,I
D
=36µA
V
DS
=100V,V
GS
=0V,T
j
=25°C
V
DS
=100V,V
GS
=0V,T
j
=125°C
V
GS
=20V,V
DS
=0V
V
GS
=6V,I
D
=5A
V
GS
=10V,I
D
=20A
-
|V
DS
|>2|I
D
|R
DS(on)max
,I
D
=20A
Table5Dynamiccharacteristics
Parameter
Input capacitance
1)
Output capacitance
1)
Reverse transfer capacitance
1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Values
Min.
-
-
-
-
-
-
-
Typ.
1600
250
12
11
5
21
5
Max.
2080
325
21
-
-
-
-
Unit
pF
pF
pF
ns
ns
ns
ns
Note/TestCondition
V
GS
=0V,V
DS
=50V,f=1MHz
V
GS
=0V,V
DS
=50V,f=1MHz
V
GS
=0V,V
DS
=50V,f=1MHz
V
DD
=50V,V
GS
=10V,I
D
=20A,
R
G,ext
=3Ω
V
DD
=50V,V
GS
=10V,I
D
=20A,
R
G,ext
=3Ω
V
DD
=50V,V
GS
=10V,I
D
=20A,
R
G,ext
=3Ω
V
DD
=50V,V
GS
=10V,I
D
=20A,
R
G,ext
=3Ω
Table6Gatechargecharacteristics
2)
Parameter
Gate to source charge
Gate charge at threshold
Gate to drain charge
1)
Switching charge
Gate charge total
1)
Gate plateau voltage
Output charge
1)
Symbol
Q
gs
Q
g(th)
Q
gd
Q
sw
Q
g
V
plateau
Q
oss
Values
Min.
-
-
-
-
-
-
-
Typ.
7
4
5
7
22
4.6
30
Max.
-
-
8
-
28
-
40
Unit
nC
nC
nC
nC
nC
V
nC
Note/TestCondition
V
DD
=50V,I
D
=20A,V
GS
=0to10V
V
DD
=50V,I
D
=20A,V
GS
=0to10V
V
DD
=50V,I
D
=20A,V
GS
=0to10V
V
DD
=50V,I
D
=20A,V
GS
=0to10V
V
DD
=50V,I
D
=20A,V
GS
=0to10V
V
DD
=50V,I
D
=20A,V
GS
=0to10V
V
DD
=50V,V
GS
=0V
1)
2)
Defined by design. Not subject to production test
See
″Gate
charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.2.3,2017-01-26
OptiMOS
TM
5Power-Transistor,100V
BSZ097N10NS5
Table7Reversediode
Parameter
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
1)
Reverse recovery charge
1)
Symbol
I
S
I
S,pulse
V
SD
t
rr
Q
rr
Values
Min.
-
-
-
-
-
Typ.
-
-
0.9
43
60
Max.
40
160
1.2
85
120
Unit
A
A
V
ns
nC
Note/TestCondition
T
C
=25°C
T
C
=25°C
V
GS
=0V,I
F
=20A,T
j
=25°C
V
R
=50V,I
F
=20A,di
F
/dt=100A/µs
V
R
=50V,I
F
=20A,di
F
/dt=100A/µs
1)
Defined by design. Not subject to production test
Final Data Sheet
5
Rev.2.3,2017-01-26
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