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BSP33115

Description
Bipolar Transistors - BJT TRANS MED PWR TAPE-7
Categorysemiconductor    Discrete semiconductor   
File Size60KB,7 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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Bipolar Transistors - BJT TRANS MED PWR TAPE-7

BSP33115 Parametric

Parameter NameAttribute value
Product CategoryBipolar Transistors - BJT
ManufacturerNXP
RoHSDetails
Mounting StyleSMD/SMT
Package / CaseSOT-223-4
Transistor PolarityPNP
ConfigurationSingle
Collector- Emitter Voltage VCEO Max80 V
Collector- Base Voltage VCBO90 V
Emitter- Base Voltage VEBO5 V
Maximum DC Collector Current1 A
Gain Bandwidth Product fT100 MHz
Maximum Operating Temperature+ 150 C
Height1.7 mm
Length6.7 mm
Minimum Operating Temperature- 65 C
PackagingReel
Pd - Power Dissipation1300 mW
Factory Pack Quantity1000
Width3.7 mm
Unit Weight0.003951 oz
DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D087
BSP31; BSP32; BSP33
PNP medium power transistors
Product data sheet
Supersedes data of 1997 Apr 08
1999 Apr 26

BSP33115 Related Products

BSP33115 BSP32115
Description Bipolar Transistors - BJT TRANS MED PWR TAPE-7 Bipolar Transistors - BJT TRANS MED PWR TAPE-7
Product Category Bipolar Transistors - BJT Bipolar Transistors - BJT
Manufacturer NXP NXP
RoHS Details Details
Mounting Style SMD/SMT SMD/SMT
Package / Case SOT-223-4 SOT-223-4
Transistor Polarity PNP PNP
Configuration Single Single
Collector- Emitter Voltage VCEO Max 80 V 80 V
Collector- Base Voltage VCBO 90 V 90 V
Emitter- Base Voltage VEBO 5 V 5 V
Maximum DC Collector Current 1 A 1 A
Gain Bandwidth Product fT 100 MHz 100 MHz
Maximum Operating Temperature + 150 C + 150 C
Height 1.7 mm 1.7 mm
Length 6.7 mm 6.7 mm
Minimum Operating Temperature - 65 C - 65 C
Pd - Power Dissipation 1300 mW 1300 mW
Factory Pack Quantity 1000 1000
Width 3.7 mm 3.7 mm
Unit Weight 0.003951 oz 0.003951 oz
Packaging Reel MouseReel
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